2MBI200S-120-50 - FUJI ELECTRIC

2MBI 200S-120 2-Pack IGBT

1200V

2x200A

IGBT MODULE ( S-Series )

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■ Features

• NPT-Technology

• Square SC SOA at 10 x IC

• High Short Circuit Withstand-Capability

• Small Temperature Dependence of the Turn-Off

Switching Loss

• Low Losses And Soft Switching

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■ Applications

• High Power Switching

• A.C. Motor Controls

• D.C. Motor Controls

• Uninterruptible Power Supply

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■ Outline Drawing

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■ Maximum Ratings and Characteristics ■

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■ Equivalent Circuit

•Absolute Maximum Ratings ( Tc=25°C)

Items Symbols Ratings Units

Collector-Emitter Voltage VCES 1200

Gate -Emitter Voltage VGES ± 20 V

Continuous 25°C / 80°C IC300 / 200

Collector 1ms 25°C / 80°C IC PULSE 600 / 400

Current Continuous -IC200

1ms -IC PULSE 400

Max. Power Dissipation PC1500 W

Operating Temperature Tj+150

Storage Temperature Tstg -40 ∼ +125 °C

Isolation Voltage

*1A.C. 1min. Vis 2500 V

Mounting *23.5

Screw Torque Terminals *24.5 Nm

Note: 1*: All Terminals should be connected together when isolation test will be done.

2*: Recommendable Value; Mounting 2.5 ∼ 3.5 Nm (M5 or M6), Terminal 3.5~4.5 (M6)

•Electrical Characteristics ( at Tj=25°C )

Items Symbols Test Conditions Min. Typ. Max. Units

Zero Gate Voltage Collector Current ICES VGE=0V VCE=1200V 1.0 mA

Gate-Emitter Leackage Current IGES VCE=0V VGE=± 20V 400 nA

Gate-Emitter Threshold Voltage VGE(th) VGE=20V IC=200mA 5.5 7.2 8.5

Tj = 25°C 2.3 2.6 V

Collector-Emitter Saturation Voltage VCE(sat) VGE=15V IC=200A Tj =125°C 2.8

Input Capacitance Cies VGE=0V 24’000

Output Capacitance Coes VCE=10V 5’000 pF

Reverse Transfer Capacitance Cres f=1MHz 4’400

tON VCC = 600V 0.35 1.2

Turn-on Time tr,x IC= 200A 0.25 0.6

tr,i VGE =±15V 0.10

tOFF RG=4.7Ω0.45 1.0

Turn-off Time tfInductive Load 0.08 0.3

µs

Tj = 25°C 2.3 3.0

Diode Forward On-Voltage VFIF=200A; VGE=0V Tj =125°C 2.0 V

Reverse Recovery Time trr IF=200A 350 ns

•Thermal Characteristics

Items Symbols Test Conditions Min. Typ. Max. Units

Rth(j-c) IGBT 0.085

Thermal Resistance Rth(j-c) Diode 0.180 °C/W

Rth(c-f) With Thermal Compound 0.025

MS5F 4898 rev. B 2001-02-21