DSA 120 C 150QB
advanced
Schottky
Symbol Definition R a t i n g s
Features / A dvantages:
● Very low Vf
● Extremely low switching losses
● Low Irm-values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Low losses
typ. max.
I
FSM
I
R
A
mA
V
600
I
FAV
A
V
F
0.93
R
thJC
0.40 K/W
V
R
=
T
VJ
=
123
min.
60
ms (50 Hz), sine
Applications:
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
V
RRM
V150
2
T
VJ
V°C=
T
VJ
°C=mA
°C
5
Package:
Part number
V
R
=
I
F
=A
V
T
C
=150°C
P
tot
375 W
T
C
°C=
E
AS
tbd mJ
T
VJ
°C
=
I
AS
=A;L = µH
I
AR
A
V
A
=tbd
f = 10 kHz
1.5·V
R
typ.;
T
VJ
175 °C
-55
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
V
I
V
RRM
FAV
F
=
=
=
150
60
0.80
60
T
VJ
=45°C
100
DSA 120 C 150QB
V
A
V
150
V150
25
25
t
p
=10
25
max. repetitive rev ers e voltage
reverse current
forward voltage
average forward current
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
non-repetitive avalanche energy
repet i t ive ava l an che cu rre nt
Conditions Unit
(Marking on product)
0.80
T
VJ
°C
=25
C
J
pF
j
unction capacitance V
R
= V; f = 1 MHz T
VJ
=°C
125
125
I
F
=A120 T
VJ
=°C
25 V
1.13
I
F
=A60
I
F
=A120 V1.03
V
F0
V
0.51
T
VJ
= 175 °C
r
F
3.9
Ω
m
TO-3P
threshold voltage
slope resistance for power loss calculation only
25
rectangular, d = 0.5
2x
● Industry standard outline
- compatible with TO-247
● Epoxy meets UL 94V-0
● RoHS compliant
IXYS reserves the right to change limits, conditions and dimensi
© 2005 IXYS all rights reserved
0614
Data according to IEC 60747and per diode unless otherwise specified
DSA 120 C 150QB
advanced
I
RMS
A
per pin* 70
R
thCH
K/W
0.25
M
D
Nm1.2
mounting torque 0.8
T
stg
°C
150
storage temperature -55
Weight g
5
Symbol Definition Ratings
typ. max.min.
Conditions
RMS current
thermal resistance case to heatsink
Unit
* Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
Outlines TO-3P
F
C
N
120
mounting force with clip 20
IXYS reserves the right to change limits, conditions and dimensi
© 2005 IXYS all rights reserved
0614
Data according to IEC 60747and per diode unless otherwise specified
