ky SGS-THOMSON MICROELECTROMICS STP2NA50 STP2NA50FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss Ros(on) Ib STP2NA50 500 V <4Q 2.8A ST P2NAS5OF | 500 V <4 2A TYPICAL Rosg(on) = 3.25 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED APPLICATIONS a MEDIUM CURRENT, HIGH SPEED SWITCHING a SWITCH MODE POWER SUPPLIES (SMPS8) + 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE DATA AT 100C REDUCED THRESHOLD VOLTAGE SPREAD a CONSUMER AND INDUSTRIAL LIGHTING ABSOLUTE MAXIMUM RATINGS PRELIMINARY DATA ISOWATT220 INTERNAL SCHEMATIC DIAGRAM D(z) 61) 53) sco6140 Symbol Parameter Value Unit STP2NA50 STP2NASOFI Vbs Drain-Source Valtage (Vgs = 0) 500 Vv VocrR Drain-Gate Voltage (Rgs = 20 KO) 500 Vv Ves Gate-Source Voltage + 30 V ID Drain-Current (continuous) at Te = 25C 2.8 2 A ID Drain-Current (continuous) at Te = 100C 1.8 1.25 A lom(*) |Drain-Current (Pulsed) 11.2 11.2 A Prot Total Dissipation at T, = 25C 75 35 Ww Derating Factor 0.6 0.28 Wc Viso Insulation Withstand Voltage (DC) 4000 Vv Tsig Storage Temperature -65 to 150 C Tj Max Operating Junction Temperature 150 C (*)Pulse width limited by sate operating area March 1996 146STP2NA5OFI THERMAL DATA T0220 ISOWATT220 Rihj-case |Thermal Resistance Junction-case Max 1.87 3.57 C/W Rinj-amo =| Thermal Resistance Junction-ambient Max 62.5 C/W Rihc-sink | Thermal Resistance Case-sink Typ 0.5 C/W TI Maximum Lead Temperature For Soldering Purpose 300 C AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit lAR Avalanche Current, Repetitive or Not-Repetitive 2.8 A (pulse width limited by T; max, 5 < 1%) Eas Single Pulse Avalanche Energy 42 mJ istarting Tj = 25 C, Ip = lar, Vop = 50 V) Ear Repetitive Avalanche Energy 1.6 mu (pulse width limited by T; max, 8 < 1%) lAR Avalanche Current, Repetitive or Not-Repetitive 1.8 A {Te = 100 C, pulse width limited by Tj max, 6< 1%) ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specitied) OFF Symbol Parameter Test Conditions Min. Typ. | Max. Unit Viprjpss | Drain-source Ip = 250 pA Ves =0 500 Vv Breakdown Voltage Ipss Zero Gate Voltage Vos = Max Rating 250 pA Drain Current (Veg = 0) | Vps = Max Rating x 0.8 T,= 125C 1000 pA lass Gate-Source Leakage |Ves =130V 100 mA Current (Vps = 0) ON (*) Symbol Parameter Test Conditions Min. Typ. | Max. Unit Vaseh) Gate Threshold Voltage | Vps = Vas In= 250 pA 2.25 3 3.75 Vv Ros(on) | Static Drain-source On |Ves=10V Ip=14A 3.25 4 Q Resistance Ves=10V Ip=14A Te = 100C 8 Q IDgon) On State Drain Current | Vps > IDgon) x Rostanj}max 2.8 A Ves =10 V DYNAMIC Symbol Parameter Test Conditions Min. Typ. | Max. Unit Gis (*) Forward Vos > Ipron) * Rosen) max Ip=14A 0.8 2 $ Transconductance Ciss Input Capacitance Vpops=25V f=1 MHz Ves = 0 300 400 pF Coss Output Capacitance 55 70 pF Crss Reverse Transfer 15 20 pF Gapacitance 2/6 AYP csouscreonesSTP2NA50/Fl ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. | Typ. | Max. Unit tafon} Turn-on Time Vpp = 250 V IDpsail4aA 7 10 ns tr Rise Time Re= 479 Ves = 10V 8 11 ns (difdt)on |Turn-on Current Slope | Vpp = 400 V IDp=2.8A 350 A/us Re = 47 2 Ves =10V Qg Total Gate Charge Vop =400 V Ip=2.8A Vag=10V 18 25 nc Qgs Gate-Source Charge 5.5 nc Qga Gate-Drain Charge 7 nc SWITCHING OFF Symbol Parameter Test Conditions Min. | Typ. | Max. Unit trevott) Off-valtage Rise Time |Vpp = 400 V Ip=2.8A 7 10 ns ti Fall Time Re= 4.72 Ves =10V 7 10 ns te Cross-over Time 14 20 ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. | Typ. | Max. Unit Isp Source-drain Current 2.8 A Ispom(*) | Source-drain Current 11.2 A (pulsed) Vsp (*) |Forward On Voltage Isp = 2.8 A Ves = 0 1.6 Vv trr Reverse Recovery Isp = 2.8 A di/dt = 100 A/us 380 ns Time Vop = 100 V T, = 150C Qrr Reverse Recovery 4.4 uc Charge IRRM Reverse Recovery 23 A Current (*) Pulsed: Pulse duration =300 us, duty cycle 1.5 % (*) Pulse width limited by safe operating area 3/6 is SGS-THOMSON Y/ isicrosecrroniesSTP2NA5OFI TO-220 MECHANICAL DATA AIG AYP GicsousceonesSTP2NA50/Fl ISOWATT220 MECHANICAL DATA D L2 L4 a a PO11G 5/6 AYP GicsousceonesSTP2NA5OFI Information furnishedis believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsabiliy for the consequences of use of such information nor for any infringemert of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSCON Microelectronics products are not authorized for use as critical comporents in life supportdevices or systems without express written approval of SGS-THOMSON Microslectonics. 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta- Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 6/6 AYP Gicsousceones