SIEMENS GaAs FET CLY 2 Datasheet *Power amplifier for mobile phones *For frequencies up to 3 GHz * Operating voltage range: 2 to6 V * Pou at V,=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better 55 % ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code Pin Configuration Package 1) (taped) 1 2 3 4 5 6 CLY 2 v2 Q62702-L96 G s D D Ss G MW 6 Maximum ratings Symbol Unit Drain-source voltage Vos. 9 V Drain-gate voltage VpG 12 Vv Gate-source voltage Ves -6 Vv Drain current Ip 600 mA Channel temperature Toh 150 C Storage temperature Tstg -55...4150 C Total power dissipation (Tg < 50C) 2) Prot 900 mw Thermal Resistance Channel-soldering point 2) Rihchs <110 K/W 1) Dimensions see chapter Package Outlines 2) Tg is measured on the source lead at the soldering point to the pcb. Semiconductor Group 1637 12.96SIEMENS GaAs FET CLY 2 Electrical characteristics (Tq = 25C , unless otherwise specified) Characteristics Symbol | min typ max Unit Drain-source saturation current lpss 300 450 650 mA Vps=3 V Vas =0V Drain-source pinch-off current !D(p) - 5 50 pA Vops=3V Veg=-3.8V Gate pinch-off current IG(p) > 5 20 pA Vps=3V Veg=-3.8V Pinch-off Voltage VGS(p) | -38 -2.8 -1.8 Vv Vos=3V ip=50HA Small Signal Gain ) G - 15.5 - dB Vpopg=3V ip=180mA f = 1.8GHz Pig = -5 dBm Small Signal Gain ) G - 14.5 - dB Vpg=3V ip=180mA ff =1.8 GHz Pin = -5 dBm Output Power Po 22.5 23.5 dBm Vps=3V ip=180mA f=1.8 GHz Pin = 10 dBm 1dB-Compression Point PidB - 23.5 - dBm Vpg=3V ip=180mA_ f = 1.8GHz 1dB-Compression Point PidB - 27.0 - dBm Vpg=5V Ip=180mA_ f =1.8GHz Power Added Efficiency PAE - 55 - % Vpg=3V ip=180mA_ f= 1.8 GHz Pin = 10 dBm ) Matching conditions for maximum small signal gain ( not identical with power matching conditions ! ) ) Power matching conditions: { = 1.8 GHz Source Match: ns: MAG = 0.74, ANG 132; Load Match: Ti ;MAG 0.61, ANG -153 Semiconductor Group 1638 12.96SIEMENS GaAs FET CLY 2 tout Chara isti . VGS<0V = VGS=-0.5V VGs=-1 Draincurrent [A] = MS en VES SV VGS=-2V NGS=25Y, 2 3 4 5 6 7 Drain-Source Voltage [V] Compression Power vs. Drain-Source Voltage f = 1.8GHz; Ip = 0.5IDSS P1dB Np . [dBm] [eel | | 35 70 ! 30 cop eg 60 25 al 50 20 e 40 15 s | 30 10 | - 20 5 10 0 0 o 141 #2 3 4 = 5f{V]6 Drain-Source Voitage -__---> Semiconductor Group 1639 12.96SIEMENS GaAs FET CLY 2 typ. Common Source S-Parameters Vps=3V = Ip=180mA Zo = 500 f GHZ $11 $21 $12 $22 0.100 0.99 -12.0 9.17 171.6 0.007 833 0.15 -16.6 0.150 0.99 -17.9 9.11 167.4 0.011 808 016 -24.2 0.200 0.98 -23.7 9.01 163.4 0.014 77.6 0.16 -31.2 0.250 0.97 -29.5 8.89 159.3 0.017 74.7 O16 -39.0 0.300 0.96 -35.1 8.75 155.4 0.021 72.4 0.16 -45.9 0.400 0.94 -46.0 8.40 147.8 0.026 67.0 0.17 -58.2 0.500 0.92 -56.4 8.03 140.7 0.031 62.5 0.18 -69.2 0.600 0.89 -66.2 7.61 134.1 0.036 58.0 0.18 -79.0 0.700 0.86 -75.4 7.22 128.0 0.039 544 0.19 -87.0 0.800 0.84 = =-84.1 6.82 122.3 0.043 51.2 0.20 -94.2 0.900 0.82 -92.1 6.45 117.2 0.045 48.3 0.20 -100.4 1,000 0.80 -99.7 6.10 112.3 0.048 46.1 0.21 -105.3 1.200 0.77 -1136 545 103.6 0.052 41.8 0.22 -115.1 1.400 0.74 -125.9 492 95.8 0.055 38.6 0.23 -122.9 1.500 0.73 -131.5 4.71 92.1 0.056 37.2 0.23 -125.7 1.600 0.72 = -137.1 448 88.5 0.067 362 0.24 -129.4 1.800 0.72 -147.4 410 81.7 0.059 34.0 0.25 -135.0 2.000 0.71 -157.2 3.77 75.0 0.060 31.9 0.26 -139.7 2.200 0.71 -165.3 3.47 68.8 0.062 31.2 0.27 -143.0 2.400 0.71 -173.3 3.19 63.0 0.063 29.7 0.29 -147.2 2.500 0.71 -1774 3.06 60.1 0.063 28.9 0.29 -150.0 3.000 0.72 165.7 2.52 47.2 0.065 28.4 0.32 -159.7 3.500 0.74 8151.7 2.12 36.4 0.066 29.7. 0.36 -167.5 4.000 0.76 139.9 1.85 26.5 0.073 306 0.39 -173.1 4.500 0.78 127.4 1.61 15.3 0.078 28.2 042 179.2 5.000 0.79 116.7 143 4.6 0.085 240 045 174.3 5.500 0.80 106.3 1.23 -5.9 0.085. 20.9 0.49 167.8 6.000 0.83 97.1 106 -14.8 0.087 17.7 0.52 160.9 Additional S-Parameter available on CD Semiconductor Group 1640 12.96SIEMENS GaAs FET CLY 2 typ. Common Source S-Parameters Vpos=5V Ip=180mA Zy=502 f GHZ $11 $21 $12 $22 N MA M 0.100 0.99 -12.3 9.30 171.3 0.007 83.1 0.27 -10.8 0.150 0.99 -18.4 9.23 166.9 0.010 80.0 0.27 -158 0.200 0.98 -24.3 9.13 162.8 0.014 77.2 0.26 -204 0.250 0.97 -30.3 9.00 158.5 0.017 73.6 0.26 -25.7 0.300 0.96 -36.1 8.85 154.6 0.020 71.1 O26 -30.5 0.400 0.94 -47.2 8.48 146.7 0.026 65.8 026 -39.2 0.500 0.91 -57.8 8.08 139.4 0.030 61.0 0.25 -47.7 0.600 0.89 -67.8 7.64 132.6 0.034 563 0.25 = -55.4 0.700 0.86 -77.1 7.23 126.3 0.038 528 0.25 -62.2 0.800 0.84 -85.9 6.81 120.6 0.041 495 0.24 -68.6 0.900 0.81 -93.9 6.43 115.3 0.043 46.4 0.24 -74.1 1.000 0.80 -101.5 6.07. 110.4 0.045 442 0.24 -79.2 1.200 0.76 = -115.4 5.40 101.4 0.048 40.1 0.24 -88.8 1.400 0.74 = =-127.6 487 93.6 0.051 36.9 0.24 -96.8 1.500 0.73 =-133.2 465 89.8 0.052 35.6 0.24 -100.2 1.600 0.72 -138.8 4.42 86.1 0.052 346 0.24 -103.9 1.800 0.72 -149.0 4.04 79.2 0.054 32.7 0.25 -110.4 2.000 0.71 = =-158.6 3.71 72.3 0.054 30.9 0.26 -116.2 2.200 0.71 = -166.6 3.41 66.1 0.055 309 0.27 -120.4 2.400 0.71 = -174.5 3.13 60.1 0.056 299 0.28 -125.6 2.500 0.71 -178.5 3.00 57.1 0.056 29.4 0.29 -129.1 3.000 0.73 164.9 2.47 43.9 0.057 30.8 0.32 -140.6 3.500 0.75 151.1 2.07 32.5 0.059 34.3 0.35 -150.6 4.000 0.77 139.4 1.80 22.1 0.067 36.7 0.40 -1582 4,500 0.78 126.9 156 105 0.074 34.7 0.43 -167.6 5.000 0.79 116.1 1.37 -06 0.082 30.2 047 -174 5.500 0.81 105.6 1.18 -11.6 0.083 26.7 0.51 178 6.000 0.84 96.3 1.00 -20.8 0.086 229 0.54 169.6 Additional S-Parameter available on CD Semiconductor Group 1641 12.96SIEMENS GaAs FET CLY 2 Total Power Dissipation Prot = f(Ts) Permissible Pulse Load Ptotmax/PtotDc = ftp) ia Poot_nax Prot BC Semiconductor Group 1642 12.96SIEMENS GaAs FET CLY 2 CLY2 Power GaAs-FET Matching Conditions IN. | Matching oO, Matching | ouT Definition: Pms giy soo Tm Measured Data: Typ f Vbs Ip P-1dB Gain T'ms I'ms Tmt Tm [GHz] [V] [mA] [dBm (dB) MAG = ANG MAG ANG CLY2 0.9 3 175 22.8 15.7 0.49 75 0.42 -165 5 175 25.8 16.5 0.52 75 0.22 172 6 175 26.9 16.9 0.50 76 0.21 -156 15 5 175 25.8 16.1 0.68 106 0.42 143 6 175 26.9 16.9 0.76 113 0.34 139 18 2 175 19.0 15.0 0.75 130 0.52 171 3 175 22.8 15.4 0.70 425 0.45 -172 4 175 24.5 15.6 0.75 134 0.41 166 5 175 25.8 15.7 0.72 131 0.38 163 6 175 26.8 16.0 0.72 135 0.35 155 24 3 175 21.5 13.0 0.70 158 0.46 179 5 175 26.1 13.0 0.67 152 0.36 -178 Note: Gain is small signal gain @ Fy), and Ty Semiconductor Group 1643 12.96