PNP Silicon Transistors PNP Silicon Planar Transistors for medium level switching Type Maximum ratings Characteristics at Tamb= 25C BVceo = BVcgo.s BVeewoo lcm Prot Pror heg(iOV/10mA) he gVeg/tc) Case Vv Vv Vv A w Ww (v/mA) BFx29.s TOS 60 60 5 0.6 0.6 > 50 50... 200 (10/50) ___ BFX 30 TOS 65 65 5 06 0.6 50... 200 (0.4/10) BFX 87 TOS 50 50 4 0.6 0.6 3 > 40 > 40 (10/150) BFxes TOS 40sSC 4 06 06 3 40 AO (10/150) PN 2904 _~Pllastic TOS 40 60 5 06 0.3 _- > 35 40... 120 (10/150) PN2905PlasticTOS. 40.~=~*~SOS*=<*<<<SCC*~ SCC 300 (10/150) 2N 2904 TOS ~ 40 60 5 0.6 0.6 2N 2904A TOS 60 60 5 i i 0.6 2N2905. =TO5 40 6 45S O06 O06 3 >75 100 ... 300 (10/150) 2N 2905A TOS 60 60 5 0.6 0.6 3 > 100 100 ... 300 (10/150} 2N 2906 TO 40 60 5 0.6 04 18 > 35 40... 120 (10/150) 2N 2906A TOW 60 60 5 0.6 0.4 1.8 > 40 40... 120 (10/150) -2N 2907s: TO18 40 60 5 0.6 04 1.8 > 75 100 ... 300 (10/150) 2N 2907A TO18 60 60 _s5 0.6 0.4 1.8 > 100 100 ... 300 {10/150} oO Tamb oe Derate linearly to 200C except PN 2904/5 (125C) Tease = 25 Type Characteristics at Tamb = 25C max Vog gapV max lopaQlV cg) min f7(20V/S0mA) Cob (10V) tp ts te at (Io) (150mA/15mA) nA (Vv) pF ns ns ns (mA) BFX 29 400 50 (50) +00 <i2)) BEX 30 400 50. (50) 100 <12 <40 <250 <50 100 BFX 87 400 50 (40) 100 <12 Bexes 400 80) 0 <12 = = = PN2904 400 20. (50) 200 <8 40 30 30 150 _PN 2905 400 20 (50) 200 <8 40 80 30 150 2N 2904400 -20 (50) s 200 <8 40 80 30 150 2N2904A 400. | 10 (50) 200 <8 40 80 30 150 2N 2905 400 20 (50) 200 <8 40 80 30 150 N2905A 400. 10 (50) ~ 200 <8 40 80 30 150 2N 2906 400 20 ~~ (50) 200 <8 40 80 30 150 2N2906A 400, ~C~C~C~~~= 10 (50) 200. <8 40 80 30 150 2N 2907 400 20. (50) 200 <g 40 80 30 150... 2N2907A 400 a 10 (50). 200 <3 40 80 30 150 31