ZXM64P03X
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ZXM64P03X
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS Max RDS(on) Max ID
T
A
= 25°C
-30V 75mΩ @ VGS = -10V -3.8A
100mΩ @ VGS = -4.5V -3.3A
Description
This MOSFET utilizes a unique structure that combines the benefits
of low on-resistance with fast switching speed, making it ideal for
high-efficiency power management applications.
Applications
• DC - DC converters
• Power management functions
• Disconnect switches
• Motor control
Features
• Fast switching speed
• Low on-resistance
• Low threshold
• Low gate drive
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: MSOP8
• Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish; Solderable per MIL-STD-202,
Method 208
• Weight: 0.028 grams (approximate)
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
ZXM64P03XTA ZXM64P03 7 12 1,000 Units
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Top View Equivalent Circuit
ZXM64P03 = Product Type Marking Code
D
S
G
Top View
Pin Out
MSOP8
ZXM64P03X
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current VGS = 4.5V TA = +25°C (Note 5)
TA = +70°C (Note 5) ID -3.8
-3.0 A
Pulsed Drain Current (Note 7) IDM -1.9 A
Continuous Source Current (Body Diode) (Note 6) IS -2.3 A
Pulsed Source Current (Body Diode) (Note 7) ISM -19 A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Linear Derating Factor PD 1.1
8.8 W
mW/°C
Power Dissipation (Note 6)
Linear Derating Factor PD 1.8
14.4 W
mW/°C
Thermal Resistance, Junction to Ambient (Note 5) RJA 113 °C/W
Thermal Resistance, Junction to Ambient (Note 6) RJA 70 °C/W
Thermal Resistance, Junction to Ambient (Note 8) RJL 39.8 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
6. For a device surface mounted on FR4 PCB measured at t 10 se cs.
7. Repetitive rating pulse width limited by pulse current limited by maximum junction temperature.
8. Thermal resistance from junction to solder-point (at the end o f the Drain lead).
Thermal Characteristics
ZXM64P03X
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS -30 ⎯ ⎯ V ID = -250μA, VGS = 0V
Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -1 μA VDS = -30V, VGS = 0V
Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage VGS
(
th
)
-1.0 ⎯ ⎯ V ID = -250μA, VDS = VGS
Static Drain-Source On-Resistance (Note 9) RDS (ON) ⎯ ⎯ 75 m VGS = -10V, ID = -2.4A
100 VGS = -4.5V, ID = -1.2A
Forward Transconductance (Notes 9 and 11) gfs 2.3 ⎯ ⎯ S VDS = -10V, ID = -1.2A
Diode Forward Voltage (Note 9) VSD ⎯ ⎯ -0.95 V
TJ = +25°C, IS = -2.4A, VGS = 0V
Reverse Recovery Time (Note 11) tr
r
⎯ 30.2 ⎯ ns TJ = +25°C, IF = -2.4A,
di/dt = 100A/μs
Reverse Recovery Charge (Note 11) Qr
r
⎯ 27.8 ⎯ nC
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance Ciss ⎯ 825 ⎯ pF VDS = -25V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss ⎯ 250 ⎯
Reverse Transfer Capacitance Crss ⎯ 80 ⎯
Turn-On Delay Time (Note 10) td
(
on
)
⎯ 4.4 ⎯
ns VDD = -15V, ID = -2.4A,
RG = 6.2, RD = 6.2
(Refer to test circuit)
Turn-On Rise Time (Note 10) t
r
⎯ 6.2 ⎯
Turn-Off Delay Time (Note 10) td
(
off
)
⎯ 40 ⎯
Turn-Off Fall Time (Note 10) tf ⎯ 29.2 ⎯
Total Gate Charge (Note 10) Q
g
⎯ ⎯ 46 nC VDS = -24V, VGS = -10V,
ID = -2.4A
(Refer to test circuit)
Gate-Source Charge (Note 10) Q
g
s ⎯ ⎯ 9
Gate-Drain Charge (Note 10) Q
g
d ⎯ ⎯ 11.5
Notes: 9. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
10. Switching characteristics are independent of operating junction temperature.
11. For design aid only, not subject to production testing.
ZXM64P03X
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
MSOP-8
Dim Min Max Typ
A - 1.10 -
A1 0.05 0.15 0.10
A2 0.75 0.95 0.86
A3 0.29 0.49 0.39
b 0.22 0.38 0.30
c 0.08 0.23 0.15
D 2.90 3.10 3.00
E 4.70 5.10 4.90
E1 2.90 3.10 3.00
E3 2.85 3.05 2.95
e - - 0.65
L 0.40 0.80 0.60
a 0° 8° 4°
x - - 0.750
y - - 0.750
All Dimensions in mm
Dimensions Value (in mm)
C 0.650
X 0.450
Y 1.350
Y1 5.300
A
A1
A2
e
Seating Plane
Gauge Plane
L
See Detail C
Detail C
c
a
E1
E3
A3
1
E
y
x
D
b
0.25
4x10°
4x10°
X C
Y
Y1
ZXM64P03X
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