IR-Lumineszenzdiode (850nm) mit hoher Ausgangsleistung in SMR(R) Gehause High Power Infrared Emitter (850nm) in SMR(R) Package Lead (Pb) Free Product - RoHS Compliant SFH 4551 Wesentliche Merkmale Features * * * * * * * * Infrarot LED mit hoher Ausgangsleistung SMR(R) (Surface Mount Radial) Gehause Gehausegleich mit Fotodiode SFH 2500 Kurze Schaltzeiten High Power Infrared LED SMR(R) (Surface Mount Radial) package Same package as photodiode SFH 2500 Short switching times Anwendungen Applications * Sensorik * Diskrete Lichtschranken * Diskrete Optokoppler * Sensor technology * Discrete interrupters * Discrete optocouplers Sicherheitshinweise Safety Advices Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte, nicht sichtbare InfrarotStrahlung, die gefahrlich fur das menschliche Auge sein kann. Produkte, die diese Bauteile enthalten, mussen gema den Sicherheitsrichtlinien der IEC-Normen 60825-1 und 62471 behandelt werden. Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471. Typ Type Bestellnummer Ordering Code Strahlstarkegruppierung1) (IF = 100 mA, tp = 20 ms) Radiant Intensity Grouping1) Ie (mW/sr) SFH 4551 Q65111A0506 63 (typ. 180) 1) gemessen bei einem Raumwinkel = 0.01 sr / measured at a solid angle of = 0.01 sr 2010-07-22 1 SFH 4551 Grenzwerte (TA = 25 C) Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top , Tstg - 40 ... + 85 C Sperrspannung Reverse voltage VR 5 V Vorwartsgleichstrom Forward current IF 100 mA Stostrom, tp = 100 s, D = 0 Surge current IFSM 1 A Verlustleistung Power dissipation Ptot 180 mW 300 K/W Warmewiderstand Sperrschicht - Umgebung bei RthJA Montage auf FR4 Platine, Padgroe je 20 mm2 Thermal resistance junction - ambient mounted on PC-board (FR4), padsize 20 mm2 each Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlange der Strahlung Wavelength at peak emission IF = 100 mA peak 860 nm Centroid-Wellenlange der Strahlung Centroid wavelength IF = 100 mA centroid 850 nm Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 mA 42 nm Abstrahlwinkel Half angle 10 Grad deg. Aktive Chipflache Active chip area A 0.09 mm2 Abmessungen der aktiven Chipflache Dimension of the active chip area LxB LxW 0.3 x 0.3 mm 2010-07-22 2 SFH 4551 Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 100 mA, RL = 50 Switching times, e from 10% to 90% and from 90% to 10%, IF = 100 mA, RL = 50 tr , tf 12 ns VF VF 1.5 (< 1.8) 2.4 (< 3.0) V V Sperrstrom Reverse current IR not designed for A reverse operation Gesamtstrahlungsfluss Total radiant flux IF = 100 mA, tp = 20 ms e typ 50 mW Temperaturkoeffizient von Ie bzw. e, TCI IF = 100 mA Temperature coefficient of Ie or e, IF = 100 mA - 0.5 %/K Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA TCV - 0.7 mV/K Temperaturkoeffizient von , IF = 100 mA Temperature coefficient of , IF = 100 mA TC + 0.3 nm/K Durchlassspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s 2010-07-22 3 SFH 4551 Strahlstarke Ie in Achsrichtung1) gemessen bei einem Raumwinkel = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of = 0.01 sr Bezeichnung Parameter Symbol Werte Values Einheit Unit SFH 4551-V SFH 4551-AW SFH 4551-BW Strahlstarke Ie min Radiant intensity Ie max IF = 100 mA, tp = 20 ms 63 125 100 200 160 320 mW/sr mW/sr Strahlstarke Radiant intensity IF = 1 A, tp = 25 s 750 1200 1900 mW/sr 1) Ie typ Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) / Only one bin in one packing unit (variation lower 2:1) Abstrahlcharakteristik Radiation Characteristics Irel = f () 40 30 20 10 0 OHL03768 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 2010-07-22 0.8 0.6 0.4 0 20 40 60 4 80 100 120 SFH 4551 Relative Spectral Emission Irel = f () Single pulse, tp = 25 s OHF04135 100 Ie = f (IF) Ie 100 mA Radiant Intensity OHL01715 101 Ie I rel % IF I e (100 mA) 80 Max. Permissible Forward Current IF = f (TA), RthJA = 300 K/W 100 OHF03814 0.11 A 0.08 5 0.07 60 40 10-1 0.06 5 0.05 0.04 10 20 -2 0.03 5 0.02 0.01 0 700 750 800 10-3 0 10 nm 950 850 5 10 1 5 10 2 Forward Current IF = f (VF), single pulse, tp = 100 s IF IF tP tP D= T 1.0 10 -1 10 IF T 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 0.8 -2 0.6 5 0.4 1.4 1.0 0.8 0.6 10 -3 0.4 5 10 -4 IF 1.6 A 0.2 0 0.5 1 1.5 2 2.5 V 3 VF 2010-07-22 0.2 0 -5 10 10-4 10-3 10-2 10-1 100 101 s 102 tp 5 OHF03813 tP tP IF D= T T 1.2 D= 5 Permissible Pulse Handling Capability IF = f (), TA = 85 C, duty cycle D = parameter OHF02532 1.2 A 0 10 20 30 40 50 60 70 80 C 100 T Permissible Pulse Handling Capability IF = f (), TA = 25 C, duty cycle D = parameter OHL01713 10 0 A 0 mA 10 3 IF D= 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1 0 -5 10 10-4 10-3 10-2 10-1 100 101 s 102 tp SFH 4551 Mazeichnung Package Outlines 2.54 (0.100) spacing 2.7 (0.106) 2.4 (0.094) 4.8 (0.189) 4.4 (0.173) 3.7 (0.146) 3.3 (0.130) 2.05 (0.081) R 1.95 (0.077) -0.1...0.2 (-0.004...0.008) 7.5 (0.295) 5.5 (0.217) 2.8 (0.110) 2.4 (0.094) Chip position 4.5 (0.177) 3.9 (0.154) 14.7 (0.579) 13.1 (0.516) Cathode 4.5 (0.177) 3.9 (0.154) ((3.2) (0.126)) ((R2.8 (0.110)) ((3.2) (0.126)) 6.0 (0.236) 5.4 (0.213) 7.7 (0.303) 7.1 (0.280) GEOY6960 Mae in mm (inch) / Dimensions in mm (inch). Reflow Loten Reflow Soldering 5.3 (0.209) 2.54 (0.100) 1.3 (0.051) Empfohlenes Lotpaddesign Recommended Solder Pad Bauteil positioniert Component Location on Pad Padgeometrie fur verbesserte Warmeableitung Lotpad Paddesign for improved heat dissipation 3 (0.118) Lotstopplack Solder resist 7 (0.276) Cu-Flache > 20 mm 2 Cu-area > 20 mm 2 Mae in mm (inch) / Dimensions in mm (inch). 2010-07-22 6 OHFY2449 SFH 4551 Lotbedingungen Soldering Conditions Reflow Lotprofil fur bleifreies Loten Reflow Soldering Profile for lead free soldering Vorbehandlung nach JEDEC Level 3 Preconditioning acc. to JEDEC Level 3 (nach J-STD-020-D.01) (acc. to J-STD-020-D.01) OHA04525 300 C T 250 Tp 245 C 240 C tP 217 C 200 tL 150 tS 100 50 25 C 0 0 50 100 150 200 250 s 300 t Pb-Free (SnAgCu) Assembly Profile Feature Recommendation Max. Ratings Ramp-up Rate to Preheat*) 25C to 150C 2C / sec 3C / sec Time ts from TSmin to TSmax (150C to 200C 100s min. 60sec max. 120sec Ramp-up Rate to Peak*) TSmax to TP 2C / sec 3C / sec Liquidus Temperture TL 217C Time tL above TL 80sec max. 100sec Peak Temperature TP 245C max. 260C Time tP within 5C of the specified peak temperature TP - 5K 20sec min. 10sec max. 30sec Ramp-down Rate* TP to 100C 3C / sec 4C / sec maximum Time 25C to Peak temperature max. 8 min. All temperatures refer to the center of the package, measured on the top of the component * slope calculation T/t: t max. 5 sec; fulfillment for the whole T-range 2010-07-22 7 SFH 4551 Published by OSRAM Opto Semiconductors GmbH Leibnizstrae 4, D-93055 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2010-07-22 8