New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS (R) * Trench MOS Schottky technology ITO-220AB TO-220AB * Low forward voltage drop, low power losses * High efficiency operation 2 3 1 1 V20120S 2 * Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) 3 * Solder bath temperature 275 C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) VF20120S PIN 1 PIN 2 PIN 1 PIN 3 CASE PIN 3 TO-263AB PIN 2 * Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TO-262AA K TYPICAL APPLICATIONS K For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. A NC 1 VB20120S NC 3 MECHANICAL DATA VI20120S K HEATSINK A 2 PIN 1 PIN 2 PIN 3 K Case: TO-220AB, TO-262AA 20 A VRRM 120 V IFSM 200 A VF at IF = 20 A 0.73 V TJ max. 150 C TO-263AB and Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade PRIMARY CHARACTERISTICS IF(AV) ITO-220AB, Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL V20120S VF20120S VB20120S VI20120S UNIT Maximum repetitive peak reverse voltage VRRM 120 V Maximum average forward rectified current (fig. 1) IF(AV) 20 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 200 A Non-repetitive avalanche energy at TJ = 25 C, L = 60 mH EAS 130 mJ Peak repetitive reverse current at tp = 2 s, 1 kHz, TJ = 38 C 2 C IRRM 0.5 A Voltage rate of change (rated VR) dV/dt 10 000 V/s Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min VAC 1500 V TJ, TSTG - 40 to + 150 C Operating junction ans storage temperature range Document Number: 88993 Revision: 25-Jun-09 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS Breakdown voltage Instantaneous forward voltage (1) Reverse IR = 1.0 mA TA = 25 C IF = 5 A IF = 10 A IF = 20 A TA = 25 C SYMBOL TYP. MAX. VBR 120 (minimum) - 0.57 0.71 0.99 1.12 UNIT V VF IF = 5 A IF = 10 A IF = 20 A TA = 125 C 0.50 0.61 0.73 0.81 VR = 90 V TA = 25 C TA = 125 C 10 6 - A mA VR = 120 V TA = 25 C TA = 125 C 14 300 30 A mA current (2) IR Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL V20120S VF20120S VB20120S VI20120S UNIT RJC 2 4 2 2 C/W Typical thermal resistance ORDERING INFORMATION (Example) PACKAGE UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V20120S-E3/4W PREFERRED P/N 1.88 4W 50/tube Tube ITO-220AB VF20120S-E3/4W 1.75 4W 50/tube Tube TO-263AB VB20120S-E3/4W 1.38 4W 50/tube Tube TO-263AB VB20120S-E3/8W 1.38 8W 800/reel Tape and reel TO-262AA VI20120S-E3/4W 1.45 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 20 25 20 V(B,I)20120S 15 D = 0.5 18 Average Power Loss (W) Average Forward Current (A) Resistive or Inductive Load VF20120S 10 5 16 D = 0.2 14 12 D = 1.0 D = 0.1 10 8 T 6 4 2 Mounted on Specific Heatsink 0 D = 0.8 D = 0.3 D = tp/T tp 0 0 25 50 75 100 125 150 175 0 5 10 15 20 25 Case Temperature (C) Average Forward Current (A) Figure 1. Maximum Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88993 Revision: 25-Jun-09 New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor 10 TA = 150 C Transient Thermal Impedance (C/W) Instantaneous Forward Current (A) 100 TA = 125 C 10 TA = 100 C 1 TA = 25 C 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V(B,I)20120S 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Figure 3. Typical Instantaneous Forward Characteristics Figure 6. Typical Transient Thermal Impedance 10 Transient Thermal Impedance (C/W) 100 Instantaneous Reverse Current (mA) 1 0.1 0.01 0.1 0 Junction to Case TA = 150 C 10 TA = 125 C 1 TA = 100 C 0.1 TA = 25 C 0.01 0.001 10 20 30 40 50 60 70 80 90 100 Junction to Case 1 VF20120S 0.1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Figure 7. Typical Transient Thermal Impedance Junction Capacitance (pF) 10 000 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 10 0.1 1 10 100 Reverse Voltage (V) Figure 5. Typical Junction Capacitance Document Number: 88993 Revision: 25-Jun-09 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB ITO-220AB 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) PIN 2 3 0.160 (4.06) 0.140 (3.56) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 2 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7 REF. 0.350 (8.89) 0.330 (8.38) 3 7 REF. 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.560 (14.22) 0.530 (13.46) 0.035 (0.89) 0.025 (0.64) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.671 (17.04) 0.651 (16.54) PIN 1 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.600 (15.24) 0.580 (14.73) 0.603 (15.32) 0.573 (14.55) 7 REF. 0.076 (1.93) REF. 45 REF. 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 0.190 (4.83) 0.170 (4.32) 0.404 (10.26) 0.384 (9.75) 0.415 (10.54) MAX. 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) TO-262AA 0.185 (4.70) 0.175 (4.44) 0.411 (10.45) MAX. 0.250 (6.35) MIN. 30 (TYP.) (REF.) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) K 0.950 (24.13) 0.920 (23.37) 1 PIN 2 0.510 (12.95) 0.470 (11.94) 0.401 (10.19) 0.381 (9.68) 0.350 (8.89) 0.330 (8.38) 3 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) 0.104 (2.65) 0.096 (2.45) 0.035 (0.90) 0.028 (0.70) 0.022 (0.56) 0.014 (0.35) 0.205 (5.20) 0.195 (4.95) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 (10.66) MIN. K 0.360 (9.14) 0.320 (8.13) NC K A 0.624 (15.85) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) www.vishay.com 4 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.33 (8.38) MIN. 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88993 Revision: 25-Jun-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000