Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
STATIC ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
050-5894 Rev B 7-2002
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage (VGS = 0V, I D = 250 µA)
On State Drain Current 2 (VDS > ID(ON) x RDS(ON) Max, VGS = 8V)
Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID [Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
MIN TYP MAX
600
49
0.125
25
250
±100
24
UNIT
Volts
Amps
Ohms
µA
nA
Volts
Symbol
BVDSS
ID(ON)
RDS(ON)
IDSS
IGSS
VGS(TH)
APT Website - http://www.advancedpower.com
LINEAR MOSFET
Linear Mosfets are optimized applications operating in the Linear
region where concurrent high voltage and high current can occur at
near DC conditions (>100 msec).
• Higher FBSOA
• Higher Power Dissipation
• Popular T-MAX™ or TO-264 Package
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
APL602
600
49
196
±30
±40
730
5.84
-55 to 150
300
49
50
3000
T-MAX™
TO-264
B2
APL602B2
APL602L
600V 49A 0.125W
G
D
S
L
Test Conditions / Part Number
VDS = 400 V, IDS = 1.063A, t = 20 sec., TC = 60°C Watts
Symbol
SOA1
MIN TYP MAX
425
UNIT
Characteristic
Safe Operating Area
SAFE OPERATING AREA CHARACTERISTICS