SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE BVcEO hee VcE (sat) fr Cop @ 10V Ic Pr Device Type @10mA Typical 1MHz Continuous @ 25C (V) Min. Max. @ Ic(mA)|Vc_e (V) Max. @ I{mA) fg(mA) (MHz) Typical (Pe) = (mA) (mw) 2N3903 40 300 2N3904 40 350 2N3905 40 250 2N3906 40 300 2N4123 30 300 2N4124 _ 25 350 2N4125 / 30 250 2N4126 | 25 300 2N4400 40 225 2N4401_ | 40 275 2N4402 40 300 2N4403 40 350 2N4409 50 100 2N4410 100 2N5088 75 2N5089 75 2N5219 2N5220 2N5221 2N5223 2N5225 2N5226 2N5227 GES929 GES930 GES2221 GES2221A GES2222 GES2222A GES2483 GES2906 GES2907 GES5305 GES5306 GES5307 GES5308 GES5368 GES5369 GES5370 GES5371 GES5372 GES5373 GES5374 103DEVICE NPN PNP 2N3903 2N4402 2N4403 1 2N4126 GES5371 GES5373 ES5374 7 G 10 GES5812 GES5817 GES5823 1 SILICON SIGNAL TRANSISTORS BVceo (Vv) TO-92 PACKAGE hee COMPLEMENTARY PAIRS VcE(SAT) MIN.-MAX. @ Ic, Vee (V) 50-150 10mA 50-150 50-1 100-300 50-150 100- 50-150 120-360 50-150 120-360 200 100-300 60-600 100-300 200-400 60-300 30-150 1 50-150 150-500 150-500 60-160 60-160 1 100-200 NIN INI N EDN 150-300 160 i 100-200 100-200 NIN 100-300 1 wafer f a} li] / fo} f if] af af fe] lpn 200-500 1 1 1 107 (V) MAX. @ COMPLEMENT 2N3905 2N3904 2N4125 DQ OOO) Oj;O1a) GES6013 12 GES6015 17 $601 GES2906 (Continued)SILICON SIGNAL TRANSISTORS SWITCHES T0-92 PACKAGE Vv tg (mA) Ig. (Torr! Ver (V) EB(OFF) Device Tore le (mA) (mA) (Ton) (Vv) 2N3903 225 2N3904 ' 250 2N3905 260 2N3906 300 2N4400 : : 255 2N4401 255 2N4402 255 2N4403 : 255 GES5368 ' 350 GES5369 350 GES5370 400 GES5371 400 GES5372 150 GES5373 160 GES5374 175 GES5375 175 GES6000 : 205 GES6002. 250 GES6004 180 GES6006 : 240 GES6001 155 GES6003. 200 GES6005 155 GES6007 200 GES6010 : GES6012 500 GES6014 400 GES6016 GES6011 GES6013 GES6015 GES6017 GES2221A GES2222A GES2906 GES2907 MPS3638 MPS3638A 110Silicon Transistors ON4 402 | 2N4403 The General Electric 2N4402 and 2N4403 are silicon PNP planar epitaxial c passivated transistors designed for general purpose switching and amplifier S applications. Current and voltage values for PNP are negative. Observe proper bias polarity. absolute maximum ratings: (T, = 25C unless otherwise specified) VOLTAGES Collector to Emitter VcEO 40 Volts E Collector to Base VcBo 40 Volts EMITTER Emitter to Base VEBO 5 Volts TO-92 5 COLLECTOR CURRENT Collector Ic 600 mA 70121 DISSIPATION fe ete Total Power Ta < 25C Py 350 m Watts Total Power To < 25C Pr 1000 m Watts Derate Factor Ta > 25C 2.8 mw/C Derate Factor Tg > 25C 8.0 mW/C TEMPERATURE Operating Ty 55C to 150C C ore, Storage , Tstc. -55C to +150C 3 =C 1, THREE LEADS Lead (1/16 + 1/32 from 2.CONTOUR OF PACKAGE UNCONTROLLED OUTSIDE case for 10 sec.) TL +230C C 3. (THREE LEADS) b2 APPLIES BETWEEN Ly AND Lo. #b APPLIES BETWEEN La AND 12.70 MM (.500') FROM THE SEATING PLANE. DIAMETER IS UN- CONTROLLED INL, AND BEYOND |2.70MM (.500") FROM SEATING PLANE. me eee rr meee eee ee ei ee Se es ee ee sar aan ae es ee ee eee * electrical characteristicS: (T, = 25C unless otherwise specified) 2N4402 ___2N4403 STATIC CHARACTERISTICS SYMBOL MIN. MAX. MIN. MAX. UNITS Collector-Emitter Breakdown Voltage (Ic = 1lmA, Ip = 0) V(BR)CEO 40 _ 40 _ Volts Collector-Base Breakdown Voltage (le = 100uA, Ip = 0) ViBR)CBO 40 _ 40 _ Volts Emitter-Base Breakdown Voltage (Ig = 100nA, Ic = 0) ViBR)EBO 5 - 5 _ Volts Collector Cutoff Current (VcE = 35V, VER (off) = .4V) Icey _ 100 _ 100 nA Base Cutoff Current (Vcr = 35V, Ves (off) = AV) IgEv _ 100 _ 100 nA Forward Current Transfer Ratio (Vcr = IV, Ic = .lmA) hr 7 _ 30 (Vcr = 1V, Ie = lmA) hrr 30 _ 60 7 (Vcg = 1V, Ic = 10mA) thre 50 _ 100 _ (Vcr = 2V, Ic = 150mA) thre 50 150 100 300 (Vor = 2V, Ic = 500mA) +hre 20 - 20 - 4182N4402 2N4403 ___2N4402 2N4403 STATIC CHARACTERISTICS (Continued) SYMBOL MIN. MAX. MIN. MAX. UNITS Collector-Emitter Saturation Voltage (Ic = 150mA, Ig = 15mA) + VcE(sat) on 4 4 Volts (Ic = 500mA, Ip = SOmA) +VcK(sat) _ 75 - 75 Volts Base-Emitter Saturation Voltage (Ic = 150mA, Ip = 15mA) +VBF (sat) 75 95 75 95 Volts (ic = 500mA, Ip = 50mA) T VeE(sat) 1.3 1.3 Volts DYNAMIC CHARACTERISTICS Collector Base Capacitance (Vcp = 10V, Ig = O,f = 1 MHz) Cop -~ 85 - 85 pF Emitter-Base Capacitance (Veg = .5V, Ic = O,f = 1 MHz) Ceb ~ 30 - 30 pF Gain Bandwidth Product (Vcr = 10V, Ic = 20mA, f = 100 MHz) fr 150 200 MHz Forward Current Transfer Ratio (Vcr = 10V, Ic = 1mA, f = 1kHz) hee 30 250 60 500 Input Impedance (Ic = ImA, Vcr = 1OV, f = 1 kHz) Nie 750 7.5k 1.5k 15k Ohms Voltage Feedback Ratio (Ic = ImA, Veg = 10V, f = 1 kHz) hye Jl 8 wl 8 x104 Output Admittance (ic = ImA, Veg = 10V, f = 1 kHz) Noe 1 100 1 100 pmhos SWITCHING CHARACTERISTICS Delay Time Rise Time ta 15 15 ns (Ic = 150mA, Ig, = 15 mA) (Vcr = 30, VERB (off) = 2V) ty _ 20 _ 20 ns Storage Time Fall Time ts _ 225 225 ns (Ig1 = Igo = 15 mA) (Vcr = 30V, Ic = 150mA) tr - 30 _ 30 ns +Pulse width <= 300 usec., Duty Cycle < 2%. *JEDEC Registered Parameters. SWITCHING TIME EQUIVALENT TEST CIRCUITS --30V ~30V <20ns e<2nS +#2V im +14V (Vin = ~30V) ? oo oO ~I6V J -16V | Cg <1Opft | | | b-10 TO 1002S --| je- 1.0 TO 1004S DUTY CYCLE =2% DUTY CYCLE = 2% Scope Rise Time <4nS. +4V ~ Cg Total Shunt Capacitance of Test Jig Connectors and Oscilloscope. 1. TURN-ON TIME 2. TURN-OFF TIME 4192N4402 2N4403 hee - NORMALIZED CURRENT GAIN VOLTAGE - VOLTS 3.0 mee Veg = IV Ty = 125C 2.0 mom Vor =10V. 25C 0.7 0.5 0.3 05 (10 2.0 5.0 IC 20 50 Ig - COLLECTOR CURRENT - mA 3. DC CURRENT GAIN Ol 0.2 100 200 500 Vee (sat) @ Ic/Ig = 10 Vee( on}@ Vee 2 OV Vee(sat)@ Ic/Tp = 10 or 02 05 10 20 50 10 20 50 100 200 500 Ig - COLLECTOR CURRENT ~ mA 5. SATURATION VOLTAGE AND Vge_E (on) 420 Vce - COLLECTOR-EMITTER VOLTAGE - VOLTS 0 0.005 0.01 0.02 0.05 0.1 Ig - BASE CURRENT - mA 4. COLLECTOR SATURATION REGION 02 O85 10 20 50 10 20 50 8yc FOR Vce (sat) -0.5 COEFFICIENT - mV/C -2.0 8yg FOR Vee -2.5 0.1 0.2 05 (10 2.0 5.0 10 20 Ig - COLLECTOR CURRENT - mA 6. TEMPERATURE COEFFICIENTS 50 100 200 500