T1235T-8T 12 A SnubberlessTM Triac Datasheet - production data Features A2 * Medium current Triac * High static and dynamic commutation G * Three quadrants A1 * ECOPACK(R)2 compliant component A2 Applications * General purpose AC line load switching G A2 A1 * Motor control circuits * Small home appliances * Lighting TO-220AB (T1235T-8T) * Inrush current limiting circuits * Overvoltage crowbar protection Description Table 1. Device summary Symbol Value Unit IT(rms) 12 A VDRM, VRRM 800 V VDSM, VRSM 900 V IGT 35 mA Available in through-hole package, the T1235T-8T Triac can be used for the on/off or phase angle control function in general purpose AC switching where high commutation capability is required. This device can be used without a snubber circuit when the limits defined in this datasheet are respected. TM: Snubberless is a trademark of STMicroelectronics July 2014 This is information on a product in full production. DocID024572 Rev 3 1/9 www.st.com 9 Characteristics 1 T1235T-8T Characteristics Table 2. Absolute ratings (limiting values, Tj = 25 C unless otherwise stated) Symbol IT(rms) ITSM I t Parameter Value Unit A On-state rms current (full sine wave) Tc = 131 C 12 Non repetitive surge peak on-state F = 50 Hz current (full cycle, Tj initial = 25 C) F = 60 Hz t = 20 ms 90 t = 16.7 ms 95 It value for fusing, Tj initial = 25 C tp = 10 ms 54 Tj = 150 C 600 Tj = 125 C 800 A A s VDRM, VRRM Repetitive surge peak off-state voltage VDSM, VRSM Non repetitive surge peak off-state voltage tp = 10 ms 900 V dI/dt Critical rate of rise of on-state current IG = 2 x IGT, tr 100 ns F = 100 Hz 100 A/s IGM Peak gate current Tj = 150 C 4 A Tj = 150 C 1 W - 40 to + 150 - 40 to + 150 C 260 C PG(AV) tp = 20 s Average gate power dissipation Tstg Tj Storage junction temperature range Operating junction temperature range TL Maximum lead temperature for soldering during 10 s V Table 3. Electrical characteristics (Tj = 25 C, unless otherwise specified) Symbol Test conditions Quadrant Value Min. 1.75 Max. 35 I - II - III Max. 1.3 V I - II - III Min. 0.2 V Max. 40 mA IGT (1) VD = 12 V, RL = 30 I - II - III VGT VD = 12 V, RL = 30 VGD VD = VDRM, RL = 3.3 k, Tj = 125 C IH (2) IT = 500 mA IL IG = 1.2 IGT mA I - III dV/dt (dI/dt)c II VD = 536 V, gate open Tj = 125 C VD = 402 V, gate open Tj = 150 C Tj = 125 C Tj = 150 C 1. Minimum IGT is guaranteed at 5% of IGT max. 2. For both polarities of A2 referenced to A1 2/9 60 Max. Without snubber (dV/dt)c > 20 V/s) DocID024572 Rev 3 Unit mA 65 2000 V/s 1000 V/s Min. 12 Min. A/ms 6 T1235T-8T Characteristics Table 4. Static characteristics Symbol Test conditions VT (1) Value Unit ITM = 17 A, tp = 380 s Tj = 25 C Max. 1.55 V Vt0 (1) Threshold voltage Tj = 150 C Max. 0.85 V Rd (1) Dynamic resistance Tj = 150 C Max. 37 m 7.5 A Tj = 25 C VDRM = VRRM = 800 V IDRM IRRM Max. Tj = 125 C VDRM = VRRM = 600 V 1 mA Tj = 150 C Max. 2.7 1. For both polarities of A2 referenced to A1 Table 5. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) 1.3 C/W Rth(j-a) Junction to ambient 60 C/W Figure 1. Maximum power dissipation versus on-state rms current (full cycle) 16 Figure 2. On-state rms current versus case temperature (full cycle) P(W) 14 14 IT(RMS)(A) 12 12 10 10 8 8 6 6 4 4 180 2 2 IT(RMS)(A) TC(C) 0 0 0 2 4 6 8 10 12 Figure 3. On-state rms current versus ambient temperature (free air convection) 3.0 IT(RMS)(A) 0 25 50 75 100 125 150 Figure 4. Relative variation of thermal impedance versus pulse duration 1.0E+00 K = [Zth / Rth] Zth(j-c) 2.5 Zth(j-a) 2.0 1.5 1.0E-01 1.0 0.5 Ta(C) tp (s) 0.0 0 25 50 75 100 125 150 1.0E-02 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 DocID024572 Rev 3 3/9 Characteristics T1235T-8T Figure 5. On-state characteristics (maximum values) Figure 6. Surge peak on-state current versus number of cycles ITM(A) 100 100 ITSM(A) 90 Tjmax: Vt0 = 0.85 V Rd = 37 mW 80 t = 20 ms 70 One cycle Non repetitive Tj initial=25 C 60 50 10 40 30 20 VTM(V) Tj=25 C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1 4.0 Figure 7. Non repetitive surge peak on-state current and corresponding values of I2t 1000 Number of cycles 0 1 0.0 Repetitive TC=131 C 10 Tj=150 C 10 100 1000 Figure 8. Relative variation of gate trigger current and gate voltage versus junction temperature (typical values) ITSM(A), It (As) 2.0 IGT, VGT [Tj] / IGT, VGT [Tj = 25 C] Tj initial = 25 C IGT Q3 dl/dt limitation: 100 A / s 1.5 IGT Q1 - Q2 ITSM 100 VGT 1.0 It 0.5 10 tp(ms) sinusoidal pulse with width tp<10 ms 0.01 0.10 1.00 -50 10.00 Figure 9. Relative variation of static dV/dt immunity versus junction temperature (typical values) 5 TC(C) 0.0 dV/dt [Tj] / dV/dt [Tj = 150 C] -25 0 25 50 75 100 125 150 Figure 10. Relative variation of holding current and latching current versus junction temperature (typical values) 2.0 IH, IL[Tj] / IH, IL[Tj = 25 C] VD =VR= 402 V 4 1.5 3 1.0 2 IL 0.5 1 IH T j(C) Tj(C) 0.0 0 25 4/9 50 75 100 125 150 -50 DocID024572 Rev 3 -25 0 25 50 75 100 125 150 T1235T-8T Characteristics Figure 11. Relative variation of critical rate of decrease of main current (dI/dt)c versus reapplied (dV/dt)c 4 (dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c Figure 12. Relative variation of critical rate of decrease of main current (dI/dt)c versus junction temperature (typical values) (dl/dt)c [Tj] / (dl/dt)c [Tj = 150 C] 9 8 7 3 6 5 2 4 3 1 2 1 (dV/dt)c (V/s) Tj(C) 0 0 0.1 1.0 10.0 100.0 25 50 75 100 125 150 Figure 13. Relative variation of leakage current versus junction temperature for different values of blocking voltage (typical values) 1.0E+00 IDRM, IRRM [Tj; VDRM, VRRM] / IDRM, IRRM VDRM = VRRM = 800 V 1.0E-01 VDRM = VRRM = 600 V VDRM = VRRM = 400 V 1.0E-02 [Tj=125 C; 800 V] [Tj=150 C; 600 V] 1.0E-03 Tj(C) 1.0E-04 25 50 75 100 DocID024572 Rev 3 125 150 5/9 Package information 2 T1235T-8T Package information * Epoxy meets UL94, V0 * Lead-free package * Recommended torque: 0.4 to 0.6 N*m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. Figure 14. TO-220AB dimension definitions A E P Resin gate 0.5 mm max. protrusion(1) F Q H1 D D1 L30 L20 b1 J1 L1 L b e e1 Resin gate 0.5 mm max. protrusion(1) (1) Resin gate position accepted in each of the two position shown as well as the symmetrical opposites 6/9 DocID024572 Rev 3 c T1235T-8T Package information Table 6. TO-220AB dimension values Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.17 0.18 b 0.61 0.88 0.024 0.035 b1 1.14 1.70 0.045 0.067 c 0.48 0.70 0.019 0.027 D 15.25 15.75 0.60 0.62 D1 1.27 typ. 0.05 typ. E 10 10.40 0.39 0.41 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.19 0.20 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.24 0.26 J1 2.40 2.72 0.094 0.107 L 13 14 0.51 0.55 L1 3.50 3.93 0.137 0.154 L20 16.40 typ. 0.64 typ. L30 28.90 typ. 1.13 typ. P 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 DocID024572 Rev 3 7/9 Ordering information 3 T1235T-8T Ordering information Figure 15. Ordering information scheme T 12 35 T - 8 T Triac Current 12 = 12 A Gate sensitivity 35 = 35 mA Specific application T = Increased (dI/dt)c and dV/dt producing reduced ITSM Voltage (VDRM, VRRM) 8 = 800 V Package T = TO-220AB Table 7. Ordering information 4 Order code Marking Package Weight Base qty Delivery mode T1235T-8T T1235T-8T TO-220AB 2.0 g 50 Tube Revision history Table 8. Document revision history 8/9 Date Revision Changes 05-Aug-2013 1 Initial release. 01-Jul-2014 2 Updated Table 2. 28-Jul-2014 3 Updated Table 5. DocID024572 Rev 3 T1235T-8T IMPORTANT NOTICE - PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. 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