MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 is a Preferred Device Driver Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO MMBTA55 MMBTA56 Collector-Base Voltage -60 -80 VCBO MMBTA55 MMBTA56 Emitter-Base Voltage Collector Current - Continuous COLLECTOR 3 Vdc 1 BASE Vdc -60 -80 VEBO -4.0 Vdc IC -500 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3 1 2 SOT-23 CASE 318 STYLE 6 MARKING DIAGRAMS 2H X 2GM X MMBTA55LT1 MMBTA56LT1 2H, 2GM = Specific Device Code X = Date Code ORDERING INFORMATION Device Package Shipping MMBTA55LT1 SOT-23 3000/Tape & Reel MMBTA55LT3 SOT-23 10,000/Tape & Reel MMBTA56LT1 SOT-23 3000/Tape & Reel MMBTA56LT3 SOT-23 10,000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2002 May, 2002 - Rev. 2 1 Publication Order Number: MMBTA55LT1/D MMBTA55LT1, MMBTA56LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit -60 -80 - - V(BR)EBO -4.0 - Vdc ICES - -0.1 Adc - - -0.1 -0.1 100 100 - - OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 3) (IC = -1.0 mAdc, IB = 0) V(BR)CEO Vdc MMBTA55 MMBTA56 Emitter-Base Breakdown Voltage (IE = -100 Adc, IC = 0) Collector Cutoff Current (VCE = -60 Vdc, IB = 0) Collector Cutoff Current (VCB = -60 Vdc, IE = 0) (VCB = -80 Vdc, IE = 0) Adc ICBO MMBTA55 MMBTA56 ON CHARACTERISTICS DC Current Gain (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -100 mAdc, VCE = -1.0 Vdc) hFE - Collector-Emitter Saturation Voltage (IC = -100 mAdc, IB = -10 mAdc) VCE(sat) - -0.25 Vdc Base-Emitter On Voltage (IC = -100 mAdc, VCE = -1.0 Vdc) VBE(on) - -1.2 Vdc fT 50 - MHz SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (Note 4) (IC = -100 mAdc, VCE = -1.0 Vdc, f = 100 MHz) 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. TURN-ON TIME VCC -1.0 V 5.0 s 100 +10 V 0 RL 100 OUTPUT 100 5.0 s tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits http://onsemi.com 2 RL OUTPUT * CS 6.0 pF 5.0 F 100 +40 V RB Vin * CS 6.0 pF 5.0 F VCC +VBB +40 V RB Vin tr = 3.0 ns TURN-OFF TIME f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) MMBTA55LT1, MMBTA56LT1 200 100 VCE = -2.0 V TJ = 25C 50 C, CAPACITANCE (pF) 100 70 50 30 -5.0 -7.0 -10 -20 -30 -50 -70 -100 Cobo 10 5.0 -0.1 -0.2 -200 -0.5 -1.0 -2.0 -5.0 -10 -20 Figure 2. Current-Gain -- Bandwidth Product Figure 3. Capacitance -50 -100 400 TJ = 125C VCE = -1.0 V h FE, DC CURRENT GAIN ts 200 tf VCC = -40 V IC/IB = 10 IB1 = IB2 TJ = 25C 10 -5.0 -7.0 -10 -20 -30 200 25C -55C 100 80 60 tr td @ VBE(off) = -0.5 V -50 -70 -100 -200 -300 40 -0.5 -1.0 -2.0 -500 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 4. Switching Time Figure 5. DC Current Gain -1.0 TJ = 25C -0.8 V, VOLTAGE (VOLTS) t, TIME (ns) 20 VR, REVERSE VOLTAGE (VOLTS) 300 20 30 IC, COLLECTOR CURRENT (mA) 1.0 k 700 500 30 Cibo 7.0 20 -2.0 -3.0 100 70 50 TJ = 25C 70 VBE(sat) @ IC/IB = 10 -0.6 VBE(on) @ VCE = -1.0 V -0.4 -0.2 0 -0.5 VCE(sat) @ IC/IB = 10 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) Figure 6. "ON" Voltages http://onsemi.com 3 -500 -500 -1.0 R VB , TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) MMBTA55LT1, MMBTA56LT1 TJ = 25C -0.8 IC = -100 mA IC = -50 mA IC = -250 mA -0.6 IC = -500 mA -0.4 -0.2 IC = -10 mA 0 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -0.8 -1.2 -1.6 -2.0 RVB for VBE -2.4 -2.8 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Collector Saturation Region Figure 8. Base-Emitter Temperature Coefficient http://onsemi.com 4 -500 MMBTA55LT1, MMBTA56LT1 INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT-23 SOT-23 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the SOT-23 is a function of the The melting temperature of solder is higher than the rated pad size. This can vary from the minimum pad size for temperature of the device. When the entire device is heated soldering to a pad size given for maximum power to a high temperature, failure to complete soldering within dissipation. Power dissipation for a surface mount device is a short time could result in device failure. Therefore, the determined by TJ(max), the maximum rated junction following items should always be observed in order to temperature of the die, RJA, the thermal resistance from the minimize the thermal stress to which the devices are device junction to ambient, and the operating temperature, subjected. TA. Using the values provided on the data sheet for the SOT-23 package, PD can be calculated as follows: * Always preheat the device. * The delta temperature between the preheat and soldering TJ(max) - TA PD = should be 100C or less.* RJA * When preheating and soldering, the temperature of the The values for the equation are found in the maximum leads and the case must not exceed the maximum ratings table on the data sheet. Substituting these values into temperature ratings as shown on the data sheet. When the equation for an ambient temperature TA of 25C, one can using infrared heating with the reflow soldering method, calculate the power dissipation of the device which in this the difference shall be a maximum of 10C. case is 225 milliwatts. * The soldering temperature and time shall not exceed 150C - 25C 260C for more than 10 seconds. PD = = 225 milliwatts 556C/W * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. The 556C/W for the SOT-23 package assumes the use of the recommended footprint on a glass epoxy printed circuit * After soldering has been completed, the device should be board to achieve a power dissipation of 225 milliwatts. allowed to cool naturally for at least three minutes. There are other alternatives to achieving higher power Gradual cooling should be used as the use of forced dissipation from the SOT-23 package. Another alternative cooling will increase the temperature gradient and result would be to use a ceramic substrate or an aluminum core in latent failure due to mechanical stress. board such as Thermal Clad. Using a board material such * Mechanical stress or shock should not be applied during as Thermal Clad, an aluminum core board, the power cooling. dissipation can be doubled using the same footprint. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 5 MMBTA55LT1, MMBTA56LT1 PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AH NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-03 AND -07 OBSOLETE, NEW STANDARD 318-08. A L 3 1 V B S 2 G C D H K J DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR http://onsemi.com 6 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 MMBTA55LT1, MMBTA56LT1 Notes http://onsemi.com 7 MMBTA55LT1, MMBTA56LT1 Thermal Clad is a registered trademark of the Bergquist Company. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800-282-9855 Toll Free USA/Canada http://onsemi.com 8 MMBTA55LT1/D