1. Product profile
1.1 General description
High power dens ity, standard switching time PN-rectifier with high-efficiency plan ar
technology, encapsulated in a small and flat lead SOD123W Surface-Mounted
Device (SMD) plastic package.
1.2 Features and benefits
Forward current IF 1 A
Reverse voltage VR 400 V
Standard switchin g time
Low forward voltage
Low reverse curre nt
Low inductance
Small and flat lead SMD plastic
package
Package height typ. 1 mm
High power capability
AEC-Q101 qualified
1.3 Applications
General-purpose rectification
Reverse polarity protection
Standard switching applications
1.4 Quick reference data
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
PNS40010ER
400 V, 1 A high power density, standard switching time
PN-rectifier
Rev. 2 — 21 August 2012 Product data sheet
SOD123W
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
IFforward current Tsp 160°C --1.4A
VRRM repetitive peak reverse
voltage - - 400 V
VRreverse voltage - - 400 V
IFSM non-repetitive peak
forward current Tj(init) =2C; t
p= 8 ms; square wave - - 32 A
VFforward voltage IF=1A; t
p300 µs; δ≤0.02 ;
Tj=2C - 0.93 1.1 V
IF(AV) average fo rw ard
current δ= 0.5 ; f = 20 kHz; Tamb 115 °C;
square wave [1] --1A
δ= 0.5 ; f = 20 kHz; Tsp 170 °C;
square wave --1A
PNS40010ER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 21 August 2012 2 of 14
NXP Semiconductors PNS40010ER
400 V, 1 A high power density, standard switching time PN-rectifier
2. Pinning information
3. Ordering information
4. Marking
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphi c sy mbol
1 K cathode
SOD123W
2 A anode
21
006aab040
2
1
Tabl e 3. Orderi ng information
Type number Package
Name Description Version
PNS40010ER SOD123W plastic surface mounted package; 2 lead s SOD123W
Table 4. Marking codes
Type number Marking code
PNS40010ER EH
PNS40010ER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 21 August 2012 3 of 14
NXP Semiconductors PNS40010ER
400 V, 1 A high power density, standard switching time PN-rectifier
5. Limiting values
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4] Device mounted on a ceramic PCB, AI2O3, standard footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Device mounted on an FR4 PCB, AI2O3, standard footprint.
[4] Soldering point of cathode tab.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VRRM repetitive peak reverse voltage - 400 V
VRreverse voltage - 400 V
VRMS RMS voltage - 280 V
IFforward current Tsp 160 °C - 1.4 A
IF(AV) average fo rw ard current δ= 0.5 ; f = 20 kHz; square wave;
Tamb 115 °C [1] -1A
δ= 0.5 ; f = 20 kHz; Tsp 170 °C;
square wave -1A
IFSM non-repetitive peak forward
current square wave; Tj(init) =2C; t
p=8ms - 32 A
Ptot total power dissipation Tamb 25 °C [2] - 750 mW
[3] - 1300 mW
[4] - 2300 mW
Tjjunction temperature - 175 °C
Tamb ambient temperature -55 175 °C
Tstg storage temperature -65 175 °C
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance
from junction to
ambient
in free air [1] - - 200 K/W
[2] --115K/W
[3] --65K/W
Rth(j-sp) thermal resistance
from junction to solder
point
[4] --15K/W
PNS40010ER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 21 August 2012 4 of 14
NXP Semiconductors PNS40010ER
400 V, 1 A high power density, standard switching time PN-rectifier
FR4 PCB, standard footprint
Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for cathode 1 cm2
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-003979
10
1
102
103
Zth(j-a)
(K/W)
10-1
tp (s)
10-3 102103
10110-2 10-1
duty cycle =
1
0.75 0.5
0.33 0.25
0.2
0.1
0.02
0.01
0
0.05
aaa-003980
10
1
102
103
Zth(j-a)
(K/W)
10-1
tp (s)
10-3 102103
10110-2 10-1
duty cycle =
1
0.75 0.5
0.33 0.25
0.2
0.1
0.02
0.01 0
0.05
PNS40010ER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 21 August 2012 5 of 14
NXP Semiconductors PNS40010ER
400 V, 1 A high power density, standard switching time PN-rectifier
7. Characteristics
Ceramic PCB, Al2O3, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-003981
10
1
102
103
Zth(j-a)
(K/W)
10-1
tp (s)
10-3 102103
10110-2 10-1
duty cycle =
10.75
0.5 0.33
0.25 0.2
0.1
0.02
0.01
0
0.05
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
VFforward voltage IF= 0.5 A; tp300 µs; δ≤0.02 ;
Tj=2C - 0.89 1.05 V
IF= 0.7 A; tp300 µs; δ≤0.02 ;
Tj=2C - 0.91 1.07 V
IF=1A; t
p300 µs; δ≤0.02 ;
Tj=2C - 0.93 1.1 V
IF= 0.5 A; tp300 µs; δ≤0.02 ;
Tj= 125 °C - 0.76 0.92 V
IF= 0.7 A; tp300 µs; δ≤0.02 ;
Tj= 125 °C - 0.78 0.95 V
IF=1A; t
p300 µs; δ≤0.02 ;
Tj= 125 °C - 0.81 0.98 V
IF=1A; t
p300 µs; δ≤0.02 ;
Tj=-4C - 1.01 1.18 V
IF=1A; t
p300 µs; δ≤0.02 ;
Tj= 150 °C - 0.78 0.95 V
IF=1A; t
p300 µs; δ≤0.02 ;
Tj= 175 °C - 0.75 0.92 V
PNS40010ER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 21 August 2012 6 of 14
NXP Semiconductors PNS40010ER
400 V, 1 A high power density, standard switching time PN-rectifier
IRreverse current VR=400V; T
j= -40 °C - 0.1 10 nA
VR=400V; T
j= 25 °C - 0.001 1 µA
VR=400V; T
j= 125 °C - 1 50 µA
VR=400V; T
j= 150 °C - 5 250 µA
VR=400V; T
j= 175 °C - 10 500 µA
Cddiode capacitance VR= 4 V; f = 1 MHz; Tamb =2C - 8 20 pF
trr reverse recovery time IF= 0.5 A; IR=1A; I
R(meas) =0.25A;
Tamb =2C -0.81.8µs
Table 7. Characteristics …continued
Symbol Parameter Conditions Min Typ Max Unit
(1) Tj = 175 °C
(2) Tj = 150 °C
(3) Tj = 125°C
(4) Tj = 85 °C
(5) Tj = 25 °C
(6) Tj = 40 °C
(1) Tj = 175 °C
(2) Tj = 150 °C
(3) Tj = 125 °C
(4) Tj = 85 °C
(5) Tj = 25 °C
(6) Tj = 40 °C
Fig 4. Forward current as a function of forward
voltage; typical values Fig 5. Reverse current as a function of reverse
voltage; typical values
aaa-003982
VF (V)
0.0 1.51.00.5
10-2
10-3
1
10-1
10
IF
(A)
10-4
(1)
(2)
(3)
(4) (5) (6)
aaa-003983
10-4
10-5
10-6
10-7
10-8
10-9
10-10
10-11
IR
(A)
10-12
VR (V)
0 400300100 200
(1)
(2)
(3)
(4)
(5)
(6)
PNS40010ER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 21 August 2012 7 of 14
NXP Semiconductors PNS40010ER
400 V, 1 A high power density, standard switching time PN-rectifier
f = 1 MHz; Tamb = 25 °C Tamb = 25 °C
Fig 6. Diod e capacitance as a function of reverse
voltage; typical values Fig 7. Non-repetitive peak forward current as a
function of puls e du ra tion; typical values
Tj = 175 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Tj = 175 °C
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
Fig 8. Average forward power dissipation as a
function of average forwa rd current; typical
values
Fig 9. Average reverse power di ssipation as a
function of reverse volta ge; typ ical values
VR (V)
0 400300100 200
aaa-003984
10
5
15
20
Cd
(pF)
0
tp (μs)
102104
103
aaa-003985
102
103
IFSM
(A)
10
IF(AV) (A)
0.0 1.51.00.5
aaa-003986
0.4
0.8
1.2
PF(AV)
(W)
0.0
(1)
(2)
(3)
(4)
VR (V)
0 400300100 200
aaa-003987
1.5
3.0
4.5
PR(AV)
(mW)
0.0
(1)
(2)
(3)
(4)
PNS40010ER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 21 August 2012 8 of 14
NXP Semiconductors PNS40010ER
400 V, 1 A high power density, standard switching time PN-rectifier
FR4 PCB, standard footprint
Tj = 175 °C
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
FR4 PCB, mounting pad for cathode 1 cm2
Tj = 175 °C
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 10. Average forward current as a function of
ambient temperature; typical values Fig 11. Average forward current as a function of
ambient temperature; typical values
Ceramic PCB, Al2O3, standard footprint
Tj = 175 °C
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Tj = 175 °C
(1) δ = 1 (DC)
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 12. Average forward current as a function of
ambient temperature; typical values Fig 13. Average forward current as a function of solder
point temperature; typica l values
Tamb (°C)
0 20015050 100
aaa-003988
0.5
1.0
1.5
IF(AV)
(A)
0.0
(1)
(2)
(3)
(4)
Tamb (°C)
0 20015050 100
aaa-003989
0.5
1.0
1.5
IF(AV)
(A)
0.0
(1)
(2)
(3)
(4)
Tamb (°C)
0 20015050 100
aaa-003990
0.5
1.0
1.5
IF(AV)
(A)
0.0
(1)
(2)
(3)
(4)
Tsp (°C)
0 20015050 100
aaa-003991
0.5
1.0
1.5
IF(AV)
(A)
0.0
(1)
(2)
(3)
(4)
PNS40010ER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 21 August 2012 9 of 14
NXP Semiconductors PNS40010ER
400 V, 1 A high power density, standard switching time PN-rectifier
8. Test information
The current ratings for the typical waveforms are calculated according to the equations:
IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with
IRMS defined as RMS current.
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stre ss te st qu alif ication for discrete semiconductors, and is
suitable for use in automotive applications.
Fig 14. Reverse recovery time: test circuit and waveforms
Fig 15. Duty cycle definition
trr
(1)
+ IFt
output signal
trtpt
10 %
90 %
VR
input signal
V = VR + IF × RS
RS = 50
Ω
IF
D.U.T.
Ri = 50
Ω
SAMPLING
OSCILLOSCOPE
mga881
tp
tcy
P
t
006aac658
duty cycle δ =
tp
tcy
PNS40010ER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 21 August 2012 10 of 14
NXP Semiconductors PNS40010ER
400 V, 1 A high power density, standard switching time PN-rectifier
9. Package outline
10. Soldering
Fig 16. Package outline SOD123W
08-11-06Dimensions in mm
2.8
2.4
3.7
3.3
1.05
0.75
1.9
1.5
1
2
0.6
0.3
0.22
0.10
1.1
0.9
Fig 17. Reflow soldering footprint for SOD123W
PNS40010ER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 21 August 2012 11 of 14
NXP Semiconductors PNS40010ER
400 V, 1 A high power density, standard switching time PN-rectifier
11. Revision history
Table 8. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PNS40010ER v.2 20120821 Product data sheet - PNS40010ER v.1
Modifications: Data sheet status updated
PNS40010ER v.1 20120615 Preliminary data sheet - -
PNS40010ER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 21 August 2012 12 of 14
NXP Semiconductors PNS40010ER
400 V, 1 A high power density, standard switching time PN-rectifier
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The p r oduct status of device(s) described in this document may have changed sinc e this documen t was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URLhttp://www.nxp.com.
12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modificati ons or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of informati on included herein and shall have
no liability for the consequences of use of such info rmation.
Draft — The document is a draft version onl y. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sh eet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre vail.
Product specificat io nThe information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this d ocument is be lieved to
be accurate and reliable. However, NXP Semiconductors doe s not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Se miconductors takes no
responsibility for the content in this document if provided by an inf ormation
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequ ential damages (including - wit hout limitatio n - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semico nductors’ aggregate and cumulat ive liability t owards
customer for the products described herein shall be limited in accordance
with theTerms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersed es an d r eplaces all inf ormation supplied pri or
to the publication hereof.
Suitability for use in automotive applications This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless ot herwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconducto rs products in such equipment or
applications an d ther efo re su ch inclusi on a nd/or use is at the cu stome r's own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty tha t such application s will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does no t accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for th e customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Document status[1] [2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [shor t] data sheet Qualification This document contains data from the preliminary spec ification.
Product [short] data sheet Production This document contains the product specification.
PNS40010ER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 21 August 2012 13 of 14
NXP Semiconductors PNS40010ER
400 V, 1 A high power density, standard switching time PN-rectifier
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published athttp://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document ma y be interpret ed or
construed as an of fer to sell product s that is op en for accept ance or the grant ,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) d escribed herein may
be subject to export control regulat i ons. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
Adelante,Bitport,Bitsound,CoolFlux,CoReUse,DESFire,EZ-HV,FabKey,G
reenChip,HiPerSmart,HITAG,I²C-bus
logo,ICODE,I-CODE,ITEC,Labelution,MIFARE,MIFARE Plus,MIFARE
Ultralight,MoReUse,QLPAK,Silicon
Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia
andUCODE — are trademarks of NXP B.V.
HD Radio andHD Radio logo — are trademarks of iBiquity Digital
Corporation.
13. Contact information
For more information, please visit:http://www.nxp.com
For sales office addresses, please send an email to:salesaddresses@nxp.com
NXP Semiconductors PNS40010ER
400 V, 1 A high power density, standard switching time PN-rectifier
© NXP B.V. 2012. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 21 August 2012
Document identifier: PNS40010ER
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . .3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . .9
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . .9
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
13 Contact information. . . . . . . . . . . . . . . . . . . . . .13