DSA50C100QB
Low Loss and Soft Recovery
High Performance Schottky Diode
Common Cathode
Schottky Diode Gen ²
1 2 3
Part number
DSA50C100QB
Backside: cathode
FAV
F
VV0.72
RRM
25
100
=
V= V
I= A
2x
Features / Ad vantages: Applications: Package:
● Very low Vf
● Extremely low switching losses
● Low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
TO-3P
● Industry standard outline
compatible with TO-247
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions. 20131031aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA50C100QB
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
0.90
R0.95 K/
W
R
min.
25
V
RSM
V
450T = 25°C
VJ
T = °C
VJ
m
A
5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
155
P
tot
160
W
T = 25°C
C
RK/
W
25
100
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
t
1.07
T = 25°C
VJ
125
V
F0
V
0.45T = °C
VJ
175
r
F
7.3 m
Ω
V
0.72T = °C
VJ
I = A
F
V
25
0.90
I = A
F
50
I = A
F
50
threshold voltage
slope resistance for power loss calculation only
µ
A
125
V
RRM
V
100
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
289
j
unction capacitance V = V12 T = 25°Cf = 1 MHz
RVJ
p
F
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
175
440
A
100
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Schottky
100
0.25
IXYS reserves the right to change limits, conditions and dimensions. 20131031aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA50C100QB
Ratings
Product Mar
k
i
n
g
Date Code
Part No.
Logo
IXYS
abcd
Assembly Code
Zyyww
Assembly Line
D
S
A
50
C
100
QB
Part number
Diode
Schottky Diode
low VF
Common Cathode
TO-3P (3)
=
=
=
DSA60C100PB TO-220AB (3) 100
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm1.2
mounting torque 0.8
T
VJ
°C175
virt ua l j un ctio n temp eratu re -55
Weight g5
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
F
C
N120
mount ing for ce w i th cli p 20
I
RMS
RMS current 50 A
per terminal
150-55
TO-3P
Similar Part Package Voltage class
DSA50C100HB TO-247AD (3) 100
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
1
)
DSA50C100QB 504033Tube 30DSA50C100QBStandard
T
stg
°C150
storage temperature -55
threshold voltage V0.45
mΩ
V
0 max
R
0 max
slope resistance * 4.7
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Schottky
175 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20131031aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA50C100QB
1 2 3
Outlines TO-3P
IXYS reserves the right to change limits, conditions and dimensions. 20131031aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSA50C100QB
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0
10
20
30
40
50
60
70
0 20406080100
0.0001
0.001
0.01
0.1
1
10
10 30 50 700204060
0
10
20
30
40
50
60
70
0.0001 0.001 0.01 0.1 1 10
0.0
0.2
0.4
0.6
0.8
1.0
0 50 100 150 200
0
10
20
30
40
50
60
70
80
0 20406080100
0
200
400
600
800
1000
DC
25°C
50°C
75°C
100°C
125°C
Single Pulse
T
VJ
=175°C
150°C
I
F
[A]
V
F
[V]
I
R
[mA]
V
R
[V] V
R
[V]
C
T
[pF]
T
C
[°C] I
F(AV)
[A]
P
(AV)
[W]
t[s]
Note: All curves are per diode
Fig. 1 Maximum forward voltage
drop characteristics
Fig. 2 Typ. reverse current
I
R
vs. reverse voltage V
R
Fig. 3 Typ. junction capacitance
C
T
vs. reverse voltage V
R
Fig. 4 Average forward current
I
F(AV)
vs. case temperature T
C
Fig. 5 Forward power loss
characteristics
Fig. 6 Transient thermal impedance junction to case
I
F(AV)
[A]
T
VJ
=
150°C
125°C
25°C
d= 0.5
d =
DC
0.5
0.33
0.25
0.17
0.08
Z
thJC
[K/W]
T
VJ
=25°C
R
thi
[K/W]
0.026
0.172
0.227
0.435
0.09
t
i
[s]
0.0005
0.011
0.072
0.34
1.5
Schottky
IXYS reserves the right to change limits, conditions and dimensions. 20131031aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
