ISSUED DATE :2005/09/28 REVISED DATE : G M AC 9 7 A6 S E N S I T I V E G AT E T R I A C S S I L I C O N B I D I R E C T I O N A L T H Y R I S T O R S 0 . 8 A , 4 0 0 V Description The GMAC97A6 device is designed for use in solid relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO-92 package which is readily adaptable for use in automatic insertion equipment. Features Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all possible Combinations of Trigger Sources, and especially for Circuits that Source Gate Drives All Diffused and Glassivated Junction for Maximum Uniformity of parameters and Reliability Package Dimensions D TO-92 E A S1 b1 REF. L S E A T IN G PLANE e1 e b A S1 b b1 C C Absolute Maximum Ratings (TJ=25 Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off-State Voltage(Note1) Sine Wave, 50 to 60Hz, Gate Open (TJ=-40 to 110 ) VDRM VRRM 400 V On-state RMS Current, Full Cycle Sine Wave 50 to 60Hz (TC=50 ) Peak Non-Repetitive Surge Current One Full Cycle, Sine Wave, 60Hz (TC=110 ) Circuit Fusing Consideration (t=8.3ms) IT(RMS) 0.6 A ITSM 8 A 2 0.26 A2S Peak Gate Power (t 2.0 s, TC=80 ) Average Gate Power (t 8.3ms, TC=80 ) I t PGM 5.0 W PG(AV) 0.1 W Peak Gate Current (t 2.0 s, TC=80 ) IGM 1.0 A Peak Gate Voltage (t 2.0 s, TC=80 ) VGM 5.0 V TJ -40 ~ +110 Operating Junction Temperature Rang Storage Temperature Rage Tstg -40 ~ +150 Note 1.VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Characteristic Thermal Resistance, Junction-to-case Thermal Resistance, Junction-to-Ambient Maximum Lead Temperature for soldering Purposes for 10 Seconds GMAC97A6 Symbol R JC R JA TL Max 75 200 260 Unit /W /W Page: 1/4 ISSUED DATE :2005/09/28 REVISED DATE : Electrical Characteristics (TC = 25 unless otherwise noted; Electricals apply in both directions) Characteristic Off Characteristics Peak Repetitive Blocking Current (Note2) TJ=25 TJ=110 (VDRM=400V and VRRM=400V; Gate Open) On Characteristics Peak On-State Voltage 2.0 s) (ITM=0.85A Peak; Pulse Width 2.0ms, Duty Cycle Gate Trigger Current (Continuous dc) (VD=12.0 Vdc, RL=100 ) MT2(+), G(+) MT2(+), G( - ) MT2( - ), G( - ) MT2( - ), G(+) Gate Trigger Voltage (Continuous dc) (VD=12.0 Vdc, RL=100 ) MT2(+), G(+) All Types MT2(+), G( - ) All Types MT2( - ), G( - ) All Types MT2( - ), G(+) All Types 2.0%) Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Min Typ Max IDRM,IRRM - - 10 100 A VTM - - 1.9 V - - 5.0 5.0 5.0 7.0 - 0.66 0.77 0.84 0.88 2.0 2.0 2.0 2.5 VGD 0.1 - - V IH - 1.5 10 mA tgt - 2.0 - s dV/dt (c) - 5.0 - V/ s dv/dt - 25 - V/ s IGT VGT Gate Non-Trigger Voltage (VD=12.0 V, RL=100 TJ=110 ) All Four Quadrants Holding Current (VD=12.0 Vdc, Initiating Current=200mA, Gate Open) Turn-On Time (VD= VDRM=400V, ITM=1.0A pk, IG=25mA) Dynamic Characteristics Critical Rate of Rise of Commutation Voltage (VD=VDRM=400V, ITM=0.84A, Commutation di/dt=0.3A/ms, Gate Unenergized, TC=50 ) Critical Rate of Rise of Off-State Voltage (VD=VDRM=400V, TC=110 , Gate Open, Exponential Waveform) Voltage Current Characteristic of Triacs (Bidirectional Device) Symbol Unit mA V Quadrant Definitions for a Triac Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current All polarities are referenced to MT1. With in-phase signals (using standard AC lines) quadrants are used GMAC97A6 and Page: 2/4 ISSUED DATE :2005/09/28 REVISED DATE : Characteristics Curve Fig 1. RMS Current Derating Fig 2. RMS Current Derating Fig 3. Power Dissipation Fig 4. Transient Thermal Response GMAC97A6 Fig 5. On-State Characteristics Page: 3/4 ISSUED DATE :2005/09/28 REVISED DATE : Fig 6. Typical Gate Trigger Voltage v.s. Junction Temperature Fig 8. Typical Latching Current v.s. Junction Temperature Fig 10. Maximum Allowable Surge Current Fig 7. Typical Gate Trigger Current v.s. Junction Temperature Fig 9. Typical Holding Current v.s. Junction Temperature Fig 11. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage (dV/dt)C Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GMAC97A6 Page: 4/4