MIXA225PF1200TSF
preliminary
Phase leg + free wheeling Diodes + NTC
XPT IGBT Module
5
6
4
12 8 7
10/11
3
9
Part number
MIXA225PF1200TSF
Backside: isolated
C25
CE(sat)
VV1.8
CES
360
1200
=
V= V
I= A
2x
Features / Ad vantages: Applications: Package:
● High level of integration - only one
power semiconductor module required
for the whole drive
● Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
● Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
● Temperature sense included
● SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
● AC motor drives
● Pumps, Fans
● Air-conditioning system
● Inverter and power supplies
● UPS
SimBus F
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
● Isolation Voltage: V~
3000
IXYS reserves the right to change limits, conditions and dimensions. 20121102bData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
MIXA225PF1200TSF
preliminary
-di /dt = A/µs
T = °C
V
CES
V1200
collector emitter voltage
collector emitter saturation voltage
T = 25°C
collect or current A
360
A
C
VJ
Symbol Definition
Ratings
typ. max.min.Conditions Unit
250
V
V
CE(sat)
total power dissipation 1100 W
collector emitter leakage current
6.5 V
turn-on delay time 60 ns
t
reverse bias safe operating area
A
V
GES
V±20
V
GEM
max. transient gate emitte r volta g e
T = °C
C
V
P
tot
gate emitter threshold voltage
RBSOA
500
±30
T = °C
T = °C
VJ
V
max. DC gate voltage
I
C25
I
C
T = 25°C
VJ
I = A; V = 15 V
CGE
T = 25°C
VJ
V
GE(th)
I
CES
I = mA; V = V
CGECE
V = V ; V = 0 V
CE CES GE
I
GES
T = 25°C
VJ
gate emitter leakage current V = ±20 V
GE
2.1
2.1
5.95.4
mA
0.3 mA
0.3
1.5
G(on)
total gate charge V = V; V = 15 V; I = A
CE
Q
GE C
690 nC
t
t
t
E
E
d(on)
r
d(off)
f
on
off
70 ns
280 ns
310 ns
20 mJ
27 mJ
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
V = V; I = A
V = ±15 V; R = Ω
CE C
GE G
V = ±15 V; R = Ω
GE G
V = V
CEmax
1200
short circuit safe operating area
µs
SCSOA
10T = °C
VJ
V = V; V = ±15 V
CE GE
short circuit duration
t
short circuit current
I
SC
SC
R = Ω; non-repetitive
G
900 A
R
thJC
thermal resistance junction to case 0.115 K/W
V
RRM
V1200
max. repetitive rev ers e voltage T = 25°C
VJ
T = 25°C
forward current A
265
A
C
185T = °C
C
I
F25
I
F
T = 25°C
forward voltage V
2.10
V
VJ
1.70T = 125°C
VJ
V
F
I = A
F
T = 25°C
reverse current mA
*
mA
VJ
*T = 125°C
VJ
I
RR RRM
T = 125°C
VJ
Q
I
t
rr
RM
rr
32 µC
250 A
340 ns
reverse recovery charge
max. reverse recovery current
reverse recovery time
V =
I = A; V = 0 V
F
FGE
E
rec
11.7 mJ
reverse recovery energy
R
R
thJC
thermal resistance junction to case 0.145 K/W
V = V
T = 25°C
C
T = 25°C
VJ
T = °C
VJ
VJ
225
9
225
225
225
225
3.3
3.3
3.3
600
900
3300
600
I
CM
1.8
R
thCH
thermal resistance case to heatsink 0.05 K/W
R
thCH
thermal resistance case to heatsink 0.05 K/W
* not applicable, see Ices value above
IGBT
Diode
600 V
V = V
CEmax
1200
80
80
80
80
125
125
125
125
125
µA
IXYS reserves the right to change limits, conditions and dimensions. 20121102bData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
MIXA225PF1200TSF
preliminary
Ratings
XXX XX-XXXXX
YYWWx
2D Data Matrix
Logo UL Part number Date Code Location
I
X
M
A
225
PF
1200
T
SF
Part number
IGBT
XPT IGBT
Gen 1 / std
Phase leg + free wheeling Diodes
Thermistor \ Temperature sensor
SimBus F
Module
=
=
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
VJ
°C
M
D
Nm6
mounting torque 3
T
stg
°C125
storage temperature -40
Weight g350
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp e r ature
Unit
M
T
Nm6
terminal torque 3
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
12.7
10.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current A
per terminal
150-40
terminal to terminal
SimBus F
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
0 25 50 75 100 125 150
102
103
104
105
R
[]
Typ. NTC resistance vs. temperature
TC[°C]
50/60 Hz, RMS; I ≤ 1 mA
ISOL
MIXA225PF1200TSF 512257Box 3MIXA225PF1200TSFStandard
R
pin-chip
resistance pin to chip 0.65 mΩ
2500
3000
ISOL
V = V
CEsat
+ 2·R·I
C
resp. V = V
F
+ 2·R·I
F
threshold voltage V
mΩ
V
0 max
R
0 max
slope resistance *
1.1
6
1.19
8.9
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
IGBT Diode
150 °C
* on die level
T = 25°
resistance kΩ
5.25
K
VJ
3375
R
25
B
25/50
5
4.75
temperature coefficient
Symbol Definition typ. max.min.Conditions Unit
Temperature Sensor NTC
IXYS reserves the right to change limits, conditions and dimensions. 20121102bData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
MIXA225PF1200TSF
preliminary
1,2
17
20,5
22
50
57,5
62
94,5
110
122
137
152
0,8
R2,5
0
7,25
11,06
33,92
37,73
60,59
64,4
87,26
7,75
0
3,75
57,96
0,46
10
11
98 7 6 5
1 2
4
3
5
6
4
12 8 7
10/11
3
9
Outlines SimBus F
IXYS reserves the right to change limits, conditions and dimensions. 20121102bData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
MIXA225PF1200TSF
preliminary
0123
0
50
100
150
200
250
300
350
400
450
0 100 200 300 400 500
0
10
20
30
40
50
0
25
50
75
100
125
01234
0
50
100
150
200
250
300
350
400
450
V
CE
[V]
I
C
[A]
Q
G
[nC]
V
GE
[V]
9V
11 V
56789101112
0
100
200
300
400
0 200 400 600 800
0
5
10
15
20
T
VJ
=25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
=125°C
13 V
E
[mJ]
Fig. 1 Typ. output characteristics
V
CE
[V]
I
C
[A]
V
GE
=15V
17 V
19 V
Fig. 2 Typ. output characteristics
I
C
[A]
Fig. 3 Typ. transfer characteristics
V
GE
[V]
Fig. 4 Typ. turn-on gate charge Fig. 5 Typ. switching energy
versus collector current
E
[mJ]
I
C
[A]
V
GE
=15V
T
VJ
= 125°C
I
C
= 225 A
V
CE
= 600 V
E
on
t
d(on)
t
r
R
G
=3.3
V
CE
=600 V
V
GE
= ±15 V
T
VJ
= 125°C
Erec(off)
t
[ns]
46810
10
20
30
50
100
150
E
rec(on)
E
on
Fig. 8 Typ. switching energy
versus gate resistance
R
G
[ ]
I
C
= 225 A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
0 100 200 300 400 500
0
10
20
30
40
50
60
70
0
100
200
300
400
500
600
700
Fig. 6 Typ. switching energy
versus collector current
E
[mJ]
I
C
[A]
E
off
t
d(off)
t
f
R
G
= 3.3
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
=125°C
t
[ns]
t
r
t
d
(on)
t
[ns]
E
off
[mJ]
46810
10
20
30
200
400
600
E
off
Fig. 9 Typ. switching energy
versus gate resistance
R
G
[ ]
I
C
= 225 A
V
CE
=600 V
V
GE
= ±15 V
T
VJ
= 125°C
t
f
t
d
(off)
t
[ns]
Fig. 7 Typical transient thermal
impedance junction to case
t[s]
Z
thJC
[K/W]
0.001 0.01 0.1 1 10
0.00
0.02
0.04
0.06
0.08
0.10
0.12
IGBT
IXYS reserves the right to change limits, conditions and dimensions. 20121102bData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
MIXA225PF1200TSF
preliminary
0.001 0.01 0.1 1 10
0.00
0.04
0.08
0.12
0.16
0.00.51.01.52.02.53.0
0
100
200
300
400
V
F
[V]
t[s]
I
F
[A]
Z
thJC
[K/W]
single pulse
Fig. 1 Typ. forward current
versus V
F
Fi
g
.7 T
y
p
. transient thermal im
p
edance
j
unctiontocase
Fig. 2 Typ. reverse recovery
characteristics
Fig. 4 Typ. reverse recovery
characteristics
Fig. 3 Typ. reverse recovery
characteristics
Fig. 6 Typ. recovery energy
E
rec
versus di
F
/dt
2600 2800 3000 3200 3400
320
340
360
380
400
420
440
t
rr
[ns]
2600 2800 3000 3200 3400
190
200
210
220
230
240
250
I
rr
[A]
2600 2800 3000 3200 3400
10.0
10.5
11.0
11.5
12.0
E
rec
[mJ]
di
F
/dt [A/μs] di
F
/dt [A/μs]
0 100 200 300 400 500
0
10
20
30
40
50
60
I
F
[A]
Q
rr
[μC]
10
6.8
5.0
3.3
10
6.8
5.0
3.3
di
F
/dt [A/μs]
T
VJ
= 125°C
T
VJ
= 25°C
I
F
=225A
V
R
= 600 V
T
VJ
= 125°C
I
F
= 225 A
V
R
= 600 V
T
VJ
=125°C
V
R
=600 V
R
G
= 3.3
T
VJ
= 125°C
0 100 200 300 400 500
100
150
200
250
300
Fig. 3 Typ. reverse recovery
characteristics
I
F
[A]
I
rr
[A]
V
R
=600 V
R
G
= 3.3
T
VJ
= 125°C
I
F
= 225 A
V
R
= 600 V
T
VJ
=125°C
Diode
IXYS reserves the right to change limits, conditions and dimensions. 20121102bData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
