AP0403GH RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance D Simple Drive Requirement Fast Switching Characteristic BVDSS 30V RDS(ON) 4.5m ID G 75A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-252(H) The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25 Continuous Drain Current ID@TC=100 Continuous Drain Current 4 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation TSTG TJ Rating Units 30 V 20 V 75 A 50 A 300 A 44.6 W Storage Temperature Range -55 to 150 Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-c Parameter Maximum Thermal Resistance, Junction-case 3 Value Units 2.8 /W Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 62.5 /W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 /W Data & specifications subject to change without notice 1 200811052 AP0403GH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=250uA 30 - - V VGS=10V, ID=40A - - 4.5 m VGS=4.5V, ID=30A - - 6.5 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=30A - 50 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=20V - - 100 nA ID=30A - 16.5 26 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=24V - 3 nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 9.6 nC VDS=15V - 8 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=30A - 81 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 23 - ns tf Fall Time RD=0.5 - 10 - ns Ciss Input Capacitance VGS=0V - 1530 2450 pF Coss Output Capacitance VDS=25V - 450 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 180 - pF Rg Gate Resistance f=1.0MHz - 1.3 2 Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=40A, VGS=0V - - 1.2 V trr Reverse Recovery Time2 IS=10A, VGS=0V, - 34 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 32 - nC Notes: 1.Pulse width limited by max. junction temperature 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board 4.Package limitation current is 75A . THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP0403GH 200 100 10V 7.0 V 6.0V 5.0 V ID , Drain Current (A) 160 o T C =150 C V G = 4.0 V 120 80 40 V G =4.0V 60 40 20 0 0 0.0 1.0 2.0 3.0 4.0 5.0 0.0 V DS , Drain-to-Source Voltage (V) 1.0 2.0 3.0 4.0 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 6 I D =30A I D =40A V G =10V T C =25 o C Normalized RDS(ON) 5 RDS(ON) (m) 10V 7 .0V 6.0V 5.0 V 80 ID , Drain Current (A) o T C =25 C 4 1.6 1.2 0.8 3 0.4 2 2 4 6 8 -50 10 V GS , Gate-to-Source Voltage (V) 0 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 Normalized VGS(th) (V) 30 IS(A) 20 o T j =150 C T j =25 o C 10 1.2 0.8 0.4 0 0.0 0 0.4 0.8 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP0403GH 8 f=1.0MHz 2000 1600 V DS =15V V DS =18V V DS =24V 6 C (pF) VGS , Gate to Source Voltage (V) I D =30A 4 C iss 1200 800 C oss 2 400 C rss 0 0 0 4 8 12 16 20 24 28 1 32 5 9 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1000 Normalized Thermal Response (Rthjc) 1 100 100us ID (A) 13 V DS ,Drain-to-Source Voltage (V) 1ms 10 10ms 100ms DC 1 T C =25 o C Single Pulse 0 Duty factor = 0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty Factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 1 10 100 0.00001 0.0001 Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) V DS ,Drain-to-Source Voltage (V) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 D D1 E2 E3 B1 F1 e Millimeters SYMBOLS E1 MIN NOM MAX A2 1.80 2.30 2.80 A3 0.40 0.50 0.60 B1 0.40 0.70 1.00 D 6.00 6.50 7.00 D1 4.80 5.35 5.90 E3 3.50 4.00 4.50 F 2.20 2.63 3.05 F1 0.50 0.85 1.20 E1 5.10 5.70 6.30 E2 0.50 1.10 1.80 e -- 2.30 -- C 0.35 0.50 0.65 F e 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. R : 0.127~0.381 A2 A3 (0.1mm C Part Marking Information & Packing : TO-252 Laser Marking Part Number 0403GH Package Code Meet Rohs requirement for low voltage MOSFET only LOGO YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 5