VUO82-12NO7
3~ Rectifier Bridge
Standard Rectifier Module
-
~ +~ ~
Part number
VUO82-12NO7
Features / Ad vantages: Applications: Package:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● Diode for main rectification
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
PWS-D
● Industry standard outline
● RoHS compliant
● Easy to mount with two screws
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
RRM
1200
I90
FSM
750
DAV
V=V
A
A
=
=
I
3~
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130410aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO82-12NO7
V = V
kA²s
kA²s
kA²s
kA²s
Symbol Definition
Ratings
typ. max.
I
R
V
IA
V
F
1.08
R0.9 K/W
R
min.
90
V
RSM
V
100T = 25°C
VJ
T = °C
VJ
mA1.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
115
P
tot
135 WT = 25°C
C
RK/W0.4
30
1200
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Conditions Unit
1.35
T = 25°C
VJ
150
V
F0
V0.78T = °C
VJ
150
r
F
6mΩ
V0.99T = °C
VJ
I = A
F
V
30
1.33
I = A
F
90
I = A
F
90
threshold voltage
slope resistance for power loss calculation only
µA
125
V
RRM
V1200
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
27
j
unction capacitance V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
150
750
810
2.05
1.98
A
A
A
A
640
690
2.82
2.73
1200
DAV
d =rectangular ⅓
bridge output current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1300
IXYS reserves the right to change limits, conditions and dimensions. 20130410aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO82-12NO7
Ratings
XXXX-XXXX YYCW Lot#
Made in Germany Circuit
Diagram
Product
Number
Date Code
Package
T
VJ
°C
M
D
Nm5.75
mounting torque 4.25
T
stg
°C125
storage temperature -40
Weight g159
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp eratu re
Unit
M
T
Nm5.75
terminal torque 4.25
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
9.5
26.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 150 A
per terminal
150-40
terminal to terminal
PWS-D
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
VUO82-12NO7 460419Box 10VUO82-12NO7Standard
2500
3000
ISOL
threshold voltage V0.78
mΩ
V
0 max
R
0 max
slope resistance * 4.8
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Rectifier
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130410aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO82-12NO7
-
~ +~ ~
Outlines PWS-D
IXYS reserves the right to change limits, conditions and dimensions. 20130410aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
VUO82-12NO7
011
100
1000
10000
V
F
[V]
I
F
[A]
0.4 0.8 1.2 1.6
0
20
40
60
80
100
120
0.001 0.010 0.100 1.000
300
400
500
600
1 10 100 1000 10000
0.0
0.2
0.4
0.6
0.8
1.0
0 25 50 75 100 125 150 1750102030
0
10
20
30
40
0 25 50 75 100 125 150
0
20
40
60
80
100
120
I
FSM
[A]
t[s] t[ms]
I
2
t
[A
2
s]
P
tot
[W]
I
dAVM
[A] T
A
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJC
[K/W]
t[ms]
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation vs. direct output current & ambient temperature Fig. 5 Max. forward current vs.
case temperature
Fig. 6 Transient thermal impedance junction to case
Constants for Z
thJC
calculation:
iR
th
(K/W) t
i
(s)
1 0.05 0.001
2 0.14 0.030
3 0.18 0.070
4 0.28 0.150
5 0.25 0.950
0.8 x V
RRM
50 Hz
T
VJ
=45°C
T
VJ
=45°C
VR =0 V
R
thJA
:
0.6 KW
0.8 KW
1KW
2KW
4KW
8KW
DC =
1
0.5
0.4
0.33
0.17
0.08
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
=
125°C
150°C
T
VJ
=150°C
T
VJ
= 150°C
T
VJ
=25°C
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130410aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
