CREAT BY ART
- Low profile package
- Ideal for automated placement
- Glass passivated junction
- Excellent clamping capability
- Typical I
R
less than 1μA above 10V
- Halogen-free according to IEC 61249-2-21
Molding compound: UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
SYMBOL UNIT
P
PK
W
T
J
°C
T
STG
°C
Note 1: Non-repetitive current pulse per fig. 3 and derated above T
A
=25°C per fig. 2
1. For bidirectional use C or CA suffix for types P4SMA6.8 - types P4SMA200A
2. Electrical characteristics apply in both directions
PART NO.
Note 1: "xxxx" defines voltage from 6.8V (P4SMA6.8) to 200V (P4SMA200A)
*: Optional available. For packing code E3 and E2 with green compound only
PART NO.
Version: P1601
7,500 / 13" Paper reel
Folded SMA 7,500 / 13" Plastic reel
P4SMA SERIES
Taiwan Semiconductor
400W, 6.8V - 200V Surface Mount Transient Volta
g
e Su
pp
ressor
FEATURES
Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Fast response time: Typically less than 1.0ps
DO-214AC (SMA)
MECHANICAL DATA
Case: DO-214AC (SMA)
Polarity: Indicated by cathode band
Weight: 0.06 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
PARAMETER VALUE
Peak power dissipation at T
A
=25°C, tp=1ms (Note 1) 400
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
40 A
Operating junction temperature range - 55 to +150
Maximum instantaneous forward voltage at 25 A for
unidirectional only V
F
V3.5
Storage temperature range - 55 to +150
Devices for bipolar applications
ORDERING INFORMATION
PART NO.
SUFFIX PACKING CODE PACKING CODE
SUFFIX
(*)
PACKAGE PACKING
H
R3
G
SMA 1,800 / 7" Plastic reel
R2 SMA 7,500 / 13" Paper reel
M2 SMA 7,500 / 13" Plastic reel
F3 Folded SMA 1,800 / 7" Plastic reel
E3 Clip SMA 1,800 / 7" Plastic reel
F2
F4
Folded SMA
E2 Clip SMA 7,500 / 13" Plastic reel
EXAMPLE
EXAMPLE
PART NO.
PART NO.
SUFFIX PACKING CODE PACKING CODE
SUFFIX DESCRIPTION
P4SMAxxxx
(Note 1)
AEC-Q101 qualified
Green compound
P4SMA200AHR3G P4SMA200A H R3 G
Version: P1601
P4SMA SERIES
Taiwan Semiconductor
RATINGS AND CHARACTERISTICS CURVES (T
A
=25°C unless otherwise noted)
0
25
50
75
100
125
0 25 50 75 100 125 150 175 200
PEAK PULSE POWER(PPP) OR CURRENT (IPP) A
DERATING IN PERCENTAGE (%)
TA, AMBIENT TEMPERATURE (°C)
FIG.2 PULSE DERATING CURVE
0
10
20
30
40
50
1 10 100
IFSM, PEAK FORWARD SURGE CURRENT (A)
NUMBER OF CYCLES AT 60 Hz
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT UNIDIRECTIONAL ONLY
8.3ms single half sine wave
0
20
40
60
80
100
120
140
00.511.522.533.54
PEAK PULSE CURRENT (%)
t, TIME ms
FIG. 3 CLAMPING POWER PULSE WAVEFORM
td
Peak value
IPPM
tr=10μs
Half value-IPPM/2
10/1000μs, waveform
as defined by R.E.A.
Pulse width(td) is defined
as the point where the peak
current decays to 50% of IPPM
10
100
1000
10000
100000
1 10 100
CJ, JUNCTION CAPACITANCE (pF) A
V(BR), BREAKDOWN VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vsig=50mVp-p
VR=0
Measured at
stand-off
voltage, Vwm
0.1
1
10
100
0.1 1 10 100 1000 10000
PPPM, PEAK PULSE POWER, KW
tp, PULSE WIDTH, (μs)
FIG. 1 PEAK PULSE POWER RATING CURVE
Non-repetitive
pulse waveform
shown in fig.3
Test Stand-Off Maximum Maximum Maximum Maximum
Current Voltage Reverse Leakage Peak Pulse Clamping Voltage Temperature
I
T
V
WM
@ V
WM
Current I
PPM
@ I
PPM
Coefficient
Min Max (mA) (V) I
R
(μA) (A) (Note 2) Vc (V) of V
BR
(%/°C)
P4SMA6.8 ADJ 6.12 7.48 10 5.50 1000 38.0 10.8 0.057
P4SMA6.8A AEJ 6.46 7.14 10 5.80 1000 40.0 10.5 0.057
P4SMA7.5 AFJ 6.75 8.25 10 6.05 500 35.0 11.7 0.061
P4SMA7.5A AGJ 7.13 7.88 10 6.40 500 37.0 11.3 0.061
P4SMA8.2 AHJ 7.38 9.02 10 6.63 200 33.0 12.5 0.065
P4SMA8.2A AKJ 7.79 8.61 10 7.02 200 34.0 12.1 0.065
P4SMA9.1 ALJ 8.19 10.00 1.0 7.37 50 30.0 13.8 0.068
P4SMA9.1A AMJ 8.65 9.55 1.0 7.78 50 31.0 13.4 0.068
P4SMA10 ANJ 9.00 11.00 1.0 8.10 10 28.0 15.0 0.073
P4SMA10A APJ 9.50 10.50 1.0 8.55 10 29.0 14.5 0.073
P4SMA11 AQJ 9.90 12.10 1.0 8.92 1 26.0 16.2 0.075
P4SMA11A ARJ 10.50 11.60 1.0 9.40 1 27.0 15.6 0.075
P4SMA12 ASJ 10.80 13.20 1.0 9.72 1 24.0 17.3 0.078
P4SMA12A ATJ 11.40 12.60 1.0 10.2 1 25.0 16.7 0.078
P4SMA13 AUJ 11.70 14.30 1.0 10.5 1 22.0 19.0 0.081
P4SMA13A AVJ 12.40 13.70 1.0 11.1 1 23.0 18.2 0.081
P4SMA15 AWJ 13.50 16.50 1.0 12.1 1 19.0 22.0 0.084
P4SMA15A AXJ 14.30 15.80 1.0 12.8 1 20.0 21.2 0.084
P4SMA16 AYJ 14.40 17.60 1.0 12.9 1 17.8 23.5 0.086
P4SMA16A AZJ 15.20 16.80 1.0 13.6 1 18.6 22.5 0.086
P4SMA18 BDJ 16.20 19.80 1.0 14.5 1 16.0 26.5 0.088
P4SMA18A BEJ 17.10 18.90 1.0 15.3 1 16.5 25.5 0.088
P4SMA20 BFJ 18.00 22.00 1.0 16.2 1 14.0 29.1 0.090
P4SMA20A BGJ 19.00 21.00 1.0 17.1 1 15.0 27.7 0.090
P4SMA22 BHJ 19.80 24.20 1.0 17.8 1 13.0 31.9 0.092
P4SMA22A BKJ 20.90 23.10 1.0 18.8 1 13.7 30.6 0.092
P4SMA24 BLJ 21.60 26.40 1.0 19.4 1 12.0 34.7 0.094
P4SMA24A BMJ 22.80 25.20 1.0 20.5 1 12.6 33.2 0.094
P4SMA27 BNJ 24.30 29.70 1.0 21.8 1 10.7 39.1 0.096
P4SMA27A BPJ 25.70 28.40 1.0 23.1 1 11.0 37.5 0.096
P4SMA30 BQJ 27.00 33.00 1.0 24.3 1 9.6 43.5 0.097
P4SMA30A BRJ 28.50 31.50 1.0 25.6 1 10.0 41.4 0.097
P4SMA33 BSJ 29.70 36.30 1.0 26.8 1 8.8 47.7 0.098
P4SMA33A BTJ 31.40 34.70 1.0 28.2 1 9.0 45.7 0.098
P4SMA36 BUJ 32.40 39.60 1.0 29.1 1 8.0 52.0 0.099
P4SMA36A BVJ 34.20 37.80 1.0 30.8 1 8.4 49.9 0.099
P4SMA39 BWJ 35.10 42.90 1.0 31.6 1 7.4 56.4 0.100
P4SMA39A BXJ 37.10 41.00 1.0 33.3 1 7.7 53.9 0.100
P4SMA43 BYJ 38.70 47.30 1.0 34.8 1 6.7 61.9 0.101
P4SMA43A BZJ 40.90 45.20 1.0 36.8 1 7.0 59.3 0.101
P4SMA47 CDJ 42.30 51.70 1.0 38.1 1 6.2 67.8 0.101
P4SMA47A CEJ 44.70 49.40 1.0 40.2 1 6.4 64.8 0.101
P4SMA51 CFJ 45.90 56.10 1.0 41.3 1 5.7 73.5 0.102
P4SMA51A CGJ 48.50 53.60 1.0 43.6 1 6.0 70.1 0.102
P4SMA56 CHJ 50.40 61.60 1.0 45.4 1 5.2 80.5 0.103
P4SMA56A CKJ 53.20 58.80 1.0 47.8 1 5.4 77.0 0.103
Version: P1601
Device
P4SMA SERIES
Taiwan Semiconductor
Device
Marking
Code
Breakdown Voltage
V
BR
(V)
(Note 1)
Test Stand-Off Maximum Maximum Maximum Maximum
Current Voltage Reverse Leakage Peak Pulse Clamping Voltage Temperature
I
T
V
WM
@ V
WM
Current I
PPM
@ I
PPM
Coefficient
Min Max (mA) (V) I
R
(μA) (A) (Note 2) Vc (V) of V
BR
(%/°C)
P4SMA62 CLJ 55.8 68.2 1.0 50.2 1 4.7 89.0 0.104
P4SMA62A CMJ 58.9 65.1 1.0 53.0 1 5.0 85.0 0.104
P4SMA68 CNJ 61.2 74.8 1.0 55.1 1 4.2 98.0 0.104
P4SMA68A CPJ 64.6 71.4 1.0 58.1 1 4.5 92.0 0.104
P4SMA75 CQJ 67.5 82.5 1.0 60.7 1 3.8 108 0.105
P4SMA75A CRJ 71.3 78.8 1.0 64.1 1 4.0 103 0.105
P4SMA82 CSJ 73.8 90.2 1.0 66.4 1 3.5 118 0.105
P4SMA82A CTJ 77.9 86.1 1.0 70.1 1 3.7 113 0.105
P4SMA91 CUJ 81.9 100 1.0 73.7 1 3.2 131 0.106
P4SMA91A CVJ 86.5 95.5 1.0 77.8 1 3.3 125 0.106
P4SMA100 CWJ 90 110 1.0 81.0 1 2.9 144 0.106
P4SMA100A CXJ 95 105 1.0 85.5 1 3.0 137 0.106
P4SMA110 CYJ 99 121 1.0 89.2 1 2.6 158 0.107
P4SMA110A CZJ 105 116 1.0 94.0 1 2.7 152 0.107
P4SMA120 RDJ 108 132 1.0 97.2 1 2.4 173 0.107
P4SMA120A REJ 114 126 1.0 102 1 2.5 165 0.107
P4SMA130 RFJ 117 143 1.0 105 1 2.2 187 0.107
P4SMA130A RGJ 124 137 1.0 111 1 2.3 179 0.107
P4SMA150 RHJ 135 165 1.0 121 1 1.9 215 0.108
P4SMA150A RKJ 143 158 1.0 128 1 2.0 207 0.108
P4SMA160 RLJ 144 176 1.0 130 1 1.8 230 0.108
P4SMA160A RMJ 152 168 1.0 136 1 1.9 219 0.108
P4SMA170 RNJ 153 187 1.0 138 1 1.7 244 0.108
P4SMA170A RPJ 162 179 1.0 145 1 1.8 234 0.108
P4SMA180 RQJ 162 198 1.0 146 1 1.6 258 0.108
P4SMA180A RRJ 171 189 1.0 154 1 1.7 246 0.108
P4SMA200 RSJ 180 220 1.0 162 1 1.4 287 0.108
P4SMA200A RTJ 190 210 1.0 171 1 1.51 274 0.108
Notes:
1. V
BR
measure after I
T
applied for 300μs, I
T
=square wave pulse or equivalent.
2. Surge current waveform per figure. 3 and derate per figure. 2.
3. For bipolar types having V
WM
of 10 volts and under, the I
D
limit is doubled.
4. For bidirectional use C or CA suffix for types PS4MA6.8 through P4SMA200A.
5. All terms and symbols are consistent with ANSI/IEEE C62.35.
Version: P1601
P4SMA SERIES
Taiwan Semiconductor
Device
Device
Marking
Code
Breakdown Voltage
V
BR
(V)
(Note 1)
Min Max Min Max
A 1.27 1.58 0.050 0.062
B 4.06 4.60 0.160 0.181
C 2.29 2.83 0.090 0.111
D 1.99 2.50 0.078 0.098
E 0.90 1.41 0.035 0.056
F 4.95 5.33 0.195 0.210
G 0.10 0.20 0.004 0.008
H 0.15 0.31 0.006 0.012
P/N = Device Marking Code
G = Green Compound
YW = Date Code
F = Factory Code
Note: Cathode band for uni-directional products only
Version: P1601
E 5.45 0.215
0.066
B 1.52 0.060
D 2.41 0.095
P4SMA SERIES
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM. Unit (mm) Unit (inch)
DO-214AC (SMA)
SUGG ESTED PAD LAY OUT
Symbol Unit (mm) Unit (inch)
MARKING DIAGRAM
C 3.93 0.155
A1.68
CREAT BY ART
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Version: P1601
P4SMA SERIES
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
