TSM4425
30V P-Channel MOSFET
1/6 Version: A09
SOP-8
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switches
● Notebook PCs
● Desktop PCs
Ordering Information
Part No.
Package
Packing
TSM4425CS RL
SOP-8
2.5Kpcs / 13” Reel
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
ID
-11
A
Pulsed Drain Current
IDM
-50
A
Continuous Source Current (Diode Conduction)a,b
IS
-2.1
A
Ta = 25oC
2.5
Maximum Power Dissipation
Ta = 75oC
PD
1.6
W
Operating Junction Temperature
TJ
+150
oC
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
oC
Thermal Performance
Parameter
Symbol
Limit
Unit
Junction to Foot Thermal Resistance
RӨJF
18
oC/W
Junction to Ambient Thermal Resistance (PCB mounted)
RӨJA
52.5
oC/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 10 sec.
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
ID (A)
12 @ VGS = -10V
-11
-30
19 @ VGS = -4.5V
-8.5
Block Diagram
P-Channel MOSFET
Pin Definition:
1. Source
8. Drain
2. Source
7. Drain
3. Source
6. Drain
4. Gate
5. Drain
TSM4425
30V P-Channel MOSFET
2/6 Version: A09
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = -250uA
BVDSS
-30
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = -250µA
VGS(TH)
-1
--
-3
V
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = -30V, VGS = 0V
IDSS
--
--
-1.0
µA
On-State Drain Currenta
VDS = -5V, VGS = -10V
ID(ON)
-50
--
--
A
VGS = -10V, ID = -11A
--
10
12
Drain-Source On-State Resistancea
VGS = -4.5V, ID = -8.5A
RDS(ON)
--
15
19
mΩ
Forward Transconductancea
VDS = -15V, ID = -11A
gfs
--
23
--
S
Diode Forward Voltage
IS = -2.1A, VGS = 0V
VSD
--
--
-1.3
V
Dynamicb
Total Gate Charge
Qg
--
64
--
Gate-Source Charge
Qgs
--
11
--
Gate-Drain Charge
VDS = -15V, ID = -11A,
VGS = -10V
Qgd
--
25
--
nC
Input Capacitance
Ciss
--
3680
--
Output Capacitance
Coss
--
930
--
Reverse Transfer Capacitance
VDS = -8V, VGS = 0V,
f = 1.0MHz
Crss
--
620
--
pF
Switchingc
Turn-On Delay Time
td(on)
--
15
--
Turn-On Rise Time
tr
--
13
--
Turn-Off Delay Time
td(off)
--
100
--
Turn-Off Fall Time
VDD = -15V, RL = 15Ω,
ID = -1A, VGEN = -10V,
RG = 6Ω
tf
--
53
--
nS
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
TSM4425
30V P-Channel MOSFET
3/6 Version: A09
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
TSM4425
30V P-Channel MOSFET
4/6 Version: A09
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
TSM4425
30V P-Channel MOSFET
5/6 Version: A09
SOP-8 Mechanical Drawing
Marking Diagram
Y
= Year Code
M
= Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L
= Lot Code
SOP-8 DIMENSION
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN
MAX.
A
4.80
5.00
0.189
0.196
B
3.80
4.00
0.150
0.157
C
1.35
1.75
0.054
0.068
D
0.35
0.49
0.014
0.019
F
0.40
1.25
0.016
0.049
G
1.27BSC
0.05BSC
K
0.10
0.25
0.004
0.009
M
0º
7º
0º
7º
P
5.80
6.20
0.229
0.244
R
0.25
0.50
0.010
0.019
TSM4425
30V P-Channel MOSFET
6/6 Version: A09
Notice
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