APL602B2 APL602L 600V 49A 0.125W D LINEAR MOSFET B2 G Linear Mosfets are optimized applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec). S T-MAXTM TO-264 L * Higher FBSOA * Popular T-MAXTM or TO-264 Package * Higher Power Dissipation MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25C unless otherwise specified. Parameter Drain-Source Voltage APL602 UNIT 600 Volts 49 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 VGSM Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 730 Watts Linear Derating Factor 5.84 W/C PD TJ,TSTG 196 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 49 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 50 4 mJ 3000 STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions / Part Number MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) 600 Volts ID(ON) On State Drain Current 49 Amps Symbol RDS(ON) IDSS IGSS VGS(TH) 2 (VDS > I D(ON) x R DS(ON) Max, VGS = 8V) Drain-Source On-State Resistance 2 TYP MAX 0.125 (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) 250 (VDS = VGS, ID = 2.5mA) Ohms A Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage UNIT 100 nA 4 Volts 2 SAFE OPERATING AREA CHARACTERISTICS SOA1 Safe Operating Area Test Conditions / Part Number MIN VDS = 400 V, IDS = 1.063A, t = 20 sec., TC = 60C 425 TYP MAX CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT Watts 050-5894 Rev B 7-2002 Symbol Characteristic APL602 DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic MIN TYP MAX Ciss Input Capacitance VGS = 0V 7485 9000 Coss Output Capacitance VDS = 25V 1290 1810 Reverse Transfer Capacitance f = 1 MHz 617 930 Turn-on Delay Time VGS = 15V 13 26 Crss td(on) tr Rise Time td(off) Turn-off Delay Time tf Fall Time VDD = 0.5 VDSS 27 54 ID = ID [Cont.] @ 25C 56 84 RG = 0.6 16 20 TYP MAX UNIT pF ns THERMAL CHARACTERISTICS Symbol Characteristic MIN RJC Junction to Case .17 RJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 2.50mH, R = 25, Peak I = 49A j G L APT Reserves the right to change, without notice, the specifications and information contained herein. 0.1 0.2 0.1 0.005 ID, DRAIN CURRENT (AMPERES) 0.05 0.02 0.01 120 PDM Note: 0.01 0.001 10-5 050-5894 Rev B 7-2002 D=0.5 0.05 t2 SINGLE PULSE Peak TJ = PDM x ZJC + TC 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 120 VGS=10V, 15 V VGS=10, 15V 80 8V 60 7.5 V 40 7V 20 10 t1 Duty Factor D = t1/t2 6.5 V 6V ID, DRAIN CURRENT (AMPERES) Z JC, THERMAL IMPEDANCE (C/W) 0.3 80 8V 60 7.5 V 40 7V 20 10 5.5 V 0 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS 6.5 V 6V 5.5 V 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3,LOW VOLTAGE OUTPUT CHARACTERISTICS UNIT C/W VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 60 40 TJ = +125C 20 TJ = -55C TJ = +25C 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 40 30 20 10 1.15 V VGS=10V 1.00 0.90 VGS=20V 0.80 0.70 0 25 20 40 60 80 100 120 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 D = 0.5 I D V GS [Cont.] = 10V VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) I 2.0 1.5 1.0 0.5 0.0 -50 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE -25 30,000 OPERATION HERE LIMITED BY RDS (ON) 100 100S 10,000 50 1mS 10 10mS 5 TC =+25C TJ =+150C SINGLE PULSE 1 5 10 50 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA C, CAPACITANCE (pF) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) D 1.10 2.5 1 GS 1.20 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 196 APL602 NORMALIZED TO = 10V @ 0.5 I [Cont.] Ciss 5,000 Coss 1,000 Crss 500 100mS 100 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 7-2002 0 1.30 050-5894 Rev B ID, DRAIN CURRENT (AMPERES) 50 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) 80 BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) Typical Performance Curves APL602 T-MAXTM (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.38 (.212) 6.20 (.244) 5.79 (.228) 6.20 (.244) Drain Drain 20.80 (.819) 21.46 (.845) 2.87 (.113) 3.12 (.123) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 25.48 (1.003) 26.49 (1.043) 19.81 (.780) 20.32 (.800) 19.81 (.780) 21.39 (.842) Gate Drain 1.01 (.040) 1.40 (.055) 2.29 (.090) 2.69 (.106) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) Gate Drain Source 050-5894 Rev B 7-2002 Source 2.21 (.087) 2.59 (.102) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 5.45 (.215) BSC 2-Plcs. 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) Dimensions in Millimeters and (Inches) 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058