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DATA SHEET MOS INTEGRATED CIRCUIT PD166007 SINGLE N-CHANNEL HIGH SIDE INTELLIGENT POWER DEVICE PACKAGE DRAWING (unit: mm) The PD166007 device is an N-channel high-side switch with charge 4.0 MIN (4.4 TYP) sense and embedded protection functions. * Built-in charge pump 1 * Low on-state resistance 0.50.1 2 3 4 5 0 to 0.25 0.60.1 1.14 GAUGE PLANE * Over-temperature protection 0.50.1 0.508 - Shutdown with auto-restart on cooling SEATING PLANE - Shutdown by short-circuit detection 1.520.12 0.8 * Short-circuit protection 2.30.1 6 6.10.2 FEATURES 1.0 TYP 6.50.2 5.0 TYP 4.3 MIN pump, current controlled input, diagnostic feedback with load current 10.3 MAX (9.8 TYP) GENERAL DESCRIPTION * Small multi-chip package: JEDEC 5-pin TO-252 NOTE 1. (MSL: 3, profile acc. J-STD-20C) <R> No Plating area * Built-in diagnostic function - Proportional load current sensing - Defined fault signal in case of thermal shutdown and/or short circuit shutdown <R> ORDERING INFORMATION Part Number PD166007T1F-E1-AY Note Lead plating Packing Package Sn Tape 2500 p/reel 5-pin TO-252 (MP-3ZK) Note Pb-free (This product does not contain Pb in the external electrode.) <R> QUALITY GRADE Part Number Quality Grade PD166007T1F-E1-AY Special Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. APPLICATION * Light bulb (to 55 W) switching * Switching of all types of 14 V DC grounded loads, such as inductor, resistor and capacitor * Replacement for fuse and relay The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. S18529EJ3V0DS00 (3rd edition) Date Published December 2008 NS Printed in Japan The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2006 PD166007 <R> BLOCK DIAGRAM 3 & Tab ICC VCC VCC - VIN IIN IN 2 VIN Internal power supply Charge pump Power supply voltage sense Current detector Dynamic clamp Output voltage sense Current sense ESD protection Control logic VCC Von ESD protection Fault signal output VOUT 4 Tab Terminal Name 1 OUT Output to load: pin 1 and 5 must be externally shorted. 2 IN Input; activates the power switch, if shorted to ground. 3&Tab VCC Supply Voltage: tab and pin 3 are internally shorted. OUT IS VIS Pin No. 5 Load IIS RIS PIN CONFIGURATION IS IL OUT Temperature Sensor 4 1&5 Function Sense Output: diagnostic feedback 1 2 3 4 5 Note Output to load: pin 1 and 5 must be externally shorted. Note If current sense and diagnostic features are not used, IS terminal has to be connected to GND via resistor. 2 Data Sheet S18529EJ3V0DS00 PD166007 ABSOLUTE MAXIMUM RATING (Ta = 25C, unless otherwise specified) Parameter Symbol VCC voltage VCC1 VCC voltage for full short circuit VCC2 Test Conditions Rating Unit 28 V 18 V 36 V 30 A Self Limited A 59 W protection VCC voltage (Load Dump) VCC3 RI = 1 , RL = 1.5 , td = 400 ms, RIS = 1 k, IN = low or high Load current IL DC, TC = 25C Load current (short circuit IL(SC) current) Power dissipation PD TC = 25C Channel temperature Tch -40 to +150 C Storage temperature Tstg -55 to +150 C Electric discharge capability VESD IN, IS 2.0 kV OUT 4.0 kV R = 1.5 k, C = 100pF (Human Body Model) Voltage of IN pin (DC) VIN VCC = 14 V VCC+14 V, VCC-28 V V Voltage of IS pin (DC) VIS VCC = 14 V VCC+14 V, VCC-28 V V RECOMMENDED OPERATING CONDITIONS Parameter Power supply voltage Symbol VCC Test Conditions Tch = -40 to 150C Min. Typ. Max. Unit 18 V Typ. Max. Unit 45 55 C/W Typ. Max. Unit 0.7 2.2 mA 10 A 8 THERMAL CHARACTERISTICS Parameter Thermal Resistance Symbol Rth(ch-a) Test Conditions Min. Device on 50 mm x 50 mm x 1.5 mm epoxy PCB FR4 with 6 cm of 70 m 2 copper area ELECTRICAL CHARACTERISTICS (VCC = 12 V, Tch = 25C, unless otherwise specified) Parameter Required current capability of Symbol IIH Test Conditions Tch = -40 to 150C Input switch Input current for turn-off IIL Standby Current ICC(off) On State Resistance Ron Iin = 0 A IL = 7.5 A Min. Tch = 25C 4 6 A Tch = -40 to 150C 4 15 A Tch = 25C 8 10 Tch = 150C 14 18 200 400 s m Ton RL = 2.2 , Turn Off Time Toff Tch = -40 to 150C 250 700 s Rise time Tr refer to page 15 150 300 s Fall time Tf 100 500 s Slew rate on dV/dton 0.2 0.6 V/s 0.2 0.5 V/s Turn On Time 25 to 50% VOUT, RL = 2.2 , Tch = -40 to 150C, refer to page 15 Slew rate off -dV/dtoff 50 to 25% VOUT, RL = 2.2 , Tch = -40 to 150C, refer to page 15 Data Sheet S18529EJ3V0DS00 3 PD166007 PROTECTION FUNCTIONS (VCC = 12 V, Tch = 25C, unless otherwise specified) Parameter Output voltage drop at reverse Note battery condition Short circuit detection current Symbol Typ. Max. Unit Tch = 25C 0.8 0.84 V Note Tch = 150C 0.6 0.63 V VCC - VIN = 6 V, Tch = -40C 50 120 A Von = 3 V Tch = 25C 50 Tch = 150C IL6, 6(SC) Note IL12, 6(SC) Note IL12, 12(SC) Tch = -40C 35 Tch = 25C 35 VCC - VIN = 12 V, Tch = -40C Von = 3 V Tch = 25C 76 105 Tch = 150C 50 95 IL18, 3(SC) 90 Von = 6 V Tch = 25C 85 IL18, 6(SC) Tch = -40C 55 Von = 12 V Tch = 25C 50 Note VCC - VIN = 18 V, Tch = -40C 130 Tch = 25C 125 IL18, 18(SC) 60 VCC - VIN = 18 V, Tch = -40C 110 Tch = 25C 110 VCC - VIN = 18 V, Tch = -40C 75 Tch = 25C 70 170 120 65 VCC - VIN = 18 V, Tch = -40C 50 Von = 18 V Tch = 25C 50 Tch = 150C 200 100 Von = 12 V 30 120 110 Von = 6 V 50 160 45 Von = 3 V Tch = 150C Note 10 180 80 VCC - VIN = 12 V, Tch = 150C IL18, 12(SC) 40 110 35 110 Tch = -40C Tch = 150C Note 10 VCC - VIN = 12 V, Tch = 150C Note 45 VCC - VIN = 6 V, Tch = 150C Note 20 Von = 6 V Tch = 150C IL12, 3(SC) Output clamp voltage Min. VCC = -12 V, IL = -7.5 A, RIS = 1 k Vds(rev) IL6, 3(SC) Test Conditions 90 5 45 30 34 40 V Von(CL) IL = 40 mA Over load detection voltage VON(OvL) Tch = -40 to 150C 0.65 1 1.45 V Turn-on check delay after td(OC) Tch = -40 to 150C 0.8 1.9 3.5 ms 150 175 C 10 C (inductive load switch off) input current positive slope Thermal shutdown Tth temperature Thermal hysteresis Tth Note Not subject to production test, specified by design. 4 Data Sheet S18529EJ3V0DS00 PD166007 DIAGNOSTIC CHARACTERISTICS (VCC = 12 V, Tch = 25C, unless otherwise specified) Parameter Current sense ratio Symbol KILIS Test Conditions Min. Typ. Max. Tch = -40C 8300 9350 11000 Tch = 25C 8300 9400 10600 Tch = 150C 8300 9450 10000 Tch = -40C 7500 9400 11400 Tch = 25C 8000 9500 10800 Tch = 150C 8200 9550 10200 Tch = -40C 6100 9600 14200 Tch = 25C 6500 9600 12800 Tch = 150C 7600 9600 11500 Unit KILIS = IL/IIS VIS < VOUT - 6 V, IIS < IIS,lim IL = 30 A IL = 7.5 A IL = 2.5 A Sense current offset current IIS,offset VIN = 0 V, IL = 0 A Sense current under fault IIS,fault Under fault conditions condition 0 8 V < VCC - VIS < 12 V, 60 A 3.5 6.0 12.0 mA 3.5 7.0 12.0 mA 2 6 s 0.1 0.5 A 250 1000 s 50 100 s Tch = -40 to 150C Sense current saturation IIS,lim current Vis < Vout - 6 V, Tch = -40 to 150C Fault sense signal delay after Note short circuit detection tsdelay(fault) Tch = -40 to 150C Sense current leakage current IIS(LL) IIN = 0 A Current sense settling time tson(IS) Tch = -40 to 150C IL = 0 A 20 A after input current positive Note slope Current sense settling time Note during on condition IL = 10 A Tsic(IS) 20 A Note Not subject to production test, specified by design. Data Sheet S18529EJ3V0DS00 5 PD166007 FEATURES DESCLIPTION Driver Circuit (On-Off Control) The high-side output is turned on, if the input pin is shorted to ground. The input current is below IIH. The high-side output is turned off, if the input pin is open or the input current is below IIL. Rin0 is 130 typ. ESD protection diode: 46 V typ. VCC IIN 0 VZ,IN VOUT IN VCC OFF ON OFF Rin0 ZD Logic IIN ON 0 t Switching a resistive load Switching lamps IIN IIN 0 0 IL IL 0 0 VOUT VOUT VCC 0 0 IIS IIS 0 6 t 0 Data Sheet S18529EJ3V0DS00 IIS,lim t PD166007 Switching an inductive load IIN VCC 0 IL IS 0 VOUT SW1 ESD Ris Control Logic 0 VCC OUT Von(CL) IIS t 0 Dynamic clamp operation at inductive load switch off The dynamic clamp circuit works only when the inductive load is switched off. When the inductive load is switched off, the voltage of OUT falls below 0 V. The gate voltage of SW1 is then nearly equal to GND because the IS terminal is connected to GND via an external resister. Next, the voltage at the source of SW1 (= gate of output MOS) falls below the GND voltage. SW1 is turned on, and the clamp diode is connected to the gate of the output MOS, activating the dynamic clamp circuit. When the over-voltage is applied to VCC, the gate voltage and source voltage of SW1 are both nearly equal to GND. SW1 is not turned on, the clamp diode is not connected to the gate of the output MOS, and the dynamic clamp circuit is not activated. Data Sheet S18529EJ3V0DS00 7 PD166007 Short circuit protection Case 1: IN pin is shorted to ground in an overload condition, which includes a short circuit condition. The device shuts down automatically when either or both of following conditions (a, b) is detected. The sense current is fixed at IIS,fault. Shutdown is latched until the next reset via input. (a) IL > IL(sc) (b) Von > Von(OvL) after td(OC) Case1-(a) IL > IL(sc) IIN Short circuit detection (Evaluation circuit) 0 IL(SC) IL VCC 0 VOUT/VCC IN VCC VBAT Von OUT IIN VBAT VIN VON IIS IS VIS VOUT RIS IL RL VOUT 0 : Cable impedance tsdelay(fault) IIS IIS,fault t 0 tsdelay(fault): Fault sense signal delay after short circuit detection IL(SC): Short circuit detection current Depending on the external impedance Typical Short circuit detection current characteristics The short circuit detection current changes according VCC voltage and Von voltage for the purpose of to be strength of the robustness under short circuit condition. IL(SC) vs. VCC - VIN 150 IL(SC) [A] Von=3V 160 120 140 120 IL(SC) [A] Von=6V 100 80 VCC-VIN=18V 60 40 VCC-VIN=12V 20 Von=12V 60 30 VCC-VIN=6V 0 Von [V] 0 8 90 5 10 15 20 0 5 Data Sheet S18529EJ3V0DS00 10 VCC-VIN [V] 15 20 PD166007 Case1-(b) Von > Von(OvL) after td(OC) Short circuit detection IIN (Evaluation circuit) 0 IL IL(SC) VCC 0 IIN VOUT/VCC IN VCC Von(OvL) VIN IS VIS IIS VOUT RIS IL VON VOUT VBAT VBAT Von OUT RL 0 : Cable impedance td(oc) IIS td(oc): Turn-on check delay after input current positive slope IIS,fault t 0 Depending on the external impedance Data Sheet S18529EJ3V0DS00 9 PD166007 Case 2: Short circuit during on-condition The device shuts down automatically when either or both of following conditions (a, b) is detected. The sense current is fixed at IIS,fault. Shutdown is latched until the next reset via input. (a) IL > IL(sc) (b) Von > Von(OvL) after td(oc) Case2-(a) IL > IL(sc) IIN Short circuit detection (Evaluation circuit) 0 IL IL(SC) VCC 0 VOUT IN VCC VBAT Von OUT IIN VIN IS VIS IIS VOUT RIS IL RL 0 : Cable impedance tsdelay(fault) IIS tsdelay(fault): Fault sense signal delay after short circuit detection IIS,fault t 0 IL(SC): short circuit detection current Depending on the external impedance 10 Data Sheet S18529EJ3V0DS00 PD166007 Case2-(b) Von > Von(OvL) after td(OC) IIN Short circuit detection 0 IL(SC) IL 0 VOUT/VCC VCC VBAT Von(OvL) VOUT 0 IIS tsdelay(fault) td(oc) IIS,fault t 0 Depending on the external impedance td(oc): Turn-on check delay after input current positive slope tsdelay(fault): Fault sense signal delay after short circuit detection IL(SC): Short circuit detection current (Evaluation circuit) VCC IIN IN VBAT Von OUT VIN IS VIS IIS VOUT RIS IL RL : Cable impedance Data Sheet S18529EJ3V0DS00 11 PD166007 Over-temperature protection The output is switched off if over-temperature is detected. The device switches on again after it cools down. IIN 0 Tch Tth Tth VOUT 0 IIS IIS,fault t 0 Power dissipation under reverse battery condition In the case of a reverse battery condition, the intrinsic body diode causes power dissipation. Additional power is dissipated by the internal resister. The following is the formula for estimation of total power dissipation Pd(rev) in a reverse battery condition. Pd(rev) = Vds(rev) x IL + (VCC - Vf - Iin(rev) x Rin) x Iin(rev) + (VCC - Iis(rev) x Ris) x Iis(rev) Iin(rev) = (VCC - ( Vf +Vf,IN)) / (Rin0 + Rin) Iis(rev) = (VCC - Vf,IS) / (Ris0 + Ris) Vf,IN: Forward voltage of Vz,IN Vf,IS: Forward voltage of Vz,IS Vf: Forward voltage of parasitic diode of external input switch The reverse current through the intrinsic body diode has to be limited by the connected load. The current through sense pin IN is limited by Rin0 130 typ.. (Please refer to Current sense output). The current through input pin IS is limited by Ris0 130 typ. and external Ris. (Please refer to Driver Circuit (On-Off Control)). 12 Data Sheet S18529EJ3V0DS00 PD166007 Device behavior at low voltage condition If the voltage supply goes down, the device cannot keep a fully ON state under 4.6 V(typ.), and Von voltage is going to increase. Then, if Von voltage goes over Von(OvL), the device shuts down the output. Shutdown is latched until the next reset via input. Shutdown does not work during td(oc) after input is active. VON(OvL) goes down under 4.6 V. IIN 0 IL 0 VOUT/Vcc Vcc VBAT VOUT Von(OvL) 0 t td(oc) Over load detection voltage characteristics under low voltage supply condition Over load detection voltage Von(OvL) [V] 1.2 1 0.8 0.6 0.4 0.2 0 0 5 10 15 20 Voltage supply Vcc - VIN [V] Data Sheet S18529EJ3V0DS00 13 PD166007 Current sense output VCC Ris0 is 130 typ. Vz,IS = 46 V (typ.), RIS = 1 k nominal. VZ,IS IS can be only driven by the internal circuit as long as Vis < Vout-6 V. ZD IS Ris should be less than 20 k for any application. Even If current sense and diagnostic features IIS Ris0 are not used, Ris has to be connected. Ris IIS IIS,lim KILIS=IL/IIS VIS<Vout-6 V, IIS<IIS,lim IIS,offset IL IL,lim Current sense ratio KILIS 16000 Tch = -40degreeC Tch = 150degreeC 14000 Current Sense Ration 12000 10000 8000 6000 4000 0 5 10 15 Load Current 14 20 IL[A] Data Sheet S18529EJ3V0DS00 25 30 35 PD166007 Measurement condition Switching waveform of OUT Terminal IIN toff ton tf tr 90% 50% VOUT dV/dton 10% 90% 50% -dV/dtoff 25% 25% 10% Switching waveform of IS terminal IIN tson(IS) tSIC(IS) tSIC(IS) IIS Data Sheet S18529EJ3V0DS00 15 PD166007 Truth table Input Current State Output Sense Current L - OFF IIS(LL) Normal Operation ON IL/KILIS Over-temperature or Short circuit OFF IIS,fault Open Load ON IIS,offset H Application example in principle 5V Vbat 1) PD166007 R Micro. VCC OUT IN 2) OUTPUT PORT R OUT 3) R IS Load ADC PORT R GND Ris 1) In order to prevent leakage current through at IN terminal via PCB, it is recommended to pull up the IN terminal to VCC using around 1 to10 k (approx.) resistor. 2) If output current is over destruction current characteristics for inductive load at a single off, it must be connected through an external component for protection purpose. 3) If current sense and diagnostic features are not used, IS terminal has to be connected to GND via resistor. 16 Data Sheet S18529EJ3V0DS00 PD166007 TYPICAL CHARACTERISTICS INPUT CURRENT FOR TURN OFF VS. AMBIENT TEMPERATURE 3 120 2.5 100 Input Currnt for Turn Off IIL[uA] Requires Current Capability of Input Switch IIH[mA] REQUIRED CURRENT CAPABIRITY OF INPUT SWITCH VS. AMBIENT TEMPERATURE 2 1.5 1 80 60 40 20 0.5 Vcc=12V Vcc=12V 0 -50 0 0 50 100 150 200 -50 0 50 100 150 200 Ambient Temperature Ta[degreeC] Ambient Temperature Ta[degreeC] STANDBY CURRENT VS. AMBIENT TEMPERATURE 20 18 Standby Current Icc(off) [uA] 16 14 12 10 8 6 4 Vcc=12V IIN=0A 2 0 -50 0 50 100 150 200 Ambient Temperature Ta[degreeC] TURN OFF TIME VS. AMBIENT TEMPERATURE 800 800 700 700 600 600 Turn Off Time toff[us] Turn On Time ton[us] TURN ON TIME VS. AMBIENT TEMPERATURE 500 400 Vcc=6V 300 200 500 400 Vcc=18V Vcc=12V 300 Vcc=6V 200 Vcc=12V Vcc=18V 100 100 RL=2.2ohm RL=2.2ohm 0 0 -50 0 50 100 150 200 -50 Ambient Temperature Ta[degreeC] 0 50 100 150 200 Ambient Temperature Ta[degreeC] Data Sheet S18529EJ3V0DS00 17 PD166007 FALL TIME VS. AMBIENT TEMPERATURE 600 500 500 400 400 Fall Time tf[us] Rise Time tr[us] RISE TIME VS. AMBIENT TEMPERATURE 600 Vcc=6V 300 200 Vcc=12V Vcc=18V 100 300 200 Vcc=18V Vcc=12V 100 Vcc=6V RL=2.2ohm RL=2.2ohm 0 0 -50 0 50 100 150 200 -50 0 Ambient Temperature Ta[degreeC] OUTPUT CLAMP VOLTAGE (INDUCTIVE LOAD SWITCH OFF) VS. AMBIENT TEMPERATURE IIS.offset[uA] 38 Sense Current Offset Current Output Clamp Voltage (inductive load switch off) Von(CL) [V] 150 200 80 36 34 32 Vcc=12V IL=40mA 60 40 20 0 -20 -40 -60 -80 30 -50 0 50 100 150 200 -50 SENSE CURRENT LEAKAGE CURRENT VS. AMBIENT TEMPERATURE 0.1 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 Vcc=12V Iin=0A 0.01 0 -50 0 50 100 0 50 100 Ambient Temperature Ta[degreeC] Ambient Temperature Ta[degreeC] Sense Current Leakage Current IIS(LL) [uA] 100 SENSE CURRENT OFFSET CURRENT VS. AMBIENT TEMPERATURE 40 150 200 Ambient Temperature Ta[degreeC] 18 50 Ambient Temperature Ta[deg] Data Sheet S18529EJ3V0DS00 150 200 PD166007 SENSE CURRENT UNDER FAULT CONDITION VS. AMBIENT TEMPERATURE SENSE CURRENT SATURATION CURRENT VS. AMBIENT TEMPERATURE 14 Sense Current Saturation Current IIS.lim[mA] Sense Current under Fault Condition IIS.fault[mA] 14 12 10 Vcc-Vis=12V 8 6 Vcc-Vis=8V 4 2 0 12 10 8 6 4 2 Vis<VOUT-6V 0 -50 0 50 100 150 200 -50 0 Ambient Temperature Ta[degreeC] 50 100 150 200 Ambient Temperature Ta[degreeC] ON STATE RESISTANCE VS. AMBIENT TEMPERATURE ON STATE RESISTENCE VS. VCC - VIN VOLTAGE 20 12 18 On State Resistance Ron[m] On State Resistance Ron[m] 10 8 6 4 16 14 12 10 8 6 4 2 2 Tch=25degreeC 0 0 0 5 10 15 -50 20 0 50 100 150 200 Ambient Temperature Ta[degreeC] VCC-VIN Voltage[V] SLEW RATE VS. AMBIENT TEMPERATURE 0.45 0.4 Slew rate dV/dt[V/us] 0.35 0.3 -dV/dtoff 0.25 0.2 0.15 dV/dton 0.1 0.05 0 -50 0 50 100 150 200 Ambient Tempereture Ta[degreeC] Data Sheet S18529EJ3V0DS00 19 PD166007 THERMAL CHARACTERISTICS TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Transient Thermal Resistance Rth (degreeC/W) 1000 100 Rth(ch-a)=55.0degreeC/W 10 Rth(ch-c)=3.17degreeC/W 1 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width (s) <R> MAXIMUM ALLOWABLE LOAD INDUCTANCE FOR A SINGLE SWITCH OFF INDUCTIVE LOAD SWITCH-OFF ENERGY DISSIPATION FOR A SINGLE PULSE Maximum allowable load inductance for a single switch off 100 IAS[A] Tch,start150degreeC, VCC=12V 10 1 0.01 0.1 1 10 L[mH] The energy dissipation for an inductive load switch-off single pulse in device (EAS1) is estimated by the following formula as RL = 0 . EAS1 = 20 1 2 2 I L Von(CL) - VCC Von(CL) Data Sheet S18529EJ3V0DS00 PD166007 <R> TAPING INFORMATION This is one type (E1) of direction of the device in the career tape. Draw-out side <R> MARKING INFORMATION This figure indicates the marking items and arrangement. However, details of the letterform, the size and the position aren't indicated. 6 6 0 0 7 Pb-free plating marking Lot code Note Internal administrative code Note Composition of the lot code Week code (2 digit number) Year code (last 1 digit number) Data Sheet S18529EJ3V0DS00 21 PD166007 REVISION HISTORY Revision st 1 edition Major changes since last version Page st Released 1 edition November 2006 nd Released 2 edition April 2007 nd 2 edition Revised ton, tr characteristics 3 Add dV/dton, -dV/dtoff characteristics 3 Add VON(OvL) characteristics 4 Add td(OC) characteristics 4 Add explanation device behavior at switching a inductive load 7 Add Short circuit protection Case 1-(b) 9 Add Short circuit protection Case 2-(b) 11 Add explanation device behavior at low voltage condition 13 Revised Measurement condition waveform 15 Revised application example in principle 16 Add maximum allowable load inductance for a single switch off 20 rd Released 3 edition December 2008 rd 3 edition 22 Add description MSL to Features, revised Ordering information 1 Revised Block diagram 2 Revised Maximum allowable load inductance for a single switch off graph 20 Add Taping information, Marking information 21 Data Sheet S18529EJ3V0DS00 PD166007 NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the CMOS device stays in the area between VIL (MAX) and VIH (MIN) due to noise, etc., the device may malfunction. Take care to prevent chattering noise from entering the device when the input level is fixed, and also in the transition period when the input level passes through the area between VIL (MAX) and VIH (MIN). 2 HANDLING OF UNUSED INPUT PINS Unconnected CMOS device inputs can be cause of malfunction. If an input pin is unconnected, it is possible that an internal input level may be generated due to noise, etc., causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND via a resistor if there is a possibility that it will be an output pin. All handling related to unused pins must be judged separately for each device and according to related specifications governing the device. 3 PRECAUTION AGAINST ESD A strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it when it has occurred. Environmental control must be adequate. When it is dry, a humidifier should be used. It is recommended to avoid using insulators that easily build up static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work benches and floors should be grounded. The operator should be grounded using a wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with mounted semiconductor devices. 4 STATUS BEFORE INITIALIZATION Power-on does not necessarily define the initial status of a MOS device. Immediately after the power source is turned ON, devices with reset functions have not yet been initialized. Hence, power-on does not guarantee output pin levels, I/O settings or contents of registers. A device is not initialized until the reset signal is received. A reset operation must be executed immediately after power-on for devices with reset functions. 5 POWER ON/OFF SEQUENCE In the case of a device that uses different power supplies for the internal operation and external interface, as a rule, switch on the external power supply after switching on the internal power supply. When switching the power supply off, as a rule, switch off the external power supply and then the internal power supply. Use of the reverse power on/off sequences may result in the application of an overvoltage to the internal elements of the device, causing malfunction and degradation of internal elements due to the passage of an abnormal current. The correct power on/off sequence must be judged separately for each device and according to related specifications governing the device. 6 INPUT OF SIGNAL DURING POWER OFF STATE Do not input signals or an I/O pull-up power supply while the device is not powered. The current injection that results from input of such a signal or I/O pull-up power supply may cause malfunction and the abnormal current that passes in the device at this time may cause degradation of internal elements. Input of signals during the power off state must be judged separately for each device and according to related specifications governing the device. Data Sheet S18529EJ3V0DS00 23 PD166007 * The information in this document is current as of December, 2008. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. 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(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1