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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDPC5030SG PowerTrench(R) Power Clip 30V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17 A dual package. The switch node has been internally connected to Max rDS(on) = 6.5 m at VGS = 4.5 V, ID = 14 A enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous Q2: N-Channel SyncFETTM (Q2) have been designed to provide optimal power Max rDS(on) = 2.4 m at VGS = 10 V, ID = 25 A efficiency. Max rDS(on) = 3.0 m at VGS = 4.5 V, ID = 22 A Applications Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses Computing Communications MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing General Purpose Point of Load RoHS Compliant PIN1 PAD10 V+(HSD) PIN1 HSG GR PAD9 GND(LSS) V+ V+ Top LSG LSG HSG SW GR SW V+ SW SW V+ SW SW SW Bottom Power Clip 5X6 Pin Name Description Pin Name 1 HSG High Side Gate 3,4,10 V+(HSD) High Side Drain Description Pin 2 GR Gate Return 5,6,7 SW Switching Node, Low Side Drain 9 8 Name LSG Description Low Side Gate GND(LSS) Low Side Source MOSFET Maximum Ratings TA = 25 C unless otherwise noted. Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous TC = 25 C (Note 5) -Continuous TC = 100 C (Note 5) -Continuous TA = 25 C 20 12 V 56 84 53 25Note1b TA = 25 C (Note 4) 227 503 (Note 3) 54 96 Power Dissipation for Single Operation TC = 25 C 23 25 Power Dissipation for Single Operation TA = 25 C 2.1Note1a 2.3Note1b 1.0Note1c 1.1Note1d Single Pulse Avalanche Energy Power Dissipation for Single Operation TJ, TSTG Units V 35 -Pulsed PD Q2 30 17Note1a ID EAS Q1 30 TA = 25 C Operating and Storage Junction Temperature Range -55 to +150 A mJ W C Thermal Characteristics RJC Thermal Resistance, Junction to Case 5.6 4.9 RJA Thermal Resistance, Junction to Ambient 60Note1a 55Note1b RJA Thermal Resistance, Junction to Ambient 130Note1c 120Note1d (c)2015 Fairchild Semiconductor Corporation FDPC5030SG Rev.1.0 1 C/W www.fairchildsemi.com FDPC5030SG PowerTrench(R) Power Clip May 2015 Device Marking FDPC5030SG Device FDPC5030SG Package Power Clip 56 Reel Size 13 " Tape Width 12 mm Quantity 3000 units Electrical Characteristics TJ = 25 C unless otherwise noted. Symbol Parameter Test Conditions Type Min 30 30 Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0 V ID = 1 mA, VGS = 0 V Q1 Q2 BVDSS TJ Breakdown Voltage Temperature Coefficient ID = 250 A, referenced to 25 C ID = 10 mA, referenced to 25 C Q1 Q2 IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V Q1 Q2 1 500 A A IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS= 0 V VGS = 12 V, VDS= 0 V Q1 Q2 100 100 nA nA 3.0 3.0 V V 15 16 mV/C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 A VGS = VDS, ID = 1 mA Q1 Q2 VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 A, referenced to 25 C ID = 10 mA, referenced to 25 C Q1 Q2 -5 -3 VGS = 10V, ID = 17 A VGS = 4.5 V, ID = 14 A VGS = 10 V, ID = 17 A,TJ =125 C Q1 4.1 5.4 5.7 5.0 6.5 7.0 VGS = 10V, ID = 25 A VGS = 4.5 V, ID = 22 A VGS = 10 V, ID = 25 A ,TJ =125 C Q2 1.9 2.4 2.7 2.4 3.0 3.4 VDS = 5 V, ID = 17 A VDS = 5 V, ID = 25 A Q1 Q2 93 139 Q1 Q2 1224 2730 1715 3825 pF Q1 Q2 397 801 560 1125 pF Q1 Q2 42 72 60 100 pF 0.5 1.1 1.5 2.2 rDS(on) gFS Drain to Source On Resistance Forward Transconductance 1.0 1.0 1.7 1.6 mV/C m S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Q1: VDS = 15 V, VGS = 0 V, f = 1 MHZ Q2: VDS = 15 V, VGS = 0 V, f = 1 MHZ Q1 Q2 0.1 0.1 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge (c)2015 Fairchild Semiconductor Corporation FDPC5030SG Rev.1.0 Q1: VDD = 15 V, ID = 17 A, RGEN = 6 Q2: VDD = 15 V, ID = 25 A, RGEN = 6 VGS = 0 V to 10 V Q1 V = 15 V, ID VGS = 0 V to 4.5 V DD = 17 A Q2 VDD = 15 V, ID = 25 A 2 Q1 Q2 8 10 16 19 ns Q1 Q2 2 4 10 10 ns Q1 Q2 18 30 33 48 ns Q1 Q2 2 3 10 10 ns Q1 Q2 17 39 24 55 nC Q1 Q2 8 18 11 26 nC Q1 Q2 3.1 6.1 nC Q1 Q2 2.0 4.3 nC www.fairchildsemi.com FDPC5030SG PowerTrench(R) Power Clip Package Marking and Ordering Information Symbol Parameter Test Conditions Type Min Typ Max Units Q1 Q2 0.8 0.8 1.2 1.2 V Q1 Q2 23 27 37 44 ns Q1 Q2 8 31 16 50 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 17 A VGS = 0 V, IS = 25 A (Note 2) (Note 2) Q1 IF = 17 A, di/dt = 100 A/s Q2 IF = 25 A, di/dt = 230 A/s Notes: 1.RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material, RCA is determined by the user's board design. b. 55 C/W when mounted on a 1 in2 pad of 2 oz copper a. 60 C/W when mounted on a 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G d. 120 C/W when mounted on a minimum pad of 2 oz copper c. 130 C/W when mounted on a minimum pad of 2 oz copper SS SF DS DF G SS SF DS DF G 2 Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3. Q1 :EAS of 54 mJ is based on starting TJ = 25 oC; L = 3 mH, IAS = 6 A, VDD = 30 V, VGS = 10 V. 100% tested at L = 0.1 mH, IAS =20 A. Q2: EAS of 96 mJ is based on starting TJ = 25 oC; L = 3 mH, IAS = 8 A, VDD = 30 V, VGS = 10 V. 100% tested at L = 0.1 mH, IAS =27 A. 4. Pulsed Id refer to Fig.11 and Fig.24 SOA curve for more details. 5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design. (c)2015 Fairchild Semiconductor Corporation FDPC5030SG Rev.1.0 3 www.fairchildsemi.com FDPC5030SG PowerTrench(R) Power Clip Electrical Characteristics TJ = 25 C unless otherwise noted. 6.0 VGS = 10 V VGS = 4.5 V VGS = 6 V ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 VGS = 3.5 V 45 30 VGS = 3 V 15 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0 0.0 0.2 0.4 0.6 0.8 4.5 3.0 VGS = 3.5 V VGS = 4.5 V 1.5 VGS = 6 V 0.0 1.0 0 15 VDS, DRAIN TO SOURCE VOLTAGE (V) 45 60 40 ID = 17 A VGS = 10 V 1.5 rDS(on), DRAIN TO 1.4 1.3 1.2 1.1 1.0 0.9 0.8 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 30 Figure 2. Normalized On-Resistance vs. Drain Current and Gate Voltage 1.6 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 30 ID = 17 A 20 10 TJ = 25 oC 0 100 125 150 TJ = 125 oC 2 TJ, JUNCTION TEMPERATURE (oC) 3 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs. Junction Temperature Figure 4. On-Resistance vs. Gate to Source Voltage 60 IS, REVERSE DRAIN CURRENT (A) 60 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) VGS = 10 V ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 45 VDS = 5 V 30 TJ = 150 oC TJ = 25 oC 15 TJ = -55 oC 0 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 3 V 0 1 2 3 4 1 TJ = 150 oC 0.1 TJ = 25 oC TJ = -55 oC 0.01 0.001 0.0 5 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics (c)2015 Fairchild Semiconductor Corporation FDPC5030SG Rev.1.0 VGS = 0 V 10 Figure 6. Source to Drain Diode Forward Voltage vs. Source Current 4 www.fairchildsemi.com FDPC5030SG PowerTrench(R) Power Clip Typical Characteristics (Q1 N-Channel) TJ = 25C unless otherwise noted. 3000 ID = 17 A Ciss 1000 8 VDD = 10 V 6 VDD = 15 V VDD = 20 V 4 2 0 0 4 8 12 Coss CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 16 100 Crss f = 1 MHz VGS = 0 V 10 0.1 20 1 Figure 7. Gate Charge Characteristics 60 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 30 Figure 8. Capacitance vs. Drain to Source Voltage 30 10 TJ = 25 oC TJ = 125 oC 45 VGS = 10 V 30 VGS = 4.5 V 15 o RJC = 5.6 C/W 1 0.001 0.01 0.1 1 10 0 25 100 50 75 100 Figure 10. Maximum Continuous Drain Current vs. Case Temperature 5000 P(PK), PEAK TRANSIENT POWER (W) 500 100 SINGLE PULSE RJC = 5.6 oC/W 1000 10 s 1 THIS AREA IS LIMITED BY rDS(on) 100 s SINGLE PULSE TJ = MAX RATED RJC = 5.6 oC/W 0.1 0.1 150 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 10 125 o tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) CURVE BENT TO MEASURED DATA TC = 25 oC 1 10 1 ms 10 ms DC 80 100 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Forward Bias Safe Operating Area (c)2015 Fairchild Semiconductor Corporation FDPC5030SG Rev.1.0 TC = 25 oC 5 www.fairchildsemi.com FDPC5030SG PowerTrench(R) Power Clip Typical Characteristics (Q1 N-Channel) TJ = 25C unless otherwise noted. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE NOTES: ZJC(t) = r(t) x RJC RJC = 5.6 oC/W Peak TJ = PDM x ZJC(t) + TC Duty Cycle, D = t1 / t2 0.001 -5 10 -4 10 -3 -2 10 10 -1 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Case Transient Thermal Response Curve (c)2015 Fairchild Semiconductor Corporation FDPC5030SG Rev.1.0 6 www.fairchildsemi.com FDPC5030SG PowerTrench(R) Power Clip Typical Characteristics (Q1 N-Channel) TJ = 25C unless otherwise noted. 10 VGS = 10 V 90 VGS = 4.5 V VGS = 3.5 V 60 VGS = 3 V 30 0 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 2.5 V 0 1 2 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 120 8 VGS = 2.5 V 6 VGS = 3 V 4 VGS = 3.5 V 2 0 3 VGS = 4.5 V 0 24 VDS, DRAIN TO SOURCE VOLTAGE (V) 96 120 Figure 15. Normalized on-Resistance vs. Drain Current and Gate Voltage 20 ID = 25 A VGS = 10 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (m) 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 72 ID, DRAIN CURRENT (A) Figure 14. On- Region Characteristics PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 15 ID = 25 A 10 0 100 125 150 TJ = 125 oC 5 TJ = 25 oC 2 TJ, JUNCTION TEMPERATURE (oC) IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VDS = 5 V 80 TJ = 125 oC 60 TJ = 25 oC 40 TJ = -55 oC 20 0 1.0 1.5 2.0 2.5 3.0 200 100 5 6 7 8 9 10 VGS = 0 V 10 TJ = 125 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 18. Transfer Characteristics (c)2015 Fairchild Semiconductor Corporation FDPC5030SG Rev.1.0 4 Figure 17. On-Resistance vs. Gate to Source Voltage 120 100 3 VGS, GATE TO SOURCE VOLTAGE (V) Figure 16. Normalized On-Resistance vs. Junction Temperature ID, DRAIN CURRENT (A) VGS = 10 V 48 Figure 19. Source to Drain Diode Forward Voltage vs. Source Current 7 www.fairchildsemi.com FDPC5030SG PowerTrench(R) Power Clip Typical Characteristics (Q2 N-Channel) TJ = 25 C unless otherwise noted. 10000 ID = 25 A 8 VDD = 15 V VDD = 10 V 6 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 20 V 4 2 0 0 10 20 30 40 Ciss 1000 Coss 100 f = 1 MHz VGS = 0 V 10 0.1 50 10 30 Figure 21. Capacitance vs. Drain to Source Voltage Figure 20. Gate Charge Characteristics 100 ID, DRAIN CURRENT (A) 100 IAS, AVALANCHE CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 80 VGS = 10 V 60 VGS = 4.5 V 40 20 o RJC = 4.9 C/W 1 0.001 0.01 0.1 1 10 0 25 100 50 150 10000 P(PK), PEAK TRANSIENT POWER (W) 100 10 s THIS AREA IS LIMITED BY rDS(on) 100 s SINGLE PULSE TJ = MAX RATED 1 ms 10 ms RJC = 4.9 oC/W 0.1 0.1 125 Figure 23. Maximum Continuous Drain Current vs. Case Temperature 1000 1 100 TC, CASE TEMPERATURE ( C) Figure 22. Unclamped Inductive Switching Capability 10 75 o tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) Crss CURVE BENT TO MEASURED DATA TC = 25 oC 1 10 TC = 25 oC 1000 DC 100 100 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 25. Single Pulse Maximum Power Dissipation Figure 24. Forward Bias Safe Operating Area (c)2015 Fairchild Semiconductor Corporation FDPC5030SG Rev.1.0 SINGLE PULSE RJC = 4.9 oC/W 8 www.fairchildsemi.com FDPC5030SG PowerTrench(R) Power Clip Typical Characteristics (Q2 N-Channel) TJ = 25C unless otherwise noted. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: 0.01 ZJC(t) = r(t) x RJC RJC = 4.9 oC/W Peak TJ = PDM x ZJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 -5 10 -4 10 -3 -2 10 10 -1 10 1 t, RECTANGULAR PULSE DURATION (sec) Figure 26. Junction-to-Case Transient Thermal Response Curve (c)2015 Fairchild Semiconductor Corporation FDPC5030SG Rev.1.0 9 www.fairchildsemi.com FDPC5030SG PowerTrench(R) Power Clip Typical Characteristics (Q2 N-Channel) TJ = 25 C unless otherwise noted. SyncFETTM Schottky Body Diode Characteristics Fairchild's SyncFETTM process embeds a Schottky diode in parallel with PowerTrench(R) MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 27 shows the reverse recovery characteristic of the FDPC5030SG. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 30 IDSS, REVERSE LEAKAGE CURRENT (A) -2 25 CURRENT (A) 20 di/dt = 230 A/s 15 10 5 0 -5 0 100 200 300 400 500 TIME (ns) TJ = 125 oC -3 10 TJ = 100 oC -4 10 -5 10 TJ = 25 oC -6 10 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) Figure 27. FDPC5030SG SyncFETTM Body Diode Reverse Recovery Characteristic (c)2015 Fairchild Semiconductor Corporation FDPC5030SG Rev.1.0 10 Figure 28. SyncFETTM Body Diode Reverse Leakage vs. Drain-Source Voltage 10 www.fairchildsemi.com FDPC5030SG PowerTrench(R) Power Clip Typical Characteristics (continued) FDPC5030SG PowerTrench(R) Power Clip Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. (c)2015 Fairchild Semiconductor Corporation FDPC5030SG Rev.1.0 11 www.fairchildsemi.com AccuPowerTM AttitudeEngineTM Awinda(R) AX-CAP(R)* BitSiCTM Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM DEUXPEED(R) Dual CoolTM EcoSPARK(R) EfficentMaxTM ESBCTM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FETBenchTM FPSTM F-PFSTM FRFET(R) Global Power ResourceSM GreenBridgeTM Green FPSTM Green FPSTM e-SeriesTM GmaxTM GTOTM IntelliMAXTM ISOPLANARTM Marking Small Speakers Sound Louder and BetterTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MicroPak2TM MillerDriveTM MotionMaxTM MotionGrid(R) MTi(R) MTx(R) MVN(R) mWSaver(R) OptoHiTTM OPTOLOGIC(R) OPTOPLANAR(R) (R)* (R) tm Power Supply WebDesignerTM PowerTrench(R) PowerXSTM Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM Saving our world, 1mW/W/kW at a timeTM SignalWiseTM SmartMaxTM SMART STARTTM Solutions for Your SuccessTM SPM(R) STEALTHTM SuperFET(R) SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOS(R) SyncFETTM Sync-LockTM TinyBoost(R) TinyBuck(R) TinyCalcTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM TranSiCTM TriFault DetectTM TRUECURRENT(R)* SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM VoltagePlusTM XSTM XsensTM TM *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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