IGT60R190D1SATMA1 - INFINEON TECHNOLOGIES AG

Final Data Sheet Please read the Important Notice and Warnings at the end of this document Rev. 3.1

www.infineon.com 2018-10-12

IGT60R190D1S

600V CoolGaN™enhancement-mode Power Transistor

Features

•Enhancement mode transistor – Normally OFF switch

•Ultra fast switching

•No reverse-recovery charge

•Capable of reverse conduction

•Low gate charge, low output charge

•Superior commutation ruggedness

•Qualified for standard grade applications according to JEDEC

Standards Benefits

•Improves system efficiency

•Improves power density

•Enables higher operating frequency

•System cost reduction savings

•Reduces EMI

Applications

Consumer SMPS and high density chargers based on the half-bridge topology

(half-bridge topologies for hard and soft switching such as Totem pole PFC,

high frequency LLC and flyback).

For other applications: review CoolGaN™reliability white paper and contact

Infineon regional support

Table 1 Key Performance Parameters at TJ= 25 °C

Table 2 Ordering Information

Gate 8

Drain drain contact

Kelvin Source 7

Source 1,2,3,4,5,6

Parameter Value Unit

DS,max

600

DS(on),max

190

Ω

G,typ

3.2

D,pulse

oss

@ 400

Type / Ordering Code Package Marking Related links

IGT60R190D1S PG-HSOF-8-3 60S190D1 see Appendix A

Final Data Sheet 2 Rev. 3.1

2018-10-12

IGT60R190D1S

600V CoolGaN™enhancement

mode Power Transistor

Table of Contents

Features ...........................................................................................................................................................1

Benefits ...........................................................................................................................................................1

Applications...........................................................................................................................................................1

Table of Contents ..................................................................................................................................................2

1 Maximum ratings ...............................................................................................................................3

2 Thermal characteristics .....................................................................................................................4

3 Electrical characteristics ....................................................................................................................5

4 Electrical characteristics diagrams ....................................................................................................7

5 Test Circuits .....................................................................................................................................13

6 Package Outlines .............................................................................................................................14

7 Appendix A .......................................................................................................................................15

8 Revision History ...............................................................................................................................16

Final Data Sheet 3 Rev. 3.1

2018-10-12

IGT60R190D1S

600V CoolGaN™enhancement

mode Power Transistor

1 Maximum ratings

at Tj= 25 °C, unless otherwise specified.

Continuous application of maximum ratings can deteriorate transistor lifetime. For further information, contact

your local Infineon sales office.

Table 3 Maximum ratings

1All devices are 100% tested at IDS = 4.3 mA to assure VDS ≥ 800 V

2Limits derived from product characterization, parameter not measured during production

3Ensure that average gate drive current, IG,avg is ≤ 7.7 mA. Please see figure 27 for IG,avg, IG,pulse and IGdetails

4Parameter is influenced by rel-requirements. Please contact the local Infineon Sales Office to get an assessment of your application.

5We recommend using an advanced driving technique to optimize the device performance. Please see gate drive application note for

details.

Parameter Symbol Values Unit Note/Test Condition

Min. Typ. Max.

Drain Source Voltage 1VDS,max - - 600 V VGS = 0 V

Continuous current, drain source ID-

12.5

8.0

5.5

A TC= 25 °C; Tj= Tj, max

TC= 100 °C; Tj= Tj, max

TC= 125 °C; Tj= Tj, max

Pulsed current, drain source 2 3 ID,pulse - - 23 A TC= 25 °C; IG= 9.6 mA;

See Figure 3; Figure 5;

Pulsed current, drain source 3 4 ID,pulse

- - 13.5 A TC= 125 °C; IG= 9.6 mA;

See Figure 4; Figure 6;

Gate current, continuous 3 4 5 IG,avg - - 7.7 mA Tj= -55 °C to 150 °C;

Gate current, pulsed 3 5 IG,pulse - - 770 mA Tj= -55 °C to 150 °C;

tPULSE = 50 ns, f=100 kHz

Gate source voltage, continuous 5VGS -10 - - V Tj= -55 °C to 150 °C;

Gate source voltage, pulsed 5VGS,pulse -25 - - V Tj= -55 °C to 150 °C;

tPULSE = 50 ns, f = 100 kHz;

open drain

Power dissipation Ptot - - 55.5 W TC= 25 °C

Operating temperature Tj-55 - 150 °C

Storage temperature Tstg -55 - 150 °C Max shelf life depends on

storage conditions.

Drain-source voltage slew-rate dV/dt 200 V/ns

Final Data Sheet 4 Rev. 3.1

2018-10-12

IGT60R190D1S

600V CoolGaN™enhancement

mode Power Transistor

2 Thermal characteristics

Table 4 Thermal characteristics

Parameter Symbol Values Unit Note/Test Condition

Min. Typ. Max.

Thermal resistance, junction

case

RthJC - - 2.25 °C/W

Thermal resistance, junction

ambient

RthJA - - 62 °C/W Device on PCB, minimum

footprint

Thermal resistance, junction

ambient

for SMD version

RthJA - 35 45 °C/W

Device on

40mm*40mm*

1.5mm epoxy PCB FR4 with

6cm² (one layer, 70μm

thickness) copper area for

drain connection and

cooling. PCB is vertical

without air stream cooling.

Reflow soldering temperature

Tsold - - 245 °C MSL3

Final Data Sheet 5 Rev. 3.1

2018-10-12

IGT60R190D1S

600V CoolGaN™enhancement

mode Power Transistor

3 Electrical characteristics

at Tj= 25 °C, unless specified otherwise

Table 5 Static characteristics

Table 6 Dynamic characteristics

1Parameter represents end of use leakage in applications

2Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400 V

3Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 400 V

Parameter Symbol Values Unit Note/Test Condition

Min. Typ. Max.

Gate threshold voltage

VGS(th) 0.9

0.7

1.2

1.0

1.6

1.4

V IDS = 0.96 mA; VDS = 10 V; Tj=25 °C

IDS = 0.96 mA; VDS = 10 V; Tj=125 °C

Drain

Source leakage current

IDSS

0.4

µA VDS = 600 V; VGS = 0 V; Tj= 25 °C

VDS = 600 V; VGS = 0 V; Tj= 150 °C

Drain

Source leakage current at

application conditions1IDSSapp - 0.3 - µA VDS = 400 V; VGS = 0 V; Tj= 125 °C

Gate

Source leakage current

IGSS

-1

mA VDS = 0 V; VGS = -10 V; Tj= 25 °C

VDS = 0 V; VGS = -10 V; Tj= 125 °C

Drain

Source on

state resistance

RDS(on)

0.14

0.26

0.19

Ω IG= 9.6 mA; ID= 5 A; Tj= 25 °C

IG= 9.6 mA; ID= 5 A; Tj= 150 °C

Gate resistance

RG,int

- 0.27 - Ω LCR impedance measurement;

f = fres

Parameter Symbol Values Unit Note/Test Condition

Min. Typ. Max.

Input capacitance Ciss -157 - pF VGS = 0 V; VDS = 400 V;

f = 1 MHz

Output capacitance Coss - 28 - pF VGS = 0 V; VDS = 400 V;

f = 1 MHz

Reverse Transfer capacitance Crss - 0.15 - pF VGS = 0 V; VDS = 400 V;

f = 1 MHz

Effective output capacitance,

energy related 2Co(er) - 32.5 - pF VDS = 0 to 400 V

Effective output capacitance,

time related 3Co(tr) - 40 - pF VGS = 0 V; VDS = 0 to 400 V;

Id = const

Output charge Qoss - 16 - nC VDS = 0 to 400 V

Turn- on delay time td(on) - 11 - ns see Figure 23

Turn- off delay time td(off) - 12 - ns see Figure 23

Rise time tr- 5 - ns see Figure 23

Fall time tf- 12 - ns see Figure 23

Final Data Sheet 6 Rev. 3.1

2018-10-12

IGT60R190D1S

600V CoolGaN™enhancement

mode Power Transistor

Table 7 Gate charge characteristics

Table 8 Reverse conduction characteristics

1Excluding Qoss

Parameter Symbol Values Unit Note/Test Condition

Min. Typ. Max.

Gate charge QG-3.2 - nC IGS = 0 to 3.8 mA; VDS= 400 V;

ID= 5 A

Parameter Symbol Values Unit Note/Test Condition

Min. Typ. Max.

Source-Drain reverse voltage VSD -2.5 3 V VGS = 0V; ISD = 5 A

Pulsed current, reverse IS,pulse -- 23 A IG= 9.6 mA

Reverse recovery charge Qrr 1-0 - nC ISD = 5 A, VDS = 400V

Reverse recovery time trr -0 - ns

Peak reverse recovery current Irrm -0 - A

Final Data Sheet 7 Rev. 3.1

2018-10-12

IGT60R190D1S

600V CoolGaN™enhancement

mode Power Transistor

4 Electrical characteristics diagrams

at Tj= 25 °C, unless specified otherwise

Figure 1 Power dissipation Figure 2 Max. transient thermal impedance

tot

=f(T

) Z

thJC

=f(t

, D)

Figure 3 Safe operating area Figure 4 Safe operating area

=f(V

); T

= 25 °C I

=f(V

); T

= 125 °C

0 20 40 60 80 100 120 140 160

Ptot [W]

TC[oC]

0.01

0.1

1E-6 1E-4 1E-2 1E+0 1E+2

ZthJC [K/W]

tp[s]

single pulse

0.01

0.02

0.05

0.1

0.2

0.5

0.01

0.1

100

1 10 100 1000

ID[A]

VDS [V]

tp = 20 ns

tp = 10 μs

tp = 100 μs

tp = 1 ms

Limited by

RDS(on)

0.01

0.1

100

1 10 100 1000

ID[A]

VDS [V]

tp = 20 ns

tp = 10 μs

tp = 100 μs

tp = 1 ms

Limited by

RDS(on)

Final Data Sheet 8 Rev. 3.1

2018-10-12

IGT60R190D1S

600V CoolGaN™enhancement

mode Power Transistor

Figure 5 Repetitive safe operating area1Figure 6 Repetitive safe operating area1

Tc = 25 °C; T

≤ 150 °C Tc = 125 °C; T

≤ 150 °C

Figure 7 Typ. output characteristics Figure 8 Typ. output characteristics

=f(V

,IGS); T

= 25 °C I

=f(V

,IGS); T

= 125 °C

1Parameter is influenced by rel-requirements. This value is determined by a typical lifetime-model for consumer applications. Please

contact the local Infineon Sales Office to get an assessment of your application.

0 100 200 300 400 500 600

ID[A]

VDS [V]

Limited by

RDS(on)

tp ≤ 20ns

0 100 200 300 400 500 600

ID[A]

VDS [V]

Limited by

RDS(on)

tp ≤ 20ns

0 2 4 6 8 10

ID[A]

VDS [V]

IG=0.01 mA

IG=0.096 mA

IG=0.3 mA

IG=0.96 mA

IG=3 mA

IG=9.6 mA

0 2 4 6 8 10

ID[A]

VDS [V]

IG=0.01 mA

IG=0.096 mA

IG=0.3 mA

IG=0.96 mA

IG=3 mA

IG=9.6 mA

Final Data Sheet 9 Rev. 3.1

2018-10-12

IGT60R190D1S

600V CoolGaN™enhancement

mode Power Transistor

Figure 9 Typ. Drain-source on-state resistance Figure 10 Drain-source on-state resistance

DS(on)

=f(ID,IG); T

= 125 °C R

DS(on)

=f(T

); ID= 5 A

Figure 11 Typ. gate characteristics forward Figure 12 Typ. gate characteristics reverse

=f(V

); open drain I

=f(V

); T

= 25 °C

200

250

300

350

400

450

500

0 5 10 15 20 25

RDS(on) (mΩ)

ID[A]

IG=0.096 mA

IG=0.3 mA

IG=0.96 mA

IG=3 mA

IG=9.6 mA

120

160

200

240

280

320

-50 0 50 100 150

RDS(on) [mΩ]

Tj[oC]

IG= 9.6 mA

VGS = 3 V

100

150

200

250

300

0 1 2 3 4

IGS [mA]

VGS [V]

-55 oC

25 oC

125 oC

-350

-300

-250

-200

-150

-100

-50

-25 -20 -15 -10 -5 0

IGS (mA)

VGS (V)

Final Data Sheet 10 Rev. 3.1

2018-10-12

IGT60R190D1S

600V CoolGaN™enhancement

mode Power Transistor

Figure 13 Typ. transfer characteristics Figure 14 Typ. transfer characteristics

=f(V

); VDS = 8 V; T

= 25 °C I

=f(V

); VDS = 8 V ; T

= 125 °C

Figure 15 Typ. channel reverse characteristics Figure 16 Typ. channel reverse characteristics

=f(ID, VGS); T

= 25 °C V

=f(ID, VGS); T

= 125 °C

0 1 2 3 4 5

(mA)

ID(A)

VGS (V)

0 1 2 3 4 5

(mA)

ID(A)

VGS (V)

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

-10 -8 -6 -4 -2 0

ID(A)

VDS (V)

0V-1V

-2V

-3V

-4V

-5V VGS

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

-10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0

ID(A)

VDS (V)

-1V

-2V

-3V

-4V

-5V VGS

Final Data Sheet 11 Rev. 3.1

2018-10-12

IGT60R190D1S

600V CoolGaN™enhancement

mode Power Transistor

Figure 17 Typ. channel reverse characteristics Figure 18 Typ. channel reverse characteristics

=f(VDS, VGS); T

= 25 °C I

=f(VDS, VGS); T

= 125 °C

Figure 19 Typ. gate charge Figure 20 Typ. capacitances

VGS = f(QG); VDCLINK = 400 V; ID= 5 A CxSS = f(VDS)

0 1 2 3 4

ISD [A]

VSD [V]

0 V

+ 4 V

012345

ISD [A]

VSD [V]

0 V

+ 4 V

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0 1 2 3

VGS [V]

QG[nC]

0.1

1.0

10.0

100.0

1000.0

0 200 400 600

C[pF]

VDS [V]

Ciss

Coss

Crss

Final Data Sheet 12 Rev. 3.1

2018-10-12

IGT60R190D1S

600V CoolGaN™enhancement

mode Power Transistor

Figure 21 Typ. output charge Figure 22 Typ. Coss stored Energy

QOSS = f(VDS) EOSS = f(VDS)

0 200 400 600

QOSS [nC]

VDS [V]

0 200 400 600

EOSS [μJ]

VDS [V]

Final Data Sheet 13 Rev. 3.1

2018-10-12

IGT60R190D1S

600V CoolGaN™enhancement

mode Power Transistor

5 Test Circuits

Figure 23

Switching times with inductive load

Figure 24

Switching

times waveform

RSS

RON

ROFF

RSS

RON

ROFF

400V

VDS

ID=5 A, RON=15 Ω; ROFF=4.7 Ω; RSS=1500 Ω;

CG=0.68 nF; VDRV = 12 V

Figure 25

Reverse Channel Characteristics Test

Figure 26

Typical Reverse Channel Recovery

RSS

RON

ROFF

RSS

RON

ROFF

400V

VDS

ID=5 A, RON=15 Ω; ROFF=4.7 Ω; RSS=1500 Ω;

CG=0.68 nF; VDRV = 12 V The recovery charge is QOSS only, no additional Qrr

Figure 27 Gate current switching waveform

IG, avg

IG,pulse

Final Data Sheet 14 Rev. 3.1

2018-10-12

IGT60R190D1S

600V CoolGaN™enhancement

mode Power Transistor

6 Package Outlines

Figure 28 PG-HSOF-8-3 Package Outline, dimensions (mm)

Final Data Sheet 15 Rev. 3.1

2018-10-12

IGT60R190D1S

600V CoolGaN™enhancement

mode Power Transistor

7 Appendix A

Table 9 Related links

•IFX CoolGaNTM webpage: www.infineon.com/why-coolgan

•IFX CoolGaNTM reliability white paper: www.infineon.com/gan-reliability

•IFX CoolGaNTM gate drive application note: www.infineon.com/driving-coolgan

•IFX CoolGaNTM applications information:

owww.infineon.com/gan-in-server-telecom

owww.infineon.com/gan-in-wirelesscharging

owww.infineon.com/gan-in-audio

owww.infineon.com/gan-in-adapter-charger

Final Data Sheet 16 Rev. 3.1

2018-10-12

IGT60R190D1S

600V CoolGaN™enhancement

mode Power Transistor

8 Revision History

Major changes since the last revision

Revision Date Description of change

3.0 2017-04-25 Release of final version

3.1 2018-10-12 Updated application section; added Appendix A and Fig. 27; updated maximum

rating table footnotes, switching times and figures.

Published by

Infineon Technologies AG

81726 München, Germany

Do you have a question about this

document?

Email: erratum@infineon.com

Document reference

IMPORTANT NOTICE

The information given in this document shall in no

event be regarded as a guarantee of conditions or

characteristics (“Beschaffenheitsgarantie”) .

With respect to any examples, hints or any typical

values stated herein and/or any information

regarding the application of the product, Infineon

Technologies hereby disclaims any and all

warranties and liabilities of any kind, including

without limitation warranties of non-infringement

of intellectual property rights of any third party.

In addition, any information given in this document

is subject to customer’s compliance with its

obligations stated in this document and any

applicable legal requirements, norms and

standards concerning customer’s products and any

use of the product of Infineon Technologies in

customer’s applications.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer’s technical departments

to evaluate the suitability of the product for the

intended application and the completeness of the

product information given in this document with

respect to such application.

For further information on the product, technology,

delivery terms and conditions and prices please

contact your nearest Infineon Technologies office

(www.infineon.com).

WARNINGS

Due to technical requirements products may

contain dangerous substances. For information on

the types in question please contact your nearest

Infineon Technologies office.

Except as otherwise explicitly approved by Infineon

Technologies in a written document signed by

authorized representatives of Infineon

Technologies, Infineon Technologies’ products may

not be used in any applications where a failure of

the product or any consequences of the use thereof

can reasonably be expected to result in personal

injury.

Edition 2018-10-12

ifx1

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