. DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS PC1100, u.PC1150 DUAL SWITCHING REGULATOR CONTROL CIRCUIT DESCRIPTION The wPC1100, wPC1150 are PWM type dual switching regulator control circuits which incorporate 2.5 V voltage reference, variable frequency oscillator, two sets of synchronized switching control circuits, timer latch short protection circuit and ON/OFF control circuit on a single monolithic chip. The uPC1100, nPC1150 feature low supply voltage operation, low stand- by current and low supply current therefore, these ICs are the optimum choise for battery operated portable equipments power supply and other DC-DC converter applications. Two ICs are available in accordance with short protection method. FEATURES Two outputs synchronized operation Wide supply voltage range 3.6 V = Vcc = 40 V Low stand-by and supply current stand-by mode; 2.2 mA, operation mode; 2.5 mA Timer tatch short protection circuit uPC1100 Two outputs cut off when one channel becomes short state. uPC1150 Only short channel! cuts off. Internal ON/OFF control circuit ORDERING INFORMATION PART NUMBER PACKAGE QUALITY GRADE uPC1100C 16 pin Plastic DIP (300 mil} pPC1100GS 16 pin Plastic SOP (300 mil) Standard pPC1150C 16 pin Plastic DIP (300 mil) uPC1150GS 16 pin Plastic SOP (300 mil) Please refer to Quality grade on NEC Semiconductor Devices (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. Document No. IC-2122A (O.D.No. |C-7542) Date Published April 1994 M Printed in Japan NEC Corporation 1987NEC uPC1100, .PC1150 CONNECTION DIAGRAM (Top View) Dead REF Feed Time OUT DLY 2 IN2. Back Cntroly OUT2 Vcc P| fel fa) fol fe] [a] pol [5] VREF > 1/2 Osc > > || Wee wee i 4 RT ly, ON/OFF Feed Dead OUT; GND Control Back; Time Control, ABSOLUTE MAXIMUM RATING (T, = 25 C) PARAMETER SYMBOL RATING UNIT Supply Voltage Vec 41 Vv Error Amplifier Input Voltage v\ 20 Vv Output Voltage Vo 41 Vv Output Current lo 25 mA Total Power Dissipation C Package P+4 1 000 mw Total Power Dissipation GS Package Pro 694 mw Operating Temperature Range Topt 20 to +85 c Storage Temperature Range Tstg 55 to +150 c RECOMMENDED OPERATING CONDITIONS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Supply Voltage Vcc 3.6 40 Vv Error Amplifier Input Voltage VI 1.05 1.45 Vv Output Voltage Vo 40 Vv Output Current lo 20 mA Current into Feed-back Terminal lFT 45 uA Timing Capacitor CT 150 15 000 pF Timing Resistor Rt 5.1 100 kQ Oscillator Frequency fose 1 500 kHzNEC uPC1100, .-PC1150 ELECTRICAL CHARACTERISTICS (T, = 20 C to +85 C, Vcc = 6 V, fose = 100 kHz) BLOCK PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Start-up Voltage VCCI(L to H) 2.72 VV | Tg=25 C, IREF=O.1 MA Und Voltage Stop Voltage VCC(H to L) 2.60 V | T9=25 C, IREF=0.1 mA Sooneut Hysteresis Voltage Vu 80 120 mV | Tg=25 C, IREF=0.1 mA Reset Voltage (Vcc) VR 23 2.7 V | Ta=25 C, IREF=0.1 mA Reference Voltage VREF 2.40 2.50 2.60 Vv IREF=1MA Line Regulation REGin 2 12.5 mV | 3.6 V=Vcc=40 V Refer- ence _| Load Regulation REG. 1 75 mV |0.1mASIREFS1 mA Voltage | 0.1 1 % | -20CSTg<+25C, IREF=0 Section | Temperature Coefficient AVrRer/AT : ~ 1 0.2 1 % | +25CSTqs+85 C, IREF=0 Short Circuit Current lo short 2.5 10 30 mA | VREF=O Oscillation Frequency fose 80 100 120 kHz | CT=680 pF, RT=11 kQ Oscil- | Frequency Line Regulation AflAVcc 0.1 % | Ta25 C, 3.6 VSVcC=40 V lator Section 5 2 % 20 CETg <+25 C Frequency Temperature Coefficient | 4f/AT S 3 5 2 % +25 CST, S+85 C Dead- Input Bias Current IBD 1 uA Care ot Low Level Threshold Voltage VTH(L) 1.20 1.45 Vv | On-duty 0 % Section | High Level Threshold Voltage VTH(H) 2.05 2.25 Vv On-duty 100 % Input Offset Voltage VIO 10 10 mV | Vo Amp=1.25 V Input Offset Current ho 100 100 nA | VO Amp=1.25 V input Bias Current ip 160 500 nA | VO Amp=1.25 V Common Mode Input Voltage ViCcR 1.05 1.45 Vv 3.6 V=Vcc=40 Vv Error Open Loop Voltage Gain Ay 70 80 dB | Ruf=R2z00 kQ Amel | Unity Gain Bandwidth funity 1.5 MHz Section | Common Mode Rejection Ratio CMR 60 80 dB Vomt VREF-O.1 Vv Maximum Output Voltage em Vom 1.0 v Output Sink Current losINK 0.5 1.6 mA | Vip=0.1 V, VoaMp=1.15 V Output Source Current IOSOURCE ~45 70 HA | Vip=0.1 V, VoAMpP=2.3 V | 100 BA | Vo=40 V Collector Cutoff Current LEAK ILEAK(OFF} 10 HA | Vec=0, Vo=40 V setout Collector Saturation Voltage VOSAT 0.95 1.3 Vv !Q=20 mA Output Voltage Rise Time ty 150 ns | Rqg=500 2 Output Voltage Fall Time tf 180 ns RgQ=500 2 Short Input Sense Voltage VTH 2.05 2.25 2.45 Vv Tg=25 C Circuit UV Sense Voltage (15 pin) Vuv 0.5 0.6 0.8 Vv | Ta=25C rotec- tion Source Current louv 10 15 25 HA | Tg=25 C, Vp_y=0 Section [Delay Time tpLy 55 ms | CpoLy=1 uF oor ON/OFF Threshold Voltage VCTL 0.6 1.0 1.2 V| VRer=0 ontro Section | Stand-by Current Iccl 10 HA | VON/OFF (4 pin)=0 VON/OFF (4 pin)=1.5 V, tand-by Current I 2 . Stand-by Curren CCs 2 3.1 mA No Output Voltage Total E Bias Current Ica 25 3.4 mA C7=680 pF, RT=11 kQ, VON/OFF (4 pin)=1.5 VNEC uPC1100, u.PC1150 TYPICAL CHARACTERISTICS (T, = 25 C, Vcc = 6 V) PTTotal Power DissipationW VrerReference VoltageV foscOscillation Frequency Hz TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1.2 1.0 <b, 2, 08 % 2 o S Pa S Yt04 0.6 S225, Ne Po, 04 ~ 0.2 85C 0 25 50 75 100 125 TagAmbient Tem peratureC REFERENCE VOLTAGE vs. AMBIENT TEMPERATURE 2.53 IREF=0 2.52 2.51 . SN, 2.48 2.47 25 0 25 50 75 100 TaAmbient TemperatureC OSCILLATION FREQUENCY vs. TIMING RESISTANCE, CAPACITANCE 1M 100 k 10k 1k 1k 5k 10k 50k 100k 500k 1M RTTiming Resistance0Q, VrerReference VoltageV IcCs Bias CurrentmA TosceOscillation Periodys STAND-BY CURRENT vs. SUPPLY VOLTAGE 4 VON /OFF= 1.5 V 3 Leeann | annem) Lenn 2 1 0 10 20 30 40 Vcc Supply VoltageV REFERENCE VOLTAGE vs. SUPPLY VOLTAGE 3.0 IREF=0 2.5 | 2.0 | 15 | 10 | 0.5 | 0 10 20 30 40 VcocSupply VoltageV OSCILLATION PERIOD vs. Loz TIMING CAPACITANCE RT=5.1 kQ 10 1 1071 10? 103 104 105 CTTiming Capacitance pFNEC uPC1100, .PC1150 OSCILLATION FREQUENCY DEVIATION vs. AMBIENT TEMPERATURE +4 CT =680 pF & RT =11kQ | +3 Cc 2 ao 3 +2 YD a 3 +1 c oD a & oO uu -1 NS s g -2 9 7 a wl ~3 q 4 25 0 25 50 75 100 TaAmbient TemperatureC > | LOW LEVEL, HIGH LEVEL THRESHOLD % VOLTAGE vs. AMBIENT TEMPERATURE oO CT=680 pF > RT=11 kQ oa So 2.1 x= no 2 c 2.0 Oo > oO 4 & 19 = L = ae 3B 15 2 ee ee la x= = > 2 13 a 25 0 25 50 75 100 = TgAmbient TemperatureC 100 DELAY TIME vs. DELAY CAPACITANCE 10 TpLyDelay Timems 0.1 0.01 0.1 1 10 Cp_yDelay Capacitance wF OUTPUT SATURATION VOLTAGE vs. OUTPUT CURRENT 2.0 n - NS 4 ~o wore aw ot Vo sat~Output Saturation VoltageV S - 0 10 20 30 40 50 lg Output CurrentmA LOW LEVEL, HIGH LEVEL THRESHOLD VOLTAGE vs. TIMING CAPACITANCE b Rp=5.1 kQ N iN) N o we oO r n \ = NR 10? 10 10* 108 CTTiming CapacitancepF VTH(L) VTH(H) Low Level, High Level Threshold VoltageV GAIN, PHASE vs. FREQUENCY a oO +180 p Q +135 w oO +90 Np Oo +45 Ay GaindB e Qo @Phasedeg -45 -10 -90 20 135 30 180 1k 10k 100 k 1M 10M f Frequency HzNEC uPC1100, .PC1150 OPERATING WAVEFORMS Supply Voltage 2.7V--x5 Feed-Back Pin Voltage an | ___ Dead-Time Control Pin Voltage 2.05 V~----- ~~ x A A. | L | | ' ! i , 1! vt Oscillation | 1 | 1 Ly Waveform 1.45 V----44 1 {Vi I | ; 1 I 1 I I | | ! Ov Th ya 1 i tf 7 i ft oat 1! i i 1 | tt ; i | 1y iy 4 L Ul | yd | \ Ly yu ON/OFF Control 1.2v--=-I4====E Pott 1 ; ott iF Pin Voltage Vy \ io i 1 ri it OVem tmnt Mo 1 UV Sense 0.6V-~-bp--= +4 more popaa potas bane tt | a yr Voltage 1 | i i | toy 4 Why OV + _ iF 11 1! | ; | Pty 11 bot iit vl ly 1 | roid Lt i yt Output | | | | Waveform L LU J J ! TYPICAL APPLICATION CIRCUIT Voc =6 V to 9V +5 V, 5 V Dual Power Supply ? 0.047 4.7 kQ 30 ke wv ara |g 50k2 > 100 uF 0.1 pe |e | 1 2SB1261 Vo=5V lo=200 mA 220 uF 4.7 0.1 uF kQ Oe. OSL Bel LL Bol T oo | | bat cab be Ds (I: re OSC * I i} 2J bi LI bi lt! vb 0.047 uF 25B1261 \o LESS 4 Vo=+5V 180 nH Zz 470 Q wy 19<200 mA 220 uF 20 kQ 470 2 ON/OFF Control 4.7 kQ SowsNEC uPC1100, u.PC1150 PACKAGE DIMENSIONS 16 PIN PLASTIC DIP (300 mil} pPC1100C, uPC1150C 16 9 Of) fr) fi) 1 F) TI \ _ J LICL UF tL LI DI Uu 1 8 A K peng C8 M O~15 P16C100300B NOTES ITEM MILLIMETERS INCHES 1) Each lead centerline is located within 0.25 mm (0.01 inch) of its true position (T.P.) at A 20.32 MAX. 0.800 MAX. maximum material condition. . B 1.27 MAX. 0.050 MAX. Cc 2.54 (T.P.) 0.100 (T.P.) 2) Item K to center of leads when formed +0004 parallel. D 0.50*-1 0.020 -0:005 F 1.1 MIN. 0.043 MIN. G 3.5708 0.138*-017 H 0.51 MIN. 0.020 MIN. I 4.31 MAX. 0.170 MAX. J 5.08 MAX. 0.200 MAX. K 7.62 (T.P.) 0.300 (T.P.} L 6.5 0.256 M 0.25 78:08 0.01078:888 N 0.25 0.01 P 1.1 MIN. 0.043 MIN.NEC 16 PIN PLASTIC SOP (300 mil) uPC1100GS, yPC1150GS HAR ABARG O HoobERES A H wo | | J | LL 1 ARTE ETE 7 v Ww | | I I | B D P16GM-50-300B-3 NOTE ITEM| MILLIMETERS INCHES Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at A 10.46 MAX. 0.412 MAX. maximum material condition. B 0.78 MAX. 0.031 MAX. Cc 1.27 (T.P.) 0.050 (T.P.) D 0.408-42 0.01678-984 E 0.1+0.1 0.004+0.004 F 1.8 MAX. 0.071 MAX. G 1.55 0.061 H 7.7+0.3 0.303+0.012 | 5.6 0.220 J 14 0.043 K 0.201812 0.00875 '099 L 0.6+0.2 0.024:608 M 0.12 0.005 N 0.10 0.004 uPC1100, u.PC1150 detail of lead end 7 3 230NEC uPC1100, .-PC1150 RECOMMENDED SOLDERING CONDITIONS The following conditions (see table below) must be set when soldering this product. Please consult with our sales offices in case other soldering process is used, or in case soldering is done under different conditions. TYPES OF SURFACE MOUNT DEVICE For more details, refer to our document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (1E1-1207). MPC1100GS, uPC1150GS Soldering process Soldering conditions Symbol Peak packages surface temperature: 230 C or below, Ref} ime: 3 | 10 i Infrared ray reflow eflow time: 30 seconds or below (2 C or higher}, 1R30-00-1 Number of reflow process: 1, Exposure limit*: None Peak packages surface temperature: 215 C or below, . . . ves Reflow time: 40 seconds or below (200 C or higher), VP15-00-1 Number of reflow process: 1, Exposure limit: None *: Exposure limit before soldering after dry-pack package is opened. Storage conditions: 25 C and relative humidity at 65 % or less. Note: Do not apply more than a single process at once, except for Partial heating method. TYPES OF THROUGH HOLE MOUNT DEVICE PC1100C, uPC1150C Soldering process Soldering conditions Symbol Wave soldering Solder temperature: 260 C or below, Flow time: 10 seconds or below REFERENCE Document Name Document No. Quality control of NEC semiconductor devices TEM-1202 Quality control guide of semiconductor devices MEI-1202 Assembly manual of semiconductor devices IE1l-1207 NEC semiconductor device reliability/quality control system IEI-1212NEC uPC1100, .PC1150 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of e device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6