AAT8107
20V P-Channel Power MOSFET
28107.2005.05.1.1
Electrical Characteristics
TJ= 25°C, unless otherwise noted.
Symbol Description Conditions Min Typ Max Units
DC Characteristics
BVDSS Drain-Source Breakdown VGS = 0V, ID= -250µA -20 V
Voltage
RDS(ON) Drain-Source On-Resistance1VGS = -4.5V, ID= -6.5A 27 35 mΩ
VGS = -2.5V, ID= -5.0A 46 60
ID(ON) On-State Drain Current1VGS = -4.5V, VDS = 5V (Pulsed) -32 A
VGS(th) Gate Threshold Voltage VGS = VDS, ID= -250µA -0.6 V
IGSS Gate-Body Leakage Current VGS = ±12V, VDS = 0V ±100 nA
IDSS Drain Source Leakage VGS = 0V, VDS = -20V -1 µA
Current VGS = 0V, VDS = -16V, TJ= 70°C -5
gfs Forward Transconductance1VDS = -5V, ID= -6.5A 12 S
Dynamic Characteristics2
QGTotal Gate Charge VDS = -15V, RD= 2.3Ω, VGS = -4.5V 13.6
QGS Gate-Source Charge VDS = -15V, RD= 2.3Ω, VGS = -4.5V 2.3 nC
QGD Gate-Drain Charge VDS = -15V, RD= 2.3Ω, VGS = -4.5V 5.5
tD(ON) Turn-On Delay VDS = -15V, RD= 2.3Ω, VGS = -4.5V, RG= 6Ω10
tRTurn-On Rise Time VDS = -15V, RD= 2.3Ω, VGS = -4.5V, RG= 6Ω35 ns
tD(OFF) Turn-Off Delay VDS = -15V, RD= 2.3Ω, VGS = -4.5V, RG= 6Ω38
tFTurn-Off Fall Time VDS = -15V, RD= 2.3Ω, VGS = -4.5V, RG= 6Ω50
Source-Drain Diode Characteristics
VSD Source-Drain Forward VGS = 0, IS= -6.5A -1.5 V
Voltage1
ISContinuous Diode Current3-1.7 A
1. Pulse test: Pulse Width = 300µs.
2. Guaranteed by design. Not subject to production testing.
3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 10-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however,
RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.