SILICON DIODES Variable Capacitance Tuning Diodes Max. Max. Nominal VR Ip Cy* at Typical Min. Max. at BO0v Vp=4y, f=1MHz C2/Cr00% Q Prott Jedec | Outline Type volts uA pF at f=1MHz at Vp=4v, f=50MHz mw Outline | Drawing Comments BBY17 100 0.2 6:8 76 100 500 DO-7 bs BBY18 100 0-2 10 77 100 500 DO-7 ps Designed for VHF BBY19 100 0-2 16 7-9 100 500 BO-7 bs and UHF BBY20 100 0.2 22 8-2 100 500 DO-7 D8 | [electronic tuning BBY21 100 0:2 33 8-2 7400 500 DO-7 D8 applications BBY22 100 0-2 47 8-0 100 500 DO-14 DS *+20% tolerance +Derate to zero at +175C. +Ratio Capacitance at 2V_ Capacitance at 100V Max. Nominal Max, Ip at Cr* at Min. Min. Max. Ve Vra=25v Va=4v, f=1MHz C2/C30t a Proct Jedec | Outline Type volts HA pF at f=MHz at Vp=4v, f=50MHz mw Outline | Drawing Comments ZC700 30 -02 6-8 2-8 500 400 DO-7 Ds zc701 30 02 8-2 2:8 500 400 DO-7 D8 ZC702 30 02 10-0 2-8 500 400 DO-7 D8 20703 30 02 12-0 3-0 450 400 DO-7 D8 ZC704 30 -02 15.0 3-0 450 400 DO-7 D8 ZC705 30 02 18-0 3-2 450 400 DO-7 D8 Designed for VHF ZC706 30 -02 22-0 3-2 400 400 DO-7 DB Md OME or ZC707 30 02 27-0 3-2 400 400 DO-7 Ds ae ic tuni 2C708 30 -02 33-0 3-2 400 400 DO-7 DB peal uning ZC709 30 -02 39-0 3.2 350 400 DO-7 D8 applications ZC710 30 02 47.0 3-2 350 400 DO-7 b8 ZC711 30 -02 56-0 3-2 300 400 DO-7 Ds ZC712 30 02 68-0 3-2 300 400 DO-7 Ds 2C713 30 02 82-0 3.2 250 400 DO-7 D8 ZC714 30 02 100-0 3-2 250 400 DO-14 oo |} . 3 mest Capacitance at 2V 410% tolerance +Derate to zero at +175C. tRatio Capacitance at 30V at 30V Variabl i iod _ ariable Capacitance Diodes Max. Max. Ip at Cj* at Min. f at Max. Tstc and opt VR Vp=4v Vr=0, f=1MHz Va=6v, f=9-3GHz Prot t Outline Type volts pA | pF GHz m c Drawing Comments ZC29 6 0.1 0.28-0-55 200 60 -40 to+150 EorG ZC30 6 0-1 0-55-1-10 175 60 40 to+150 EorG Designed for 2C31 6 0-1 1-10-2-2 125 400 40 to+150 EorG parametric ampli- ZC32 6 0-1 2-20-4-4 100 150 40 to+150 EorG |}iers, frequency Z2C200 6 0-1 0-25-0-5 300 60 -40 to+150 EorG || multipliers and Z2C201 6 0-1 0.25-0-5 400 60 40 to+150 EorG ||limiters ZC202 6 0-1 0-25-0-5 500 60 ~40 to+150 EorG *Pairs of diodes may be supplied with capacitance matched to 10%. tDerate to zero at +150C Diodes can be supplied to a specified capacitance value +10%. P.I.N. Diodes Min. Min. Max. Max. Effective Minority BVp at Crore at Rg at Carrier Lifetime Max, Outline 10pA Vp=50v Ip=100mA Ip=50mA Prot TstG and opt | Drawing Type volts pF ohms ns Ww c Comments Designed for use ZC3001 150 0-30 1-5 100 0-250 40 to+175 K in signal ZC3002 200 0-250 1-5 100 0-250 40 to+175 K conditioning and 2C3201 150 0-35 1-5 100 3-0 40 to+175 E control appli- ZC3202 200 0:32 1-5 100 3-0 40 to+175 E cation at micro- wave frequencies Hot Carrier Diod Power Max. Forward Breakdown Reverse Leakage Forward Forward Capacitance Effective Minority Dissipation Current Voltage Current Voltage Vr; Voltage Vr2 Cro) Carrier Lifetime Type No. Prot (Continuous) atip=10LA at Vp=50V at Ipp=ImMA at Ipg=I5mA at VF=O at lp=15mA (mW) (mA) (volts) (nA) (volt) (volt) (pF) (pS) ZC2800 300 400 60 200 0-45 1:90 2-0 100 E-Line package (see D24 inside back cover). 26