2N3867 w w w. c e n t r a l s e m i . c o m SILICON PNP TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3867 is a silicon PNP power transistor designed for high speed switching and amplifier applications. MARKING: FULL PART NUMBER TO-5 CASE MAXIMUM RATINGS: (TC=25C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Peak Collector Current ICM Continuous Base Current IB Power Dissipation PD Power Dissipation (TA=25C) PD Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance JC Thermal Resistance JA ELECTRICAL SYMBOL ICBO ICEX BVCEO BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE fT Cob Cib td tr ts tf CHARACTERISTICS: (TC=25C unless otherwise noted) TEST CONDITIONS MIN VCB=40V, TC=150C VCE=40V, VBE=2.0V IC=20mA 40 IE=100A 4.0 IC=500mA, IB=50mA IC=1.5A, IB=150mA IC=2.5A, IB=250mA IC=500mA, IB=50mA IC=1.5A, IB=150mA 0.9 IC=2.5A, IB=250mA VCE=1.0V, IC=500mA 50 VCE=2.0V, IC=1.5A 40 VCE=3.0V, IC=2.5A 25 VCE=5.0V, IC=3.0A 20 VCE=5.0V, IC=100mA, f=20MHz 60 VCB=10V, IE=0, f=100kHz VEB=3.0V, IC=0, f=100kHz VCC=30V, VBE(off)=0 IC=1.5A, IB1=150mA VCC=30V, IC=1.5A IB1=IB2=150mA 40 40 4.0 3.0 10 0.5 6.0 1.0 -65 to +200 29 175 MAX 150 1.0 0.5 0.75 1.3 1.0 1.4 2.0 UNITS V V V A A A W W C C/W C/W UNITS A A V V V V V V V V 200 120 1000 35 65 325 75 MHz pF pF ns ns ns ns R0 (8-May 2013) 2N3867 SILICON PNP TRANSISTOR TO-5 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R0 (8-May 2013) w w w. c e n t r a l s e m i . c o m