A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 OCNONE
SYMBOL TEST CONDITIONS MINIMUM
TYPICAL
MAXIMUM UNITS
BVDSS ID = 100 mA 60 V
IDSS VDS = 28 V VGS = 0 V 5.0 mA
IGSS VDS = 0 V VGS = 20 V 1.0 µµ A
VGS(th) ID = 50 mA VDS = 10 V 1.0 6.0 V
gfs ID = 2 A VDS = 10 V 1200 mS
Ciss
Coss
Crss VDS = 28 V VGS = 0 V f = 1.0 MHz 105
165
20 pF
PG
ηη D
VDD = 28 V IDQ = 25 mA Pout = 80 W
f = 175 MHz 10
50 12
60 dB
%
ψψ VSWR = 30:1 AT ALL PHASE ANGLES NO DEGRADATION IN OUTPUT POWER
VHF POWER MOSFET
N-Channel Enhancement Mode
VFT80-28
DESCRIPTION:
The VFT80-28 is Designed for
General Purpose Class B Power
Amplifier Applications up to 175 MHz.
FEATURES:
• PG = 10 dB Typical at 175 MHz
• 10:1 Load VSWR Capability
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC10 A
VCB 60 V
VCE 35 V
PDISS 140 W @ TC = 25 OC
TJ-65 OC to +200 OC
TSTG -65 OC to +150 OC
θθJC 1.5 OC/W
PACKAGE STYLE .380 4L FLG
ORDER CODE: ASI10705
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.980 / 24.89
inches / mm
H.160 / 4.06 .180 / 4.57
DIM
.220 / 5.59 .230 / 5.84
.105 / 2.67.085 / 2.16
I
J.240 / 6.10 .255 / 6.48
.785 / 19.94
F
B
G
.125
Ø.125 NOM.
FULL R
D E
C
H
.112 x 45° A
I
J
.004 / 0.10 .006 / 0.15
.280 / 7.11
.720 / 18.29 .730 / 18.54
S
SD
G
