2SK1670 Silicon N-Channel MOS FET ADE-208-1311 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 90 ns) Suitable for motor control, switching regulator and DC - DC converter Outline TO-3PFM D G 1 S 2 3 1. Gate 2. Drain 3. Source 2SK1670 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 250 V Gate to source voltage VGSS 30 V Drain current ID 30 A 120 A 30 A Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR 2 1 Channel dissipation Pch* 60 W Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Notes 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C 2 2SK1670 Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 250 -- -- V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 30 -- -- V I G = 100 A, VDS = 0 Gate to source leak current I GSS -- -- 10 A VGS = 25 V, VDS = 0 Zero gate voltage drain current I DSS -- -- 250 A VDS = 200 V, VGS = 0 Gate to source cutoff voltage VGS(off) 2.0 -- 3.0 V I D = 1 mA, VDS = 10 V Static drain to source on state resistance RDS(on) -- 0.075 0.095 I D = 15 A, VGS = 10 V *1 Forward transfer admittance |yfs| 12 20 -- S I D = 15 A, VDS = 10 V *1 Input capacitance Ciss -- 3100 -- pF VDS = 10 V, VGS = 0, Output capacitance Coss -- 1330 -- pF f = 1 MHz Reverse transfer capacitance Crss -- 190 -- pF Turn-on delay time t d(on) -- 45 -- ns I D = 15 A, VGS = 10 V, Rise time tr -- 170 -- ns RL = 2 Turn-off delay time t d(off) -- 270 -- ns Fall time tf -- 150 -- ns Body to drain diode forward voltage VDF -- 1.0 -- V I F = 30 A, VGS = 0 Body to drain diode reverse recovery time t rr -- 90 -- ns I F = 30 A, VGS = 0, diF/dt = 100 A/s Note 1. Pulse test See characteristic curves of 2SK1669. 3 2SK1670 Power vs. Temperature Derating Maximum Safe Operation Area 1,000 300 Drain Current ID (A) Channel Dissipation Pch (W) 120 80 40 100 30 DC 10 er 3 s s 0 PW Op 10 10 = 1 10 s s( at ion 1 (T C Ta = 25C m m = 1 Sh ot ) 25 C ) 0.3 Operation in this area is limited by RDS (on) 0.1 Normalized Transient Thermal Impedance S (t) 0 4 50 100 Case Temperature TC (C) 150 1 3 30 10 100 300 1,000 Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 TC = 25C D=1 0.5 0.3 0.1 0.03 0.2 ch-c (t) = S (t) * ch-c ch-c = 2.08C/W, TC = 25C 0.1 0.05 PDM 0.02 0.01 lse t Pu T ho 0.01 10 1S 100 1m 10 m Pulse Width PW (s) 100 m PW 1 D = PW T 10 2SK1670 Package Dimensions As of January, 2001 3.2 0.3 1.6 0.86 0.66 5.45 0.5 21.0 0.5 4.0 0.3 2.6 0.86 2.7 0.3 2.0 0.3 0.4 3.2 +- 0.2 5.5 0.3 5.0 0.3 19.9 0.3 15.6 0.3 5.0 0.3 Unit: mm + 0.2 - 0.1 0.2 0.9 +- 0.1 5.45 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) TO-3PFM -- -- 5.2 g 5 2SK1670 Cautions 1. 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