PNP Silicon Transistors PNP Silicon Planar Transistors for medium level switching Type Maximum ratings Characteristics at Tamb= 25C BVceo = BVcgo.s BVeewoo lcm Prot Pror heg(iOV/10mA) he gVeg/tc) Case Vv Vv Vv A w Ww (v/mA) BFx29.s TOS 60 60 5 0.6 0.6 > 50 50... 200 (10/50) ___ BFX 30 TOS 65 65 5 06 0.6 50... 200 (0.4/10) BFX 87 TOS 50 50 4 0.6 0.6 3 > 40 > 40 (10/150) BFxes TOS 40sSC 4 06 06 3 40 AO (10/150) PN 2904 _~Pllastic TOS 40 60 5 06 0.3 _- > 35 40... 120 (10/150) PN2905PlasticTOS. 40.~=~*~SOS*=<*<<75 100 ... 300 (10/150) 2N 2905A TOS 60 60 5 0.6 0.6 3 > 100 100 ... 300 (10/150} 2N 2906 TO 40 60 5 0.6 04 18 > 35 40... 120 (10/150) 2N 2906A TOW 60 60 5 0.6 0.4 1.8 > 40 40... 120 (10/150) -2N 2907s: TO18 40 60 5 0.6 04 1.8 > 75 100 ... 300 (10/150) 2N 2907A TO18 60 60 _s5 0.6 0.4 1.8 > 100 100 ... 300 {10/150} oO Tamb oe Derate linearly to 200C except PN 2904/5 (125C) Tease = 25 Type Characteristics at Tamb = 25C max Vog gapV max lopaQlV cg) min f7(20V/S0mA) Cob (10V) tp ts te at (Io) (150mA/15mA) nA (Vv) pF ns ns ns (mA) BFX 29 400 50 (50) +00