1
Rectifier Device Data
SMB Power Surface Mount Package
. . . employing the Schottky Barrier principle in a metal–to–silicon power
rectifier. Features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for low voltage, high frequency switching power
supplies; free wheeling diodes and polarity protection diodes.
•Compact Package with J–Bend Leads Ideal for Automated Handling
•Highly Stable Oxide Passivated Junction
•Guardring for Over–Voltage Protection
•Low Forward Voltage Drop
Mechanical Characteristics:
•Case: Molded Epoxy
•Epoxy Meets UL94, VO at 1/8″
•Weight: 95 mg (approximately)
•Maximum Temperature of 260°C / 10 Seconds for Soldering
•Polarity: Notch in Plastic Body Indicates Cathode Lead
•Available in 12 mm Tape, 2500 Units per 13 inch Reel, Add “T3” Suffix to Part Number
•Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
•Marking: BKJL
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40 V
Average Rectified Forward Current (At Rated VR, TC = 103°C) IO2.0 A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 104°C) IFRM 4.0 A
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM 70 A
Storage / Operating Case Temperature Tstg, TC–55 to 150 °C
Operating Junction Temperature TJ–55 to 125 °C
Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt 10,000 V/
m
s
THERMAL CHARACTERISTICS
Thermal Resistance – Junction–to–Lead (2)
Thermal Resistance – Junction–to–Ambient (3) Rtjl
Rtja 22.5
78 °C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1), See Figure 2 VFTJ = 25°C TJ = 125°CV
(IF = 2 A)
(IF = 4 A) 0.43
0.50 0.34
0.45
Maximum Instantaneous Reverse Current, See Figure 4 IRTJ = 25°C TJ = 100°CmA
(VR = 40 V)
(VR = 20 V) 0.80
0.10 20
6.0
(1) Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤2.0%.
(2) Minimum pad size (0.108 X 0.085 inch) for each lead on FR4 board.
(3) 1 inch square pad size (1 X 0.5 inch for each lead) on FR4 board.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Motorola, Inc. 1996
Order this document
by MBRS2040LT3/D
SEMICONDUCTOR TECHNICAL DATA
SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERES
40 VOLTS
CASE 403A–03
SMB
MBRS2040LT3
2Rectifier Device Data
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
Figure 5. Current Derating Figure 6. Forward Power Dissipation
0
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
100
10
1.0
VF, MAXIMUM INSTANTANEOUS FORWARD VOLT AGE (VOLTS)
0
1.0
0.1
400
VR, REVERSE VOLTAGE (VOLTS)
100E–3
10E–3
1.0E–3
100E–6
10E–6
1.0E–6
VR, REVERSE VOLTAGE (VOLTS)
20 600
TL, LEAD TEMPERATURE (
°
C)
3.5
2.0
1.5
1.0
0.5
0
IO, A VERAGE FORWARD CURRENT (AMPS)
0.50
1.2
1.0
0.8
0.6
0.2
02.040
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)I
0.1 0.60.2 0.4 0.8 0.2 0.4 0.6 0.8
10
100
10 20 30
, A VERAGE FORWARD CURRENT (AMPS)IO
80 120100
2.5
1.0 1.5 2.5 3.0
0.4
PFO, AVERAGE POWER DISSIPA TION (WATTS) IF, INSTANTANEOUS FOR WARD CURRENT (AMPS)
, REVERSE CURRENT (AMPS)
R
400
VR, REVERSE VOLTAGE (VOLTS)
100E–3
10E–3
1.0E–3
100E–6
10E–6
1.0E–6
I
10 20 30
, MAXIMUM REVERSE CURRENT (AMPS)
R
140
3.0
TJ = 125
°
C
TJ = 100
°
C
TJ = –40
°
C
TJ = 25
°
C
TJ = 125
°
C
TJ = 100
°
C
TJ = 25
°
C
TJ = 125
°
C
TJ = 100
°
C
TJ = 25
°
C
TJ = 125
°
C
TJ = 100
°
C
TJ = 25
°
C
SQUARE W AVE
dc
Ipk/Io =
p
Ipk/Io = 5
Ipk/Io = 10
Ipk/Io = 20
Ipk/Io = 20
Ipk/Io = 10
Ipk/Io = 5
Ipk/Io =
p
SQUARE W AVE
dc
100
MBRS2040LT3
3
Rectifier Device Data
Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating*
Figure 9. Thermal Response Junction to Lead
Figure 10. Thermal Response Junction to Ambient
300
VR, REVERSE VOLTAGE (VOLTS)
1000
100
10
VR, DC REVERSE VOLTAGE (VOLTS)
25 400
105
85
75
65
1000.10.00001
T, TIME (s)
1.0
0.1
0.01
C, CAPACITANCE (pF)
T
R
155.0 10 20 25 35 40 30 355.0 10 2015
95
115
125
0.0001 0.001 0.01 1.0 10
, DERATED OPERATING TEMPERATURE ( C)
J
°
0.001
, TRANSIENT THERMAL RESISTANCE (NORMALIZED)
(T)
T, TIME (s)
1.0
0.1
0.01
R
0.001
, TRANSIENT THERMAL RESISTANCE (NORMALIZED)
(T)
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ may be calculated from the equation: TJ = TJmax – r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax – r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
Rtja = 22.5
°
C/W
42
°
C/W
61
°
C/W
78
°
C/W
92
°
C/W
Rtjl(t) = Rtjl*r(t)
50%
20%
10%
5.0%
2.0%
1.0%
1000.10.00001 1,0000.0001 0.001 0.01 1.0 10
Rtjl(t) = Rtjl*r(t)
50%
20%
10%
5.0%
2.0%
1.0%
TJ = 25
°
C
MBRS2040LT3
4Rectifier Device Data
0.108
2.743
mm
inches
0.089
2.261
0.085
2.159
SMB
PACKAGE DIMENSIONS
CASE 403A–03
ISSUE B
A
S
DB
J
P
K
C
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.160 0.180 4.06 4.57
B0.130 0.150 3.30 3.81
C0.075 0.095 1.90 2.41
D0.077 0.083 1.96 2.11
H0.0020 0.0060 0.051 0.152
J0.006 0.012 0.15 0.30
K0.030 0.050 0.76 1.27
P0.020 REF 0.51 REF
S0.205 0.220 5.21 5.59
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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MBRS2040LT3/D
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