©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE13009F
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse T est: PW≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
VCBO Collector-Base Voltage 700 V
V CE O Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 9 V
IC Collector Current (DC) 12 A
ICP Collector Current (Pulse) 24 A
IB Base Current 6 A
PC Collector Dissipation (TC=25°C) 50 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature -65 ~ 150 °C
Symbol Para m e ter Test Co ndition Min. Typ. Max. U nits
VCEO(sus) Collector-Emitter Sustaining Voltage IC = 10mA , IB = 0 400 V
IEBO Emitter Cut-off Current VEB = 7V, IC = 0 1 mA
hFE DC Current Gain VCE = 5V, IC = 5A
VCE = 5V, IC = 8A 8
6 40
30
VCE(sat) Collector-Emitter Saturation Voltage IC = 5A, IB = 1A
IC = 8A, IB = 1.6A
IC = 12A, IB = 3A
1
1.5
3
V
V
V
VBE(sat) Base-Emitter Saturat ion Voltage
IC = 5A, IB = 1A
IC = 8A, IB = 1.6A 1.2
1.6 V
V
Cob Output Capacitance VCB = 10V , f = 0.1MHz 180 pF
fT Current Gain Bandwidth Product VCE = 10V, IC = 0.5A 4 MHz
tON Turn ON Time VCC =125V, IC = 8A
IB1 = - IB2 = 1.6A
RL = 15,6Ω
1.1 µs
tSTG St orage Time 3µs
tF Fa ll Time 0.7 µs
High Voltage Switch Mode Application
• High Speed Switching
• Suitable for Switching Regulator and Motor Control
MJE13009F
1
1.Base 2.Collector 3.Emitter
TO-220F
©2001 Fairchild Semiconductor Corporation
MJE13009F
Rev. A1, February 2001
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Collector Output Capacitance Figure 4. Turn On Time
Figure 5. Turn Off Time Figure 6. Safe Operating Area
0.1 1 10 100
1
10
100
VCE = 5V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10 100
0.01
0.1
1
10
IC = 3 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.1 1 10 100 1000
1
10
100
1000
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
0.1 1 10 100
10
100
1000
10000 VCC=125V
IC=5IB
tD, VBE(off)=5V
tR
tR, tD [µs], TURN ON TIME
IC[A], COLLECTOR CURRENT
0.1 1 10 100
100
1000
10000
VCC=125V
IC=5IB
tF
tSTG
tSTG, tF [µs], TURN OFF TIME
IC[A], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
100
100µs
1ms
DC
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITT ER VOLTAGE
©2001 Fairchild Semiconductor Corporation
MJE13009F
Rev. A1, February 2001
Typical Characteristics (Continued)
Figure 1. DC current Gain
0 25 50 75 100 125 150 175
0
10
20
30
40
50
60
70
PC[W], POWER DIS SIPATION
Tc[oC], CASE TEMPERATURE
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE13009F
Dimensions in Millimeters
(7.00) (0.70)
MAX1.47
(30°)
#1
3.30
±0.10
15.80
±0.20
15.87
±0.20
6.68
±0.20
9.75
±0.30
4.70
±0.20
10.16
±0.20
(1.00x45°)
2.54
±0.20
0.80
±0.10
9.40
±0.20
2.76
±0.20
0.35
±0.10
ø3.18
±0.10
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
0.50
+0.10
–0.05
TO-220F
©2001 Fairchild Semiconductor Corporation Rev. G
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