Philips Semiconductors Product specification ee ee eee ee ee PowerMOS transistor BUK475-200A/B isolated version of BUK455-200A/B Cerner rere ere ee er eee eee GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL | PARAMETER MAX. | MAX. UNIT field-effect power transistor in a plastic full-pack envelope. The BUK475 -200A | -200B device is intended for use in Switched Vos Drain-source voltage 200 200 Vv Mode Power Supplies (SMPS), lp Drain current (DC) 7.6 7 A motor control, weiding, DC/DC and Prot Total power dissipation 30 30 Ww AC/DC converters, and in general T, Junction temperature 150 150 C purpose switching applications. Rosion) Drain-source on-state 0.23 0.28 Q resistance PINNING - SOT186A PIN CONFIGURATION SYMBOL PIN DESCRIPTION d | 1 [gate g a \ 2 |drain 4 x 3 |source 9 TN tr case |isolated $s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL |PARAMETER CONDITIONS MIN. MAX. UNIT Vos Drain-source voltage - : 200 Vv Vogr Drain-gate voltage Reg = 20 kQ - 200 Vv Veg Gate-source voltage - - 30 Vv -200A -200B Ip Drain current Oy Ths = 25C - 7.6 7 A lp Drain current (DC) Ths = 100 C - 48 4.4 A tom Drain current (pulse peak value) |T,,= 25C - 30 28 A Prot Total power dissipation Ths = 25C - 30 WwW stg Storage temperature - - 55 150 Cc ; Junction temperature - - 150 Cc THERMAL RESISTANCES SYMBOL |PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Rin jns Thermal resistance junction to with heatsink compound - - 4.17 | KW heatsink Rinja Thermal resistance junction to - 55 - KAW ambient June 1996 779 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistor BUK475-200A/B STATIC CHARACTERISTICS T,. = 25 C unless otherwise specified SYMBOL | PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Vierioss Drain-source breakdown Veg = OV; lp = 0.25 mA 200 - - Vv voltage Vescroy Gate threshold voltage Vos = Ves; lp = 1 MA 2.1 3.0 4.0 Vv pss Zero gate voltage drain current | Vps = 200 V; Veg = OV; T, = 25C - 1 10 HA loss Zero gate voltage drain current | Vpg = 200 V; Vag = 0 V; T, =125 C - 0.1 1.0 mA lass Gate source leakage current Ves = 80 Vi Vog = OV - 10 100 nA Rostony Drain-source on-state Ves = 10 V; BUK475-200A - 0.2 0.23 Q resistance ID=a7A BUK475-200B - 0.22 | 0.28 Q DYNAMIC CHARACTERISTICS T,s = 25 C unless otherwise specified SYMBOL | PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Os Forward transconductance Vos = 25 Vi 1Ib=7A 6 8.4 - S Cis Input capacitance Veg = 0 Vi Veg = 25 Vi f = 1 MHZ - 1400 | 1750 | pF oss Output capacitance - 190 | 250 pF Css Feedback capacitance - 55 80 pF toon Turn-on delay time Vpop = 30 V3 1p = 3A; - 18 30 ns {, Turn-on rise time Veg = 10 V; Res = 50 Q; - 35 60 ns ta ot Turn-off delay time Rogen = 50 - 85 120 ns Turn-off fall time - 35 50 ns Ly Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH from package to centre of die Ly Internal source inductance Measured from source lead 6 mm - 7.5 - nH from package to source bond pad ISOLATION LIMITING VALUE & CHARACTERISTIC Tas = 25 C unless otherwise specified SYMBOL |PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Visot R.M.S. isolation voltage from all | f = 50-60 Hz; sinusoidal - 2500 Vv three terminals to external wavetorm; heatsink R.H. < 65% ; clean and dustfree Cosi Capacitance from T2 to external |f = 1 MHz - 10 - pF heatsink REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS T,; = 25 C unless otherwise specified SYMBOL | PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT lor Continuous reverse drain - - - 7.6 A current loam Pulsed reverse drain current - - - 30 A Vep Diode forward voltage =7.6A;Veg= OV - 1.0 1.5 Vv t,. Reverse recovery time |- = 7.6 A; -di-/dt = 100 A/us; - 150 - ns QO, Reverse recovery charge Ves =OV; V_a=30V - 1.3 - uC June 1996 780 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistor BUK475-200A/B AVALANCHE LIMITING VALUE Ths = 25 C unless otherwise specified SYMBOL |PARAMETER CONDITIONS MIN. | TYP. | MAX. | UNIT Woss Drain-source non-repetitive Ip=14 A; Vp) S100V; - - 100 mJ unclamped inductive turn-off Veg = 10 Vi Reg = 500 energy Normalised Power Derating 120 110 100 90 80 70 60 50 40 30 20 - 10 ID/A 100 wen Ot oO 20 40 60 80 100-120, 140 1 10 100 4000 Ths/ VDS/V Fig.3. Safe operating area. T,,, = 25 C Ip & low = f(Vps); low Single pulse; parameter t, Fig.1. Normalised power dissipation. PD% = 100-P p/P p26 c= fT ng) ID% Normalised Current Derating Zth / (KW) 120 10 4 0 o.7 0.07 0.001 + 0 20 40 60 80 100, 120740 1E-O7 Ths / C Fig.2. Normalised continuous drain current. ID% = 100-IpIp 05 - = F(T); Conditions: Vag 2 10 V 1E-05 1E-O. TE-OF TE+01 t/s Fig.4. Transient thermal impedance. Zinn = Et); parameter D = t,/T June 1996 781 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistor BUK475-200A/B ID/A a 2 4 6 8 10 42 14 16 vDS/ Fig.5. Typical output characteristics, T, = 25 C. Ip = f(Vos); parameter Veg 4@ 20 0 4 8 12 16 20 24 28 ID/A Fig.8. Typical transconductance, Os = f(lp); Conditions: Vp, = 25 V 4.0 0.8 0.6 04 2 "O64 (UBUD iD/A Fig.6. Typical on-state resistance, T, = 25 C. psyony = flo); parameter Vas 24 a Normatised RDS{ON) = KTj} 0 60 -40 -20 0 20 406 60 80 100 120 140 Tj/ c Fig.9. Normalised drain-source on-state resistance. 4 = Roson/Rosromes c= f(T): lp = 7 Ai Vas = 10 V 0 2 4 6 8 10 VGS/V Fig.7. Typical transfer characteristics. Ip = f(Vas) ; conditions: Vp; = 25 V; parameter T, o 60 -40 20 0 20 40 6a 80 Tec 100 120 146 Fig.10. Gate threshold voltage. Vesrroy = f(T); conditions: Ip = 1 MA; Vos = Ves June 1996 782 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistor BUK475-200A/B IDSA SUB- THRESHOLD CONDUCTION YE-O1 a IF SA 1E-02 20 1E-03 1E-04 1E-05 1E-06 1 2 3 4 0 1 2 vas/ VSDS /V Fig.11. Sub-threshold drain current. Fig.14. Typical reverse diode current. Ibatl Vasy conditions: T,= 25 C; Vos = Veg Ie = {(Vsn5); conditions: Vz.= 0 V; parameter T, WDSS% 120 110 100 90 80 70 60 50 40 30 20 10 10- ot oO 20 40 20 40 60 80 > 190 120 140 vos /v Ths /C Fig.12. Typical capacitances, Cis. Coss, Css: Fig.15. Normalised avalanche energy rating. C = f(Vp5); conditions: Ve, = 0 V; f= 1 MHz Wos5% = f(T); conditions: |, = 14 A "es ti (\ wh \ | 4D/t00 L e TUT. ae Aor AGS | i shunt id + : 0 10 20 20 Ie oerne Fig.16. Avalanche eneroy test circuit Fig.13. Typical turn-on gate-charge characteristics. o 5. LEP: BV oY Co Vas = f(Qg); conditions: |p = 14 A; parameter Vos psy = 0.5 LE, BV yes BV ycs Vip) June 1996 783 Rev 1.200