SFH 4551
IR-Lumineszenzdiode (850nm) mit hoher Ausgangsleistung in SMR® Gehäuse
High Power Infrared Emitter (850nm) in SMR® Package
Lead (Pb) Free Product - RoHS Compliant
2010-07-22 1
Wesentliche Merkmale
Infrarot LED mit hoher Ausgangsleistung
•SMR
® (Surface Mount Radial) Gehäuse
Gehäusegleich mit Fotodiode SFH 2500
Kurze Schaltzeiten
Anwendungen
Sensorik
Diskrete Lichtschranken
Diskrete Optokoppler
Sicherheitshinweise
Je nach Betriebsart emittieren diese Bauteile
hochkonzentrierte, nicht sichtbare Infrarot-
Strahlung, die gefährlich für das menschliche
Auge sein kann. Produkte, die diese Bauteile
enthalten, müssen gemäß den Sicherheits-
richtlinien der IEC-Normen 60825-1 und 62471
behandelt werden.
Typ
Type Bestellnummer
Ordering Code Strahlstärkegruppierung1) (IF = 100 mA, tp = 20 ms)
Radiant Intensity Grouping1)
Ie (mW/sr)
SFH 4551 Q65111A0506 63 (typ. 180)
1) gemessen bei einem Raumwin ke l Ω = 0.01 sr / measured at a solid angle of Ω = 0.01 sr
Features
High Power Infrared LED
•SMR
® (Surface Mount Radial) package
Same package as photodiode SFH 2500
Short switching ti mes
Applications
Sensor technol ogy
Discrete interrupters
Discrete optocouplers
Safety Advices
Depending on the mode of operation, these
devices emit highly concentrated non visible
infrared light which can be hazardous to the
human eye. Products which incorporate these
devices have to follow the safety precautions
given in IEC 60825-1 and IEC 62471.
2010-07-22 2
SFH 4551
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top , Tstg – 40 + 85 °C
Sperrspannung
Reverse voltage VR5 V
Vorwärtsgleichstrom
Forward current IF100 mA
Stoßstrom, tp = 100 μs, D = 0
Surge current IFSM 1 A
Verlustleistung
Power dissipation Ptot 180 mW
Wärmewiderstand Sperrschicht - Umgebung bei
Montage auf FR4 Platine, Padgröße je 20 mm2
Thermal resistance junction - ambient mounted
on PC-board (FR4), padsize 20 mm2 each
RthJA
300
K/W
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 100 mA
λpeak 860 nm
Centroid-Wellenlänge der Strahlung
Centroid wavelength
IF = 100 mA
λcentroid 850 nm
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
IF = 100 mA
Δλ 42 nm
Abstrahlwinkel
Half angle ϕ± 10 Grad
deg.
Aktive Chipfläche
Active chip area A0.09 mm2
Abmessungen der aktiven Chipfläche
Dimension of the active chip area L × B
L × W0.3 × 0.3 mm²
SFH 4551
2010-07-22 3
Schaltzeiten, Ie von 10% auf 90% und von 90%
auf 10%, bei IF = 100 mA, RL = 50 Ω
Switching times, Ιe from 10% to 90% and from
90% to 10%, IF = 100 mA, RL = 50 Ω
tr, tf12 ns
Durchlassspannung
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µs
VF
VF
1.5 (< 1.8)
2.4 (< 3.0)
V
V
Sperrstrom
Reverse current IRnot designed for
reverse
operation
μA
Gesamtstrahlungsfluss
Total radiant flux
IF = 100 mA, tp = 20 ms
Φe typ 50 mW
Temperaturkoeffizient von Ie bzw. Φe,
IF = 100 mA
Temperature coefficient of Ie or Φe, IF = 100 mA
TCI– 0.5 %/K
Temperaturkoeffizient von VF, IF = 100 mA
Temperature coefficient of VF, IF = 100 mA TCV– 0.7 mV/K
Temperaturkoeffizient von λ, IF = 100 mA
Temperature coefficient of λ, IF = 100 mA TCλ+ 0.3 nm/K
Kennwerte (TA = 25 °C)
Characteristics (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
2010-07-22 4
SFH 4551
Abstrahlcharakteristik
Radiation Characteristics Irel = f (ϕ)
Strahlstärke Ie in Achsrichtung1)
gemessen bei einem Raumwinkel Ω = 0.01 sr
Radiant Intensity Ie in Axial Direction
at a solid angle of Ω = 0.01 sr
Bezeichnung
Parameter Symbol Werte
Values Einheit
Unit
SFH 4551-V SFH 4551-AW SFH 4551-BW
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie min
Ie max
63
125 100
200 160
320 mW/sr
mW/sr
Strahlstärke
Radiant intensity
IF = 1 A, tp = 25 μs
Ie typ 750 1200 1900 mW/sr
1) Nur eine Gruppe in einer Verpackungseinheit (Streu ung kleiner 2:1) /
Only one bin in one packing unit (variation lower 2:1)
OHL03768
20˚ 40˚ 60˚ 80˚ 100˚ 120˚0.40.60.81.0
100˚
90˚
80˚
70˚
60˚
50˚
10˚20˚30˚40˚
0
0.2
0.4
0.6
0.8
1.0
ϕ
SFH 4551
2010-07-22 5
Relative Spectral Emission
Irel = f (λ)
Forward Current
IF = f (VF), single pulse, tp = 100 μs
700
0nm
%
OHF04135
20
40
60
80
100
950750 800 850
I
rel
λ
OHL01713
F
I
10-4 0.5 1 1.5 2 2.5 V3
100
A
0
F
V
-1
10
5
5
10-2
-3
5
10
Radiant Intensity
Single pulse, tp = 25 μs
Permissible Pulse Handling
Capability IF = f (τ), TA = 25 °C,
duty cycle D = parameter
Ie
Ie 100 mA = f (IF)
OHL01715
10
-3
mA
10
1
0
10
5
5
10
-1
-2
5
10
e
e (100 mA)
I
I
I
F
0
10
1
10
2
10
3
1055
0.05
210-1-2-3-4-5
1010 1010 10
t
p
10 10s10
0
0.1
0.005
0.02
0.01
D
=
T
t
A
I
F
D
=
I
P
T
F
P
t
OHF02532
0.2
0.5
1
0.2
0.4
0.6
0.8
1.0
1.2
Max. Permissible Forward Current
IF = f (TA), RthJA = 300 K/W
Permissible Pulse Handling
Capability IF = f (τ), TA = 85 °C,
duty cycl e D = parameter
0
0˚C
T
I
F
A
OHF03814
10 20 30 40 50 60 70 80 100
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.11
1010
0
-2-3-4-5
1010 10
F
I
A
P
t
=
DT
210-1
10
t
p
10 s10
OHF03813
T
t
P
I
F
0.02
0.3
0.2
0.05
0.1
D
=
0.005
0.01
0.5
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
2010-07-22 6
SFH 4551
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
Empfohlenes Lötpaddesign Reflow Löten
Recommended Solder Pad Reflow Soldering
Maße in mm (inch) / Dimensions in mm (inch).
GEOY6960
3.9 (0.154)
4.5 (0.177)
Cathode
7.1 (0.280)
7.7 (0.303)
2.54 (0.100)
spacing
13.1 (0.516)
14.7 (0.579)
5.5 (0.217)
7.5 (0.295)
1.95 (0.077)
2.05 (0.081)
R((3.2) (0.126))
5.4 (0.213)
6.0 (0.236)
((3.2) (0.126))
2.7 (0.106)
2.4 (0.094)
4.4 (0.173)
4.8 (0.189)
((R2.8 (0.110))
(-0.004...0.008)
3.7 (0.146)
3.3 (0.130)
2.8 (0.110)
2.4 (0.094)
Chip position
3.9 (0.154)
4.5 (0.177)
-0.1...0.2
OHFY2449
5.3 (0.209)
1.3 (0.051)
2.54 (0.100)
7 (0.276)
3 (0.118)
Lötpad
Cu-Fläche > 20 mm
Cu-area > 20 mm22
Paddesign for
verbesserte Wärmeableitung
improved heat dissipation
Padgeometrie für
Lötstopplack
Solder resist
Bauteil positioniert
Component Location on Pad
SFH 4551
2010-07-22 7
Lötbedingungen Vorbehandlung nach JEDEC Level 3
Soldering Conditions Preconditioning acc. to JEDEC Level 3
Reflow Lötprofil für bleifreies Löten (nach J-STD-020-D.01)
Reflow Soldering Profile for lead free soldering (acc. to J-STD-020-D.01)
Pb-Free (SnAgCu) Assembly
Profile Feature Recommendation Max. Ratings
Ramp-up Rate to Preheat*)
25°C to 150°C 2°C / sec 3°C / sec
Time ts from TSmin to TSmax
(150°C to 200°C 100s min. 60sec max. 120sec
Ramp-up Rate to Peak*)
TSmax to TP
2°C / sec 3°C / sec
Liquidus Temperture TL217°C
Time tL above TL80sec max. 100sec
Peak Temperature TP245°C max. 260°C
Time tP within 5°C of the specified peak
temperature TP - 5K 20sec min. 10sec max. 30sec
Ramp-down Rate*
TP to 100°C 3°C / sec 4°C / sec maximum
Time 25°C to Peak temperature max. 8 min.
All temperatures refer to the center of the package, measured on the top of the component
* slope calculation ΔT/Δt: Δt max. 5 sec; fulfillment for the whole T-range
0
0s
OHA04525
50
100
150
200
250
300
50 100 150 200 250 300
t
T
˚C
S
t
t
P
t
T
p
240 ˚C
217 ˚C
245 ˚C
25 ˚C
L
2010-07-22 8
SFH 4551
Published by
OSRAM Opto Semiconductors GmbH
Leibnizstraße 4, D-93055 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as as sured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be use d in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critical componen t is a component usedin a life-support device or syste m whose failure can reasonably be expected
to cause the failure of that life-support devic e or system, or to a ffect its safety or e ffectiveness of that device or system.
2 Life support devices or syste ms are intended (a) to be implanted in the human body, o r (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered .