FDN360P Single P-Channel, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. * -2 A, -30 V. RDS(ON) = 80 m @ VGS = -10 V RDS(ON) = 125 m @ VGS = -4.5 V * Low gate charge (6.2 nC typical) * High performance trench technology for extremely low RDS(ON) . These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. * High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. D D S G TM SuperSOT -3 Absolute Maximum Ratings Symbol S G TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage 20 V ID Drain Current -2 A PD Power Dissipation for Single Operation - Continuous (Note 1a) - Pulsed TJ, TSTG -10 (Note 1a) 0.5 (Note 1b) 0.46 Operating and Storage Junction Temperature Range -55 to +150 W C Thermal Characteristics Thermal Resistance, Junction-to-Ambient RJA (Note 1a) Thermal Resistance, Junction-to-Case RJC (Note 1) 250 C/W 75 C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 360 FDN360P 7'' 8mm 3000 units 2003 Fairchild Semiconductor Corporation FDN360P Rev F1 (W) FDN360P May 2003 Parameter Symbol TA = 25C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics VGS = 0 V, ID = -250 A BVDSS BVDSS TJ Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA -3 V On Characteristics -30 ID = -250 A, Referenced to 25C VDS = -24V, V -22 VGS = 0 V mV/C -1 A -10 VDS = -24V, VGS = 0 V, TJ=55C (Note 2) VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance -1 -1.9 ID(on) On-State Drain Current VGS = -10 V, VDS = -5 V gFS Forward Transconductance VDS = -5 V, ID = -2 A 5 S VDS = -15 V, f = 1.0 MHz V GS = 0 V, 298 pF 83 pF 39 pF 4 VGS = -10 V, ID = -2 A VGS = -10 V, ID = -2 A, TJ=125C VGS= -4.5 V, ID = -1.5A 63 90 100 mV/C 80 136 125 -10 m A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) tf Qg Total Gate Charge (Note 2) 6 12 ns 13 23 ns Turn-Off Delay Time 11 20 ns Turn-Off Fall Time 6 12 ns 6.2 9 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -15 V, VGS = -10 V, VDS = -15V, VGS = -10 V ID = -1 A, RGEN = 6 ID = -3.6 A, 1 nC 1.2 nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = -0.42 A Voltage (Note 2) -0.8 -0.42 A -1.2 V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 250C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% FDN360P Rev F1 (W) FDN360P Electrical Characteristics FDN360P Typical Characteristics 15 2 -6.0V -5.0V V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS = -10V -4.5V 12 9 -4.0V 6 -3.5V 3 -3.0V 1.8 VGS = -3.5V 1.6 1.4 -4.0V 1.2 -4.5V 1 -5.0V -6.0V 0.8 -7.0V -10V 0.6 0 0 1 2 3 4 0.4 5 0 -VDS, DRAIN TO SOURCE VOLTAGE (V) 3 6 9 12 15 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.3 ID = -2A VGS = -10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 ID = -1A 0.25 0.2 TA = 125oC 0.15 0.1 TA = 25oC 0.05 -50 -25 0 25 50 75 100 125 150 2 4 TJ, JUNCTION TEMPERATURE (oC) Figure 3. On-Resistance Variation with Temperature. 8 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 10 -IS, REVERSE DRAIN CURRENT (A) 25oC TA = -55oC VDS = -5.0V -ID, DRAIN CURRENT (A) 6 -VGS, GATE TO SOURCE VOLTAGE (V) 8 125oC 6 4 2 0 VGS = 0V 1 TA = 125oC 0.1 25oC -55oC 0.01 0.001 0.0001 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDN360P Rev F1 (W) FDN360P Typical Characteristics 400 VDS = -5V ID = -3.6A f = 1 MHz VGS = 0 V -10V CISS 8 -15V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 2 300 200 COSS 100 CRSS 0 0 0 1 2 3 4 5 6 7 0 6 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 24 20 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 10s 10 100s 1ms 10ms 100ms 1s 1 VGS = -10V SINGLE PULSE RJA =270oC/W 0.1 DC TA = 25oC 0.1 1 30 10 SINGLE PULSE RJA = 270C/W TA = 25C 15 10 5 0 0.001 0.01 100 0.01 0.1 1 -VDS, DRAIN-SOURCE VOLTAGE (V) 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 18 Figure 8. Capacitance Characteristics. 100 -ID, DRAIN CURRENT (A) 12 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RJA(t) = r(t) + RJA RJA = 270 C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDN360P Rev F1 (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogica TruTranslation UHC UltraFETa VCX DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I2