VUO82-12NO7 3~ Rectifier Standard Rectifier Module VRRM = 1200 V I DAV = 90 A I FSM = 750 A 3~ Rectifier Bridge Part number VUO82-12NO7 - ~ ~ ~ + Features / Advantages: Applications: Package: PWS-D Package with DCB ceramic Improved temperature and power cycling Planar passivated chips Very low forward voltage drop Very low leakage current Diode for main rectification For three phase bridge configurations Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors Industry standard outline RoHS compliant Easy to mount with two screws Base plate: Copper internally DCB isolated Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130410a VUO82-12NO7 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 1300 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 1200 V IR reverse current VR = 1200 V TVJ = 25C 100 A VR = 1200 V TVJ = 150C 1.5 mA TVJ = 25C 1.08 V 1.35 V 0.99 V VF IF = forward voltage drop 30 A IF = 90 A IF = 30 A bridge output current IF = 90 A VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 1.33 V T VJ = 150 C 90 A TVJ = 150 C 0.78 V d= for power loss calculation only Ptot typ. TVJ = 125 C TC = 115C I DAV It min. 6 m 0.9 K/W 0.4 K/W TC = 25C 135 W t = 10 ms; (50 Hz), sine TVJ = 45C 750 A t = 8,3 ms; (60 Hz), sine VR = 0 V 810 A t = 10 ms; (50 Hz), sine TVJ = 150 C 640 A A t = 8,3 ms; (60 Hz), sine VR = 0 V 690 t = 10 ms; (50 Hz), sine TVJ = 45C 2.82 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 2.73 kAs TVJ = 150 C 2.05 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25C Data according to IEC 60747and per semiconductor unless otherwise specified 1.98 kAs 27 pF 20130410a VUO82-12NO7 Package Ratings PWS-D Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. max. 150 Unit A -40 125 C -40 150 C Weight typ. 159 MD mounting torque MT terminal torque d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL t = 1 minute Made in Germany Product Number 4.25 5.75 4.25 5.75 Nm Nm terminal to terminal 9.5 mm terminal to backside 26.0 mm 3000 V 2500 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL 1 mA Circuit Diagram XXXX-XXXX YYCW Lot# Date Code Ordering Standard Part Number VUO82-12NO7 Equivalent Circuits for Simulation I V0 R0 Marking on Product VUO82-12NO7 * on die level Delivery Mode Box Code No. 460419 T VJ = 150 C Rectifier V 0 max threshold voltage 0.78 V R 0 max slope resistance * 4.8 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20130410a VUO82-12NO7 Outlines PWS-D - IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved ~ ~ ~ + Data according to IEC 60747and per semiconductor unless otherwise specified 20130410a VUO82-12NO7 Rectifier 120 50 Hz 0.8 x V RRM 600 100 VR = 0 V TVJ = 45C 80 2 500 IF It TVJ = 45C 60 2 [A s] 400 40 TVJ = 150C [A] TVJ = 125C 150C 20 0 0.4 TVJ = 150C 1000 IFSM [A] 300 TVJ = 25C 0.8 1.2 100 0.001 1.6 0.010 0.100 1.000 1 10 VF [V] t [s] t [ms] Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current Fig. 3 I t versus time per diode 40 2 120 RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 30 Ptot 10000 DC = 0.6 KW 100 0.8 KW 20 1 KW 2 KW 4 KW 8 KW 1 0.5 80 0.4 IF(AV)M 0.33 60 0.17 [A] [W] 0.08 40 10 20 0 0 0 10 20 30 0 25 50 75 100 125 150 0 175 25 50 TA [C] IdAVM [A] 75 100 125 150 TC [C] Fig. 4 Power dissipation vs. direct output current & ambient temperature Fig. 5 Max. forward current vs. case temperature 1.0 Constants for ZthJC calculation: 0.8 ZthJC 0.6 [K/W] 0.4 0.2 i Rth (K/W) ti (s) 1 0.05 0.001 2 0.14 0.030 3 0.18 0.070 4 0.28 0.150 5 0.25 0.950 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130410a