Quality Search by part # or keyword Careers Investors Sales Contacts Contact Us Parametric Search MyMicrosemi Login Products Applications Home Design Support Ordering Company 2N2102 (#22980) 2N2102 (#22980) Products Product Directory Applications Directory Parametric Search Related Links Overview Technical support Diagrams Sales Contacts Available Stock Sales Contacts Electrical Rating Symbol Collector to Emitter Saturation Voltage VCE(sat) DC Current Gain HFE Min Typ 40.00 Maximum Electrical Rating Symbol Breakdown Voltage, Collector-Base (Emitter Open) Collector Current (dc) Max Unit 0.50 V RFQ/Samples 120.00 Min Typ Max Unit VBR(CBO) 120.00 V IC 1.00 A Collector-Emitter Voltage (Base Open) VCEO 65.00 V Emitter-Base Voltage (Collector Open) VEBO 7.00 V Power Dissipation, Total PT 5.00 W This part can be found in the following product categories: Discretes Transistors BJT( BiPolar Junction Transistor) PNP Transistor Non-Radiation Hardened Devices Transistors BJT( BiPolar Junction Transistor) Products Applications Design Support Company Careers Investors Survey Privacy Policy NPN Transistor Terms & Conditions Product Disclaimer Copyright (c) 2015 Microsemi Corporation. All rights reserved. The Microsemi logo is a registered trademark of Microsemi Corporation.