MS3011
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE LINEAR APPLICATIONS
DESCRIPTION: DESCRIPTION:
The MS3011 is a hermetically sealed NPN power transistor
featuring a unique matrix structure. This device is specifi-
cally designed for Class A linear applications to provide
high gain and high output power at the 1.0 dB compression
point.
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
PDISS Power Dissipation 5.5 W
VCE Collector-Emitter Bias Voltage 20 V
ICDevice Current 500 mA
TJJunction Temperature 200 ºC
TSTG Storage Temperature -65 to +200 ºC
Thermal DataThermal Data
RTH(J-C) Thermal Resistance Junction-case 17 °°C/W
Features
· 2.0 GHz
· POUT = 30.0 dBm
· GP = 7.0 dB MINIMUM
· 15:1 VSWR @ RATED CONDITIONS
· GOLD METALIZATION
· COMMON EMITTER CONFIGURATION
12-10-2002
MS3011
ELECTRICAL SPECIFICATIONS ( ELECTRICAL SPECIFICATIONS (Tcase = 25Tcase = 25°°C)C)
STATICSTATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BVCBO IC = 1mA IE = 0mA 50 --- --- V
BVEBO IE = 1mA IC = 0mA 3.5 --- --- V
BVCEO IC = 5mA IB = 0mA 20 --- --- V
ICEO VCE = 18V --- --- 1.0 mA
HFE VCE = 5V IC = 250mA 15 --- 120 ---
DYNAMICDYNAMIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
GPf = 2.0GHz POUT = 30.0 dBm 7.0 --- --- dB
+GPf = 2.0GHz POUT = 30.0 dBm +POUT = 10dB --- --- 1.0 dB
COB f = 1 MHz VCB = 28V --- --- 5.0 pf
Conditions VCE = 18V IC = 220mA
12-10-2002
12-10-2002
MS3011
PACKAGE MECHANICAL DATA
