VUB145-16NOXT 3~ Rectifier Standard Rectifier Module Brake Chopper VRRM = 1600 V VCES = 1200 V I DAV = 150 A I C25 = 155 A I FSM = 1100 A VCE(sat) = 2.05 V 3~ Rectifier Bridge + Brake Unit + NTC Part number VUB145-16NOXT Backside: isolated 10+11 12 13 19+20 NTC ~6+7 ~4+5 ~2+3 1 8+9 18 17 21+22 Features / Advantages: Applications: Package: E2-Pack Package with DCB ceramic Improved temperature and power cycling Planar passivated chips Very low forward voltage drop Very low leakage current NTC 3~ Rectifier with brake unit for drive inverters Isolation Voltage: 3600 V~ Industry standard outline RoHS compliant Soldering pins for PCB mounting Height: 17 mm Base plate: Copper internally DCB isolated Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130513c VUB145-16NOXT Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 1700 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 1600 V IR reverse current VR = 1600 V TVJ = 25C 100 A VR = 1600 V TVJ = 150C 2 mA TVJ = 25C 1.20 V 1.68 V 1.13 V VF IF = forward voltage drop min. 50 A typ. I F = 150 A IF = TVJ = 125 C 50 A I F = 150 A TC = 105C I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved V 150 A TVJ = 150 C 0.87 V d= for power loss calculation only Ptot 1.74 T VJ = 150 C 5.9 m 0.5 K/W K/W 0.10 TC = 25C 250 W t = 10 ms; (50 Hz), sine TVJ = 45C 1.10 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.19 kA t = 10 ms; (50 Hz), sine TVJ = 150 C 935 A t = 8,3 ms; (60 Hz), sine VR = 0 V 1.01 kA t = 10 ms; (50 Hz), sine TVJ = 45C 6.05 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 5.89 kAs TVJ = 150 C 4.37 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25C Data according to IEC 60747and per semiconductor unless otherwise specified 4.25 kAs 37 pF 20130513c VUB145-16NOXT Ratings Brake IGBT Symbol VCES Definition VGES Conditions min. max. 1200 Unit V max. DC gate voltage 20 V VGEM max. transient gate emitter voltage 30 V I C25 collector current TVJ = collector emitter voltage I C80 TC = 25C 155 A TC = 80 C 108 A 500 W 2.35 V Ptot total power dissipation VCE(sat) collector emitter saturation voltage VGE(th) gate emitter threshold voltage I C = 4 mA; VGE = V CE TVJ = 25C I CES collector emitter leakage current VCE = VCES ; V GE = 0 V TVJ = 25C I GES gate emitter leakage current VGE = 20 V TC = 25C Q G(on) total gate charge VCE = 600 V; VGE = 15 V; I C = 100 A t d(on) turn-on delay time I C = 100 A; VGE = 15 V TVJ = 25C 2.05 TVJ = 125C 2.35 TVJ = 125C tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area I CM typ. 25C inductive load 5.9 TVJ = 125C VGE = 15 V; R G = 6.8 short circuit safe operating area t SC short circuit duration VCE = 720 V; VGE = 15 V I SC short circuit current R G = 6.8 ; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink V 0.1 mA mA 0.1 nA 295 nC 70 ns 40 ns 250 ns 100 ns 8.5 mJ 11 mJ TVJ = 125C VCEK = 1200 V SCSOA 6.5 500 VCE = 600 V; IC = 100 A VGE = 15 V; R G = 6.8 5.4 V TVJ = 125C 300 A 10 s A 400 0.25 K/W K/W 0.10 Brake Diode VRRM max. repetitive reverse voltage TVJ = 25C 1200 V I F25 forward current TC = 25C 48 A TC = 80 C 32 A TVJ = 25C 2.75 V TVJ = 25C 0.25 mA TVJ = 125C 1 mA I F 80 VF forward voltage I F = 30 A IR reverse current VR = VRRM Q rr reverse recovery charge VR = I RM max. reverse recovery current -di F /dt = 400 A/s t rr reverse recovery time IF = R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink TVJ = 125C IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 600 V 30 A V 1.99 1.8 C 23 A 150 ns TVJ = 125C 0.9 K/W 0.10 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20130513c VUB145-16NOXT Package Ratings E2-Pack Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. max. 200 Unit A -40 125 C -40 150 C 6 Nm Weight MD 176 3 mounting torque d Spp/App d Spb/Apb VISOL typ. creepage distance on surface | striking distance through air terminal to terminal 6.0 mm terminal to backside 12.0 mm 3600 V 3000 V t = 1 second isolation voltage t = 1 minute g 50/60 Hz, RMS; IISOL 1 mA 2D Data Matrix XXXXXXXXXX yywwx Logo UL Part number Date Code Location Ordering Standard Part Number VUB145-16NOXT Marking on Product VUB145-16NOXT Delivery Mode Box Quantity 6 Code No. 510475 105 Temperature Sensor NTC Symbol Definition Conditions R 25 resistance TVJ = 25 B 25/50 temperature coefficient min. 4.75 typ. 5 3375 max. Unit 5.25 k K 104 R [ ] 103 Equivalent Circuits for Simulation I V0 R0 * on die level Rectifier Brake IGBT Brake Diode V 0 max threshold voltage 0.87 1.1 1.31 R 0 max slope resistance * 3.3 13.8 8 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved T VJ = 150 C 102 0 V m 25 50 75 100 TC [C] 125 150 Typ. NTC resistance vs. temperature Data according to IEC 60747and per semiconductor unless otherwise specified 20130513c VUB145-16NOXT Outlines E2-Pack Dimmensions w/o tolerances acc. DIN ISO 2768-T1-m 10+11 12 13 19+20 NTC ~6+7 ~4+5 ~2+3 1 8+9 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 18 17 21+22 Data according to IEC 60747and per semiconductor unless otherwise specified 20130513c VUB145-16NOXT Rectifier 200 10 4 900 TVJ = 125C TVJ = 25C 800 TVJ= 45C TVJ = 45C 150 IF IFSM 700 I2 t [A] 600 [A s] TVJ= 150C 100 [A] 2 50 TVJ = 150C 500 0 0.0 50Hz, 80% VRRM 0.5 1.0 1.5 400 0.001 2.0 0.01 VF [V] 0.1 10 3 1 1 2 t [s] Fig. 1 Forward current vs. voltage drop per diode 3 4 5 6 7 8 91 0 t [ms] 2 Fig. 2 Surge overload current vs. time per diode Fig. 3 I t vs. time per diode 140 RthA: 0.1 K/W 0.3 K/W 0.6 K/W 1.0 K/W 1.5 K/W 2.5 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 80 60 Ptot 40 DC = 1 0.5 0.4 0.33 0.17 0.08 120 100 IdAV 80 [A] 60 [W] 40 20 20 0 0 0 10 20 30 40 50 60 70 0 20 IdAVM [A] 40 60 80 100 120 140 160 0 25 50 Tamb [C] 75 100 125 150 TC [C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 0.6 0.5 Constants for ZthJC calculation: 0.4 ZthJC 0.3 i Rth (K/W) ti (s) [K/W] 1 0.040 0.004 0.2 2 0.003 0.010 3 0.140 0.030 4 0.120 0.300 5 0.197 0.080 0.1 0.0 1 10 100 1000 10000 t [s] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130513c VUB145-16NOXT Brake IGBT 200 200 200 VGE = 15 V 13V VGE = 15 V 17 V 19 V 150 180 11V 160 150 140 IC IC TVJ = 25C 100 IC 120 TVJ = 125C 100 100 TVJ = 125C [A] [A] 50 [A] 80 60 9V 50 TVJ = 125C 40 TVJ = 25C 20 0 0 0 1 2 3 0 0 1 2 3 4 5 6 7 8 VCE [V] VCE [V] Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics IC = 100 A VCE = 600 V 16 IC = 100 A VCE = 600 V V 14 GE = 15 V TVJ = 125C RG = 6.8 VCE = 600 V VGE = 15 V TVJ = 125C 18 16 15 14 E 12 VGE 10 E 12 Eoff 10 [mJ] [V] 10 11 12 13 Fig. 3 Typ. tranfer characteristics 20 20 9 VGE [V] [mJ] 8 Eoff 6 5 4 Eon 10 Eon 8 2 0 0 0 100 200 300 400 6 0 40 QG [nC] 80 120 160 200 0 Fig. 4 Typ. turn-on gate charge 4 8 12 16 20 24 RG [ ] IC [A] Fig. 5 Typ. switching energy versus collector current Fig. 6 Typ. switching energy versus gate resistance 1 ZthJC 0.1 [K/W] 0.01 0.001 0.01 0.1 1 t [s] Fig. 7 Typ. transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130513c VUB145-16NOXT Brake Diode 80 5 60 TVJ = 125C VR = 800 V 70 4 50 IF = 60 A 30 A 15 A 60 IF 50 IF = 60 A 30 A 15 A 3 Qr 40 [A] TVJ = 125C 25C 30 40 IRM 30 [A] [C] 2 20 20 1 0 0 1 2 0 100 3 TVJ = 125C VR = 800 V 10 10 0 1000 V F [V ] 0 200 Fig. 2 Typ. reverse recovery charge Qr versus -diF /dt Fig. 1 Forward current IF vs. VF 2.0 220 1.5 trr Kf 1.0 800 1000 120 1.2 TVJ = 125C IF = 30 A 100 IF = 60 A 30 A 15 A 180 600 Fig. 3 Typ. peak reverse current IRM versus -diF /dt TVJ = 125C VR = 800 V 200 400 -diF /dt [A/s] -diF /dt [A/s] 1.0 80 0.8 60 0.6 VFR [ns] 160 trr [s] [V] IRM 40 0.4 0.5 140 QR 20 0.2 trr VFR 0.0 0 120 0 40 80 120 160 0 200 400 600 800 1000 -diF /dt [A/s] TVJ [C] Fig. 4 Dynamic parameters Qr, IRM versus TVJ 0 200 400 600 800 0.0 1000 -diF /dt [A/s] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt Fig. 5 Typ. recovery time trr versus -diF /dt 1 ZthJC 0.1 i [K/W] Ri [K/W] 1 0.465 2 0.179 3 0.256 0.01 0.001 0.01 0.1 ti [s] 0.0052 0.0003 0.0397 1 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130513c