IRF332 - Intersil Corporation

File Number

1570.4

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

IRF330

5.5A, 400V, 1.000 Ohm, N-Channel

Power MOSFET

This N-Channel enhancement mode silicon gate power ﬁeld

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a speciﬁed level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

Formerly developmental type TA17414.

Features

• 5.5A, 400V

•r

DS(ON) = 1.000Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

JEDEC TO-204AA

Ordering Information

PART NUMBER PACKAGE BRAND

IRF330 TO-204AA IRF330

NO TE: When ordering, use the entire part number . G

DRAIN

(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

Data Sheet March 1999

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

IRF330 UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 400 V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 400 V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

TC= 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID5.5

3.5 A

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 22 A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD75 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS 300 mJ

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

STG -55 to 150 oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ= 25oC to 125oC.

Electrical Speciﬁcations TC = 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 10) 400 - - V

Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V

Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA

VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ= 125oC - - 250 µA

On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V 5.5 - - A

Gate to Source Leakage Current IGSS VGS = ±20V ±100 nA

Drain to Source On Resistance (Note 2) rDS(ON) ID = 3.0A, VGS = 10V (Figures 8, 9) - 0.8 1.0 Ω

Forward Transconductance (Note 2) gfs VDS ≥ 10V, ID = 3.3A (Figure 12) 2.9 4.0 - S

Turn-On Delay Time td(ON) VDD = 200V, ID≈ 5.5A, RG = 12Ω, RL = 36Ω,

VGS = 10V (Figures 17, 18) MOSFET Switching

Times are Essentially Independent of Operating

Temperature

-1117ns

Rise Time tr-2029ns

Turn-Off Delay Time td(OFF) -3556ns

Fall Time tf-1524ns

Total Gate Charge

(Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 5.5A, VDS = 0.8 x Rated BVDSS,

IG(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge is

Essentially Independent of Operating Temperature

-2135nC

Gate to Source Charge Qgs -4-nC

Gate to Drain “Miller” Charge Qgd -17-nC

Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) - 700 - pF

Output Capacitance COSS - 150 - pF

Reverse Transfer Capacitance CRSS -40-pF

Internal Drain Inductance LDMeasured between the

Contact Screw on the

Flange that is Closer to

Source and Gate Pins and

the Center of Die

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

- 5.0 - nH

Internal Source Inductance LSMeasured from the Source

Lead, 6mm (0.25in) from

the Flange and the Source

Bonding Pad

- 12.5 - nH

Thermal Resistance Junction to Case RθJC - - 1.67 oC/W

Thermal Resistance Junction to Ambient RθJA Free Air Operation - - 30 oC/W

IRF330

Source to Drain Diode Speciﬁcations

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current ISD Modified MOSFET Symbol

Showing the Integral

Reverse P-N Junction Diode

- - 5.5 A

Pulse Source to Drain Current (Note 3) ISDM - - 22 A

Source to Drain Diode Voltage (Note 2) VSD TJ = 25oC, ISD = 5.5A, VGS = 0V (Figure 13) - - 1.6 V

Reverse Recovery Time trr TJ = 25oC, ISD = 5.5A, dISD/dt = 100A/µs 140 400 660 ns

Reverse Recovery Charge QRR TJ = 25oC, ISD = 5.5A, dISD/dt = 100A/µs 0.93 2.4 4.3 µC

NOTES:

2. Pulse test: pulse width ≤300µs, duty cycle ≤2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 50V, starting TJ= 25oC, L = 17.75mH, RG= 25Ω,peak IAS = 6.5A. See Figures 15, 16.

Typical Performance Curves

Unless Otherwise Speciﬁed

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

0 50 100 150

TC, CASE TEMPERATURE (oC)

POWER DISSIPATION MULTIPLIER

0.2

0.4

0.6

0.8

1.0

1.2

0050 100

ID, DRAIN CURRENT (A)

TC, CASE TEMPERATURE (oC)

150

75 125

ZθJC, NORMALIZED TRANSIENT

0.5

0.05

10-2

10-5 10-4 10-3 1.0 10

t1, RECTANGULAR WAVE PULSE DURATION (s)

10-1

PDM

t1t2

SINGLE PULSE DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZθJC x RθJC + TC

NOTES:

1.0

0.2

0.1

0.02

0.01

THERMAL IMPEDANCE

0.01

0.05

0.5

0.2

0.1

0.02

IRF330

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

NOTE: Heating effect of 2µs pulse is minimal.

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

Typical Performance Curves

Unless Otherwise Speciﬁed (Continued)

100

500

110

100

OPERATION IN THIS

AREA IS LIMITED

BY rDS(ON)

0.1

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

TC = 25oC

10µs

100µs

1ms

TJ = MAX RATED

SINGLE PULSE

10ms

100ms

VDS, DRAIN TO SOURCE VOLTAGE (V)

100 150 200 2500 300

ID, DRAIN CURRENT (A)

4.5V

10V 80µs PULSE TEST

VGS = 5.5V

ID, DRAIN CURRENT (A)

02468

VDS, DRAIN TO SOURCE VOLTAGE (V)

80µs PULSE TEST

VGS = 4.5V

VGS = 5V

VGS = 4V

VGS = 6V

VGS = -10V

0234 71

ID, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

80ms PULSE TEST

VDS ≥ 50V

125oC

-55oC

25oC

ID, DRAIN CURRENT (A)

5101520025

rDS(ON), DRAIN TO SOURCE

VGS = 20V

VGS = 10V

ON RESISTANCE (Ω)

2.2

1.4

0.6

TJ, JUNCTION TEMPERATURE (oC)

NORMALIZED DRAIN TO SOURCE

ID = 2.0A

1.8

1.0

0.2 -40 40 80 120

VGS = 10V

ON RESISTANCE

IRF330

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

Typical Performance Curves

Unless Otherwise Speciﬁed (Continued)

1.25

1.05

0.85

0 160

TJ, JUNCTION TEMPERATURE (oC)

NORMALIZED DRAIN TO SOURCE

ID = 250µA

1.15

0.95

0.75

-40 40 80 120

BREAKDOWN VOLTAGE

VDS, DRAIN TO SOURCE VOLTAGE (V)

C, CAPACITANCE (pF)

2000

1600

1200

800

400

CISS

COSS

CRSS

010 20 30 40 50

VGS = 0V

f = 1MHz CISS = CGS + CGD

CRSS = CGD

COSS ≈ CDS + CGD

VGS = 0V, f = 1MHz

ID, DRAIN CURRENT (A)

2468

010

gfs, TRANSCONDUCTANCE (S)

80µs PULSE TEST

TJ = 125oC

TJ = 25oC

TJ = -55oC

ISD, SOURCE TO DRAIN CURRENT (A)

VSD, SOURCE TO DRAIN VOLTAGE (V)

100

0.101234

TJ = 25oC

TJ = 150oC

TJ = 25oC

80µs PULSE TEST

TJ = 150oC

Qg(TOT), TOTAL GATE CHARGE (nC)

8162432040

VGS, GATE TO SOURCE VOLTAGE (V)

VDS = 320V

VDS = 200V

VDS = 80V

ID = 5.5A

IRF330

Test Circuits and Waveforms

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

FIGURE 19. GATE CHARGE TEST CIRCUITS FIGURE 20. GATE CHARGE WAVEFORMS

VGS

0.01Ω

IAS

VDS

VDD

DUT

VARY tP TO OBTAIN

REQUIRED PEAK IAS

VDD

VDS

BVDSS

IAS

tAV

VGS

DUT

-VDD

tON

td(ON)

90%

10%

VDS 90%

10%

td(OFF)

tOFF

90%

50%

10% PULSE WIDTH

VGS

0.3µF

12V

BATTERY 50kΩ

VDS

DUT

IG(REF)

(ISOLATED

VDS

0.2µF

CURRENT

REGULATOR

ID CURRENT

SAMPLING

IG CURRENT

SAMPLING

SUPPLY)

RESISTOR RESISTOR

SAME TYPE

AS DUT Qg(TOT)

Qgd

Qgs

VDS

VGS

VDD

IG(REF)

IRF330

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certiﬁcation.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-

out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

from its use. No license is gr anted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

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IRF330