Semiconductor Group 1
NPN Silicon Darlington Transistors BC 875
… BC 879
5.91
Maximum Ratings
Type Ordering CodeMarking Package1)
Pin Configuration
BC 875
BC 877
BC 879
C62702-C853
C62702-C854
C62702-C855
– TO-92
E C B
1 2 3
1) For detailed information see chapter Package Outlines.
2) If transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm ×10 mm large copper area for
the collector terminal, RthJA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C.
3) Mounted on Al heat sink 15 mm ×25 mm ×0.5 mm.
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 V
Peak collector current ICM
Collector current ICA
Junction temperature Tj˚C
Total power dissipation, TC = 90 ˚C2) Ptot W
Storage temperature range Tstg
Collector-base voltage VCB0
Thermal Resistance
Junction - ambient2) Rth JA ≤ 156 K/W
1
2
0.8 (1)
150
– 65 … + 150
Emitter-base voltage VEB0
Base current IBmA100
45 60
60 80
BC 875 BC 877
Peak base current IBM 200
80
100
BC 879
5
Junction - case3) Rth JC ≤ 75
●High current gain
●Low collector-emitter saturation voltage
●Complementary types: BC 876, BC 878
BC 880 (PNP)
Semiconductor Group 2
BC 875
… BC 879
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
DC current gain
IC = 150 mA; VCE = 10 V1)
IC = 500 mA; VCE = 10 V1)
VCollector-emitter breakdown voltage
IC = 50 mA BC 875
BC 877
BC 879
V(BR)CE0
45
60
80
–
–
–
–
–
–
nA
µA
Collector cutoff current
VCB = VCBmax
VCB = VCBmax,TA = 150 ˚C
ICB0 –
––
–100
20
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Collector-base breakdown voltage
IC = 100 µABC 875
BC 877
BC 879
V(BR)CB0
60
80
100
–
–
–
–
–
–
Emitter-base breakdown voltage, IE = 100 µAV(BR)EB0 5––
–hFE 1000
2000 –
––
–
Base-emitter saturation voltage1)
IC = 1 A; IB = 1 mA VBEsat – – 2.2
nAEmitter cutoff current, VEB = 4 V IEB0 – – 100
MHzTransition frequency
IC = 200 mA, VCE = 5 V, f = 20 MHz fT– 150 –
AC characteristics
V
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 0.5 mA
IC = 1 A, IB = 1 mA
VCEsat –
––
–1.3
1.8
nACollector cutoff current
VCE = 0.5 ×VCEmax
ICE0 – – 500
1) Pulse test: t≤300 µs, D≤ 2%.
Semiconductor Group 3
BC 875
… BC 879
Total power dissipation Ptot =f(TA;TC)
Permissible pulse load RthJA =f(tp)
Collector cutoff current ICB0 =f(TA)
VCB = 100 V
DC current gain hFE =f(TA)
VCE = 10 V
Semiconductor Group 4
BC 875
… BC 879
DC current gain hFE =f(IC)
VCE = 10 V, TA = 25 ˚C
Collector-emitter saturation voltage
VCEsat =f(IC)
Parameter = IB,TA = 25 ˚C
Transition frequency fT=f(IC)
VCE = 5 V, f = 20 MHz
Base-emitter saturation voltage
VBEsat =f(IC)
Parameter = IB,TA = 25 ˚C
