V20120S, VF20120S, VB20120S & VI20120S
Vishay General Semiconductor
Document Number: 88993
Revision: 25-Jun-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
New Product
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB,
and TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV) 20 A
VRRM 120 V
IFSM 200 A
VF at IF = 20 A 0.73 V
TJ max. 150 °C
TO-220AB
V20120S VF20120S
VI20120SVB20120S
PIN 1 PIN 2
PIN 3 K
1
23
1
K
23
TO-263AB
NC
A
K
HEATSINK
NC
A
K
PIN 1 PIN 2
PIN 3
PIN 1 PIN 2
CASE
PIN 3
TO-262AA
TMBS ®
ITO-220AB
123
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL V20120S VF20120S VB20120S VI20120S UNIT
Maximum repetitive peak reverse voltage VRRM 120 V
Maximum average forward rectified current (fig. 1) IF(AV) 20 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load IFSM 200 A
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH EAS 130 mJ
Peak repetitive reverse current
at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C IRRM 0.5 A
Voltage rate of change (rated VR) dV/dt 10 000 V/µs
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min VAC 1500 V
Operating junction ans storage temperature range TJ, TSTG - 40 to + 150 °C
New Product
V20120S, VF20120S, VB20120S & VI20120S
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88993
Revision: 25-Jun-09
2
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Breakdown voltage IR = 1.0 mA TA = 25 °C VBR 120 (minimum) -
V
Instantaneous forward voltage (1)
IF = 5 A
IF = 10 A
IF = 20 A
TA = 25 °C
VF
0.57
0.71
0.99
-
-
1.12
IF = 5 A
IF = 10 A
IF = 20 A
TA = 125 °C
0.50
0.61
0.73
-
-
0.81
Reverse current (2)
VR = 90 V TA = 25 °C
TA = 125 °C
IR
10
6
-
-
µA
mA
VR = 120 V TA = 25 °C
TA = 125 °C
-
14
300
30
µA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL V20120S VF20120S VB20120S VI20120S UNIT
Typical thermal resistance RθJC 2422°C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB V20120S-E3/4W 1.88 4W 50/tube Tube
ITO-220AB VF20120S-E3/4W 1.75 4W 50/tube Tube
TO-263AB VB20120S-E3/4W 1.38 4W 50/tube Tube
TO-263AB VB20120S-E3/8W 1.38 8W 800/reel Tape and reel
TO-262AA VI20120S-E3/4W 1.45 4W 50/tube Tube
Figure 1. Maximum Forward Current Derating Curve
Case Temperature (°C)
Average Forward Current (A)
20
25
15
10
5
0
0 25 50 75 100 125 150 175
VF20120S
V(B,I)20120S
Resistive or Inductive Load
Mounted on Specific Heatsink
Figure 2. Forward Power Loss Characteristics
D = 0.1
D = 0.2
D = 0.3
D = 0.5 D = 0.8
D = 1.0
20
18
16
14
12
10
8
6
4
2
0
0 5 10 15 20 25
Average Forward Current (A)
Average Power Loss (W)
D = tp/T tp
T
New Product
V20120S, VF20120S, VB20120S & VI20120S
Vishay General Semiconductor
Document Number: 88993
Revision: 25-Jun-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Characteristics
Figure 5. Typical Junction Capacitance
0.1
1
10
100
0 0.2 0.4 0.6 0.81.0 1.2 1.4 1.6
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
A
= 25 °C
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 100 °C
10
100
1000
10 000
0.1 1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Figure 6. Typical Transient Thermal Impedance
Figure 7. Typical Transient Thermal Impedance
0.1
1
10
0.01 0.1 1 10 100
Junction to Case
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
V(B,I)20120S
0.1
1
10
0.01 0.1 1 10 100
Junction to Case
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
VF20120S
New Product
V20120S, VF20120S, VB20120S & VI20120S
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88993
Revision: 25-Jun-09
4
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.113 (2.87)
0.103 (2.62)
0.370 (9.40)
0.360 (9.14)
0.415 (10.54) MAX.
0.635 (16.13)
0.625 (15.87)
PIN
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45) 0.205 (5.20)
0.195 (4.95)
0.035 (0.90)
0.028 (0.70)
0.154 (3.91)
0.148 (3.74)
13
2
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.603 (15.32)
0.573 (14.55)
ITO-220AB
0.076 (1.93) REF.
45° REF.
PIN
321
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
0.600 (15.24)
0.580 (14.73)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.191 (4.85)
0.171 (4.35)
0.671 (17.04)
0.651 (16.54)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.110 (2.79)
0.100 (2.54)
7° REF.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.110 (2.79)
0.100 (2.54)
0.190 (4.83)
0.170 (4.32)
7° REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.350 (8.89)
0.330 (8.38)
TO-262AA
0.401 (10.19)
0.381 (9.68)
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.045 (1.14)
0.110 (2.79)
0.100 (2.54)
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.35)
K
123
0.055 (1.40)
0.047 (1.19)
0.510 (12.95)
0.470 (11.94)
PIN
0.411 (10.45) MAX.
0.250 (6.35) MIN.
30° (TYP.)
(REF.)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.104 (2.65)
0.096 (2.45)
0.057 (1.45)
0.045 (1.14)
0.160 (4.06)
0.140 (3.56)
0.950 (24.13)
0.920 (23.37)
TO-263AB
0.670 (17.02)
0.591 (15.00)
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.15 (3.81) MIN.
0.33 (8.38) MIN.
0.42 (10.66) MIN.
NCA
K
K
0.140 (3.56)
0.110 (2.79)
0.021 (0.53)
0.014 (0.36)
0.110 (2.79)
0.090 (2.29)
0 to 0.01 (0 to 0.254)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.190 (4.83)
0.160 (4.06)
0.205 (5.20)
0.195 (4.95)
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.360 (9.14)
0.320 (8.13)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
Mounting Pad Layout
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Revision: 02-Oct-12 1Document Number: 91000
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