BFN38
Mar-04-20051
NPN Silicon High-Voltage Transistors
• Suitable for video output stages in TV sets and
switching power supplies
• High breakdown voltage
• Low collector-emitter saturation voltage
• Complementary type: BFN39 (PNP)
VPS05163
1
2
3
4
Type Marking Pin Configuration Package
BFN38 BFN 38 1 = B 2 = C 3 = E 4 = C SOT223
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 300 V
Collector-base voltage VCBO 300
Emitter-base voltage VEBO 5
DC collector current IC200 mA
Peak collector current ICM 500
Base current IB100
Peak base current IBM 200
Total power dissipation, TS = 124 °C Ptot 1.5 W
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS ≤17 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
BFN38
Mar-04-20052
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 300 - - V
Collector-base breakdown voltage
IC = 100 µA, IE = 0
V(BR)CBO 300 - -
Emitter-base breakdown voltage
IE = 100 µA, IC = 0
V(BR)EBO 5 - -
Collector cutoff current
VCB = 250 V, IE = 0
ICBO - - 100 nA
Collector cutoff current
VCB = 250 V, IE = 0 , TA = 150 °C
ICBO - - 20 µA
Emitter cutoff current
VEB = 4 V, IC = 0
IEBO - - 100 nA
DC current gain 1)
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 30 mA, VCE = 10 V
hFE
25
40
30
-
-
-
-
-
-
-
Collector-emitter saturation voltage1)
IC = 20 mA, IB = 2 mA
VCEsat - - 0.5 V
Base-emitter saturation voltage 1)
IC = 20 mA, IB = 2 mA
VBEsat - - 0.9
1) Pulse test: t < 300µs; D < 2%
BFN38
Mar-04-20053
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 10 V, f = 20 MHz
fT- 70 - MHz
Collector-base capacitance
VCB = 30 V, f = 1 MHz
Ccb - 1.5 - pF
BFN38
Mar-04-20054
Collector current IC = f (VBE)
VCE = 10V
EHP00636BFN 36/38
10
0V
BE
1.5
C
10
3
1
10-1
5
0.5 1.0
100
5
Ι
V
mA
5
102
Total power dissipation Ptot = f(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
0.2
0.4
0.6
0.8
1
1.2
1.4
W
1.8
Ptot
Collector cutoff current ICBO = f (TA)
VCB = 30V
EHP00638BFN 36/38
10
0˚C
A
150
CB0
10
4
1
10
-1
5
50 100
5
10
2
10
0
5
Ι
T
nA
max
typ
5
10
3
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10
EHP00245BFN 36/38
-6
0
10
5
D
=
5
101
5
102
3
10
10-5 10-4 10-3 10-2 100
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
totmax
tot
PDC
P
p
t
tp
=
DT
tp
T
BFN38
Mar-04-20055
DC current gain hFE = f (IC)
VCE = 10V
EHP00639BFN 36/38
10
10 mA
h
C
10
5
FE
10
3
1
100
5
10 10 10
-1 0 1 2 3
Ι
5
102
555
Transition frequency fT = f (IC)
VCE = 10V, f = 100MHz
EHP00637BFN 36/38
10
MHz
10 10 mA
f
C
1010
T
555
Ι
0123
10
3
2
101
5
Package SOT223
Package Outline
Foot Print
Marking Layout
Packing
Code E6327: Reel ø180 mm = 1.000 Pieces/Reel
Code E6433: Reel ø330 mm = 4.000 Pieces/Reel
0.25
±0.1
0.7
4.6
M
A
1 2
2.3
3
A3
4
±0.1
6.5
±0.2
DIN 6784
+0.2
acc. to
±0.04
0.25
0.5 MIN.
M
B
0.28
0.1 MAX.
15
˚
7
±0.3
1.6
±0.1
3.5
±0.2
B
MAX.
1.2 1.1
1.4 1.44.8
3.5
Manufacturer
Date code
(Year/Calendarweek)
Type code
Example
2003, July
BCP52-16
Pin 1
80.3 MAX.
6.8
7.55
12
1.75
Pin 1
Impressum
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2005.
All Rights Reserved.
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The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
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