MS3011
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE LINEAR APPLICATIONS
DESCRIPTION: DESCRIPTION:
The MS3011 is a hermetically sealed NPN power transistor
featuring a unique matrix structure. This device is specifi-
cally designed for Class A linear applications to provide
high gain and high output power at the 1.0 dB compression
point.
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
PDISS Power Dissipation 5.5 W
VCE Collector-Emitter Bias Voltage 20 V
ICDevice Current 500 mA
TJJunction Temperature 200 ºC
TSTG Storage Temperature -65 to +200 ºC
Thermal DataThermal Data
RTH(J-C) Thermal Resistance Junction-case 17 °°C/W
Features
· 2.0 GHz
· POUT = 30.0 dBm
· GP = 7.0 dB MINIMUM
· 15:1 VSWR @ RATED CONDITIONS
· GOLD METALIZATION
· COMMON EMITTER CONFIGURATION
12-10-2002