SKCD 18 C 120 I3
© by SEMIKRON Rev. 0 – 18.02.2010 1
CAL-DIODE
SKCD
IF = 25 A
VRRM = 1200 V
Size: 4,2 mm x 4,2 mm
SKCD 18 C 120 I3
Features
• low forward voltage drop combined
with a low temperature dependence
• easy paralleling due to a small forward
voltage spread
• very soft recovery behavior
• small switching losses
• high ruggedness
• compatible to thick wire bonding
• compatible to all standard solder
processes
Typical Applications*
• freewheeling diode for IGBT
• particularly suitable for frequencies > 8
kHz
Absolute Maximum Ratings
Symbol Conditions Values Unit
VRRM Tj=25°C, I
R=0.1mA 1200 V
IF(AV) Ts=80°C, T
j= 150 °C 18 A
IFSM 10 ms
sin 180°
Tj=25°C 230 A
Tj= 150 °C 180 A
Tjmax 150 °C
Electrical Characteristics
Symbol Conditions min. typ. max. Unit
i2tTj= 150 °C, 10 ms, sin 180° 162 A2s
IRTj=25°C, V
RRM = 1200 V 0.10 mA
Tj= 125 °C, VRRM =1200V 2.00 mA
VFTj=25°C, I
F=15A 2.00 2.50 V
Tj= 125 °C, IF=15A 1.79 2.30 V
V(TO) Tj= 125 °C 1.18 V
rTTj= 125 °C 36.7 mΩ
Dynamic Characteristics
Symbol Conditions min. typ. max. Unit
trr Tj= 25 °C, 15 A, 600 V, 400 A/µs µs
trr Tj= 125 °C, 15 A, 600 V, 400 A/µs ns
Qrr Tj= 25 °C, 15 A, 600 V, 400 A/µs 1.5 µC
Qrr Tj= 125 °C, 15 A, 600 V, 400 A/µs 2.7 µC
Irrm Tj= 25 °C, 15 A, 600 V, 400 A/µs A
Irrm Tj= 125 °C, 15 A, 600 V, 400 A/µs 16 A
Thermal Characteristics
Symbol Conditions min. typ. max. Unit
Tj-40 150 °C
Tstg -40 150 °C
Tsolder 10 min. 250 °C
Tsolder 5 min. 320 °C
Rth(j-s)
sold. on 0,38 mm DCB, reference point
on copper heatsink close to the chip 1.47 K/W
Mechanical Characteristics
Symbol Conditions Values Unit
Raster
size 4.2 x 4.2 mm2
Area total 17.64 mm2
Anode bondable (Al)
Cathode solderable (Ag/Ni)
Wire bond Al, diameter ≤ 500 µm
Package wafer frame
Chips /
Package 578 (5" Wafer) pcs