AAT8107
20V P-Channel Power MOSFET
8107.2005.05.1.1 1
General Description
The AAT8107 low threshold 20V, P-channel MOS-
FET is a member of AnalogicTech's TrenchDMOS
product family. Using an ultra-high density propri-
etary TrenchDMOS technology, the AAT8107 is
designed for use as a load switch in battery-pow-
ered applications and protection in battery packs.
Applications
• Battery Packs
• Battery-Powered Portable Equipment
Features
•V
DS(MAX) = -20V
•I
D(MAX)1= -6.5A @ 25°C
• Low RDS(ON):
• 35mΩ@ VGS = -4.5V
• 60mΩ@ VGS = -2.5V
SOP-8L Package
DDDD
SSSG
Top View
1234
8765
Absolute Maximum Ratings
TA= 25°C, unless otherwise noted.
Thermal Characteristics
Symbol Description Value Units
RθJA Typical Junction-to-Ambient Steady State180
RθJA2 Maximum Junction-to-Ambient t<10 Seconds150 °C/W
RθJF Typical Junction-to-Foot127
Symbol Description Value Units
VDS Drain-Source Voltage -20 V
VGS Gate-Source Voltage ±12
IDContinuous Drain Current @ TJ=150°C1TA= 25°C ±6.5
TA= 70°C ±5.2 A
IDM Pulsed Drain Current2±32
ISContinuous Source Current (Source-Drain Diode)1-1.7
PDMaximum Power Dissipation1TA= 25°C 2.5 W
TA= 70°C 1.6
TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 °C
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 10-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however,
RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2. Pulse test: Pulse Width = 300µs.
TrenchDMOS™
AAT8107
20V P-Channel Power MOSFET
28107.2005.05.1.1
Electrical Characteristics
TJ= 25°C, unless otherwise noted.
Symbol Description Conditions Min Typ Max Units
DC Characteristics
BVDSS Drain-Source Breakdown VGS = 0V, ID= -250µA -20 V
Voltage
RDS(ON) Drain-Source On-Resistance1VGS = -4.5V, ID= -6.5A 27 35 mΩ
VGS = -2.5V, ID= -5.0A 46 60
ID(ON) On-State Drain Current1VGS = -4.5V, VDS = 5V (Pulsed) -32 A
VGS(th) Gate Threshold Voltage VGS = VDS, ID= -250µA -0.6 V
IGSS Gate-Body Leakage Current VGS = ±12V, VDS = 0V ±100 nA
IDSS Drain Source Leakage VGS = 0V, VDS = -20V -1 µA
Current VGS = 0V, VDS = -16V, TJ= 70°C -5
gfs Forward Transconductance1VDS = -5V, ID= -6.5A 12 S
Dynamic Characteristics2
QGTotal Gate Charge VDS = -15V, RD= 2.3Ω, VGS = -4.5V 13.6
QGS Gate-Source Charge VDS = -15V, RD= 2.3Ω, VGS = -4.5V 2.3 nC
QGD Gate-Drain Charge VDS = -15V, RD= 2.3Ω, VGS = -4.5V 5.5
tD(ON) Turn-On Delay VDS = -15V, RD= 2.3Ω, VGS = -4.5V, RG= 6Ω10
tRTurn-On Rise Time VDS = -15V, RD= 2.3Ω, VGS = -4.5V, RG= 6Ω35 ns
tD(OFF) Turn-Off Delay VDS = -15V, RD= 2.3Ω, VGS = -4.5V, RG= 6Ω38
tFTurn-Off Fall Time VDS = -15V, RD= 2.3Ω, VGS = -4.5V, RG= 6Ω50
Source-Drain Diode Characteristics
VSD Source-Drain Forward VGS = 0, IS= -6.5A -1.5 V
Voltage1
ISContinuous Diode Current3-1.7 A
1. Pulse test: Pulse Width = 300µs.
2. Guaranteed by design. Not subject to production testing.
3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 10-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however,
RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
Typical Characteristics
TJ= 25ºC, unless otherwise noted.
Threshold Voltage
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
-50 -25 0 25 50 75 100 125 150
TJ (°C)
VGS(th) Variance (V)
ID = 250µA
On-Resistance vs. Junction Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
-50 -25 0 25 50 75 100 125 150
T
J
(
°C
)
Normalized RDS(ON)
VGS = 4.5V
ID = 6.5A
On-Resistance vs. Gate-to-Source Voltage
0
20
40
60
80
100
120
012345
VGS (V)
RDS(ON) (mΩ)
ID = 6.5A
On-Resistance vs. Drain Current
0
10
20
30
40
50
60
024681012
ID (A)
RDS(ON) (mΩ)
VGS = 2.5V
VGS = 4.5V
Transfer Characteristics
0
8
16
24
32
012345
VGS (V)
ID (A)
VD = VG
125°C
25°C
-55°C
Output Characteristics
0
8
16
24
32
01234
VDS (V)
IDS (A)
1.5V
2V
3.5V
2.5V
5V
4.5V 4V
3V
AAT8107
20V P-Channel Power MOSFET
8107.2005.05.1.1 3
AAT8107
20V P-Channel Power MOSFET
48107.2005.05.1.1
Typical Characteristics
TJ= 25ºC, unless otherwise noted.
Transient Thermal Response, Junction to Ambient
0.01
0.1
1
1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02 1E+03
Time (s)
Normalized Effective
Transient Thermal
Impedance
Single Pulse
0.02
0.05
0.1
0.2
0.5
Single Pulse Power, Junction to Ambient
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100
Time (s)
Power (W)
Capacitance
0
400
800
1200
1600
2000
0 5 10 15 20
VDS (V)
Capacitance (pF)
Ciss
Coss
Crss
Source-Drain Diode Forward Voltage
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
VSD (V)
IS (A)
TJ = 150°C
TJ = 25°C
Gate Charge
0
1
2
3
4
5
03691215
QG, Charge (nC)
VGS (V)
VD = 15V
ID = 6.5A
Ordering Information
Package Information
SOP-8
All dimensions in millimeters.
0.175 ± 0.075 6.00 ± 0.20
3.90 ± 0.10
1.55 ± 0.20
1.27 BSC0.42 ± 0.09 × 8
4.90 ± 0.10
4° ± 4°
45°
0.375 ± 0.125
0.235 ± 0.045
0.825 ± 0.445
Package Marking Part Number (Tape and Reel)1
SOP-8 8107 AAT8107IAS-T1
AAT8107
20V P-Channel Power MOSFET
8107.2005.05.1.1 5
1. Sample stock is generally held on all part numbers listed in BOLD.
AAT8107
20V P-Channel Power MOSFET
68107.2005.05.1.1
Advanced Analogic Technologies, Inc.
830 E. Arques Avenue, Sunnyvale, CA 94085
Phone (408) 737-4600
Fax (408) 737-4611
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other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
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