Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
BIPOLAR ANALOG INTEGRATED CIRCUIT
µ
µµ
µ
PC2709T
5 V, MINIMOLD SILICON MMIC
MEDIUM OUTPUT POWER AMPLIFIER
©
1994, 2000
Document No. P12426EJ3V1DS00 (3rd edition)
Date Published May 2000 N CP(K)
Printed in Japan
DATA SHEET
DESCRIPTION
The
µ
PC2709T is a silicon monolithic integrated circuit designed as 1st IF amplifier for DBS tuners. This IC is
packaged in minimold package.
This IC is manufactured using NEC’s 20 GHz fT NESAT™III silicon bipolar process. This process uses silicon
nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and
prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• Supply voltage : VCC = 4.5 to 5.5 V
• Wideband response : fu = 2.3 GHz TYP. @3 dB bandwidth
• Medium output power : PO (sat) = +11.5 dBm@f = 1 GHz with external inductor
• Power gain : GP = 23 dB TYP. @f = 1 GHz
• Port impedance : input/output 50 Ω
APPLICATIONS
• 1st IF amplifiers in DBS converters
• RF stage buffer in DBS tuners, etc.
ORDERING INFORMATION
Part Number Package Marking Supplyi ng Form
µ
PC2709T-E3 6-pin minim ol d C1E Embossed tape 8 mm wi de.
1, 2, 3 pins face the perforation s i de of the tape.
Qty 3 kpcs/reel.
Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample
order:
µ
PC2709T)
Data Sheet P12426EJ3V1DS00
2
µ
µµ
µ
PC2709T
PIN CONNECTIONS
PRODUCT LINE-UP OF
µ
µµ
µ
PC2709 (TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω
ΩΩ
Ω)
Part No. fu
(GHz) PO (sat)
(dBm) GP
(dB) NF
(dB) ICC
(mA) Package Marking
µ
PC2709T 6-pin mini m ol d
µ
PC2709TB 6-pin super mi ni m ol d
Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
Caution The package size distinguishes between minimold and super minimold.
C1E25523+11.52.3
3
2
1
4
5
6
(Top View)
C1E
4
5
6
3
2
1
(Bottom View)
Pin No. Pin Name
1 INPUT
2GND
3GND
4OUTPUT
5GND
6V
CC
Data Sheet P12426EJ3V1DS00 3
µ
µµ
µ
PC2709T
SYSTEM APPLICATION EXAMPLE
EXAMPLE OF DBS CONVERTERS
BS Antenna (DBS ODU)
RF Amp. Mixer IF Amp.
Oscillator
PC2709T/TB
Parabola
Antenna
To IDU
µ
PC2711T/TB
µ
PC2712T/TB
µ
EXAMPLE OF 900 MHz BAND, 1.5 GHz BAND DIGITAL CELLULAR TELEPHONE
PC2709T/TB
µ
DEMO
PLL
φ
PA
SW
I
Q
Driver 0˚
90˚
Q
I
RX
TX
PLL
To know the associated products, please refer to each latest data sheet.
Data Sheet P12426EJ3V1DS00
4
µ
µµ
µ
PC2709T
PIN EXPLANATION
Pin
No. Pin
Name
Applied
Voltage
(V)
Pin
Voltage
(V)Note
Function and A ppl i cations Internal E qui valent Circuit
1 INPUT −1.05 Signal input pi n. A int ernal
matchi ng circuit, configured wit h
resistors, enabl es 50 Ω connec-
tion over a wi de band.
A mult i -f eedback ci rcuit i s de-
signed to cancel t he deviations of
hFE and resistance.
This pin must be coupl ed to sig-
nal source wi th capac i tor for DC
cut.
4 OUTPUT Voltage
as same
as VCC
through
external
inductor
−Signal output pin. The i nduc tor
must be attached between VCC
and output pins to supply current
to the int ernal output transist ors.
6V
CC 4.5 to 5.5 −Power s uppl y pin, whi c h bi ases
the internal i nput transis tor.
This pin s houl d be externally
equipped with by pass capacitor
to minim i ze its i mpedance.
2
3
5
GND 0 −Ground pin. This pi n should be
connect ed t o system ground with
minimum i nductance. Ground
pattern on the board should be
formed as wi de as possi bl e.
All the ground pi ns must be con-
nected together with wi de ground
pattern to decrease im pedance
difference.
Note Pin voltage is measured at VCC = 5.0 V
6
4
1
IN
V
CC
OUT
GNDGND 23 5
Data Sheet P12426EJ3V1DS00 5
µ
µµ
µ
PC2709T
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Ratings Unit Conditions
Supply V ol tage VCC 6VT
A = +25°C, Pi n 4 and 6
Total Circ ui t Current ICC 60 mA TA = +25°C
Power Dissipati on PD280 mW Mounted on double copper c l ad 50 × 50 × 1. 6 mm
epoxy glass PWB (T A = +85°C)
Operating Am bi ent Tem perature TA−40 to +85 °C
Storage Temperat ure Tstg −55 to +150 °C
Input Power Pin +10 dBm TA = +25°C
RECOMMENDED OPERATING CONDITIONS
Parameter Symbol MIN. TYP. MAX. Unit Notice
Supply V ol tage VCC 4.5 5.0 5.5 V The same vol tage should be appli ed to pin
4 and 6.
Operating Am bi ent Tem perature TA−40 +25 +85 °C
ELECTRICAL CHARACTERISTICS (TA = +25°C, VCC = Vout = 5.0 V, ZS = ZL = 50 Ω
ΩΩ
Ω)
Parameter Symbol Test Condit i ons MIN. TYP. MAX. Unit
Circuit Current ICC No Signal 19 25 32 mA
Power Gain GPf = 1 GHz 21.0 23.0 26.5 dB
Maximum Output Level PO (sat) f = 1 GHz, Pin = 0 dBm +9.0 +11.5 −dBm
Noise Figure NF f = 1 GHz −5.0 6.5 dB
Upper Limit Operating Frequency fu3 dB down below flat gain at f = 0.1 GHz 2. 0 2.3 −GHz
Isolat i on ISL f = 1 GHz 26 31 −dB
Input Return Loss RLin f = 1 GHz 7 10 −dB
Output Return Loss RLout f = 1 GHz 7 10 −dB
Gain Flatness ∆GPf = 0.1 to 1.8 GHz −±
1.0 −dB
Data Sheet P12426EJ3V1DS00
6
µ
µµ
µ
PC2709T
TEST CIRCUIT
V
CC
1 000 pF
1 000 pF 1 000 pF
C
1
C
2
L
4
6
1
2, 3, 5
50 Ω50 ΩOUTIN
C
3
COMPONENTS OF TEST CIRCUIT FOR
MEASURING ELECTRICAL CHARACTERISTICS EXAMPLE OF ACTURAL APPLICATION COMPONENTS
Type Value Type Value Operating Frequenc y
C3Capacitor 1 000 pF C1 to C3 Chip Capacitor 1 000 pF 100 MHz or higher
L Bias Tee 1 000 nH L Chip Induct or 300 nH 10 M Hz or hi gher
C1 to C2Bias Tee 1 000 pF 100 nH 100 MHz or hi gher
10 nH 1.0 GHz or higher
INDUCTOR FOR THE OUTPUT PIN
The internal output transistor of this IC consumes 20 mA, to output medium power. To supply current for output
transistor, connect an inductor between the VCC pin (pin 6) and output pin (pin 4). Select large value inductance, as
listed above.
The inductor has both DC and AC effects. In terms of DC, the inductor biases the output transistor with minimum
voltage drop to output enable high level. In terms of AC, the inductor make output-port impedance higher to get
enough gain. In this case, large inductance and Q is suitable.
CAPACITORS FOR THE VCC, INPUT AND OUTPUT PINS
Capacitors of 1 000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors
for the input and output pins.
The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias
can be supplied against VCC fluctuation.
The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial
impedance. Their capacitance are therefore selected as lower impedance against a 50 Ω load. The capacitors thus
perform as high pass filters, suppressing low frequencies to DC.
To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under
10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are
determined by equation, C = 1/(2 πRfc).
Data Sheet P12426EJ3V1DS00 7
µ
µµ
µ
PC2709T
ILLUSTRATION OF APPLICATION CIRCUIT ASSEMBLED ON EVALUATION BOARD
IN
C1E
OUT
C C
CV
CC
L
123
654
Top View
Mounting Direction
→
For more information on the use of this IC, refer to the following application note: USAGE AND APPLICATION OF
SILICON MEDIUM-POWER HIGH-FREQUENCY AMPLIFIER MMIC (P12152E).
COMPONENT LIST
Value
C 1 000 pF
L 300 nH
Notes
1. 30 × 30 × 0.4 mm double sided copper clad polyimide board.
2. Back side: GND pattern
3. Solder plated on pattern
4. : Through holes
Data Sheet P12426EJ3V1DS00
8
µ
µµ
µ
PC2709T
TYPICAL CHARACTERISTICS (TA = +25°C unless otherwise specified)
40
30
20
10
0 123456
I
CC
– Circuit Current – mA
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
V
CC
– Supply Voltage – V
35
25
15
5
40
30
20
10
00–60 +20 +100
I
CC
– Circuit Current – mA
CIRCUIT CURRENT vs. OPERATING
AMBIENT TEMPERATURE
T
A
– Operating Ambient Temperature – °C
35
25
15
5
–40 –20 +40 +60 +80
V
CC
= 5.0 V
NOISE FIGURE AND INSERTION POWER
GAIN vs. FREQUENCY
30
25
15
0.3 1.0 3.0
G
P
– Insertion Power Gain – dB
f – Frequency – GHz
10
0.1
8
7
6
5
NF – Noise Figure – dB
20
4
V
CC
= 5.5 V
NF
V
CC
= 4.5 V
V
CC
= 5.0 V
V
CC
= 5.5 V
G
P
30
25
15
0.3 1.0 3.0
G
P
– Insertion Power Gain – dB
f – Frequency – GHz
10
0.1
20
V
CC
= 5.0 V
0
–20
–30
–40
0.1 0.3 1.0
ISL – Isolation – dB
f – Frequency – GHz
–50
V
CC
= 5.0 V
–10
ISOLATION vs. FREQUENCY
3.0
INPUT RETURN LOSS, OUTPUT
RETURN LOSS vs. FREQUENCY
0
–10
–20
1.00.3 3.0
RL
in
– Input Return Loss – dB
RL
out
– Output Return Loss – dB
f – Frequency – GHz
–50
0.1
–30
–40
V
CC
= 5.0 V
RL
in
RL
out
INSERTION POWER GAIN vs. FREQUENCY
T
A
= +25°C
V
CC
= 5.0 V
V
CC
= 4.5 V
T
A
= –40°C
T
A
= +85°C
Data Sheet P12426EJ3V1DS00 9
µ
µµ
µ
PC2709T
OUTPUT POWER vs. INPUT POWER
+15
+10
0
–5
–35 0 +10
P
O
– Output Power – dBm
P
in
– Input Power – dBm
–15
–15 –10 –5
+5
–10
–20 –20–25–30 +5
f = 1.0 GHz
V
CC
= 4.5 V
V
CC
= 5.5 V
V
CC
= 5.0 V
OUTPUT POWER vs. INPUT POWER
+15
+10
0
–5
–35 0 +10
P
O
– Output Power – dBm
P
in
– Input Power – dBm
–15
–15 –10 –5
+5
–10
–20 –20–25–30 +5
T
A
= +85°C
T
A
= –40°C
V
CC
= 5.0 V
f = 1.0 GHz
OUTPUT POWER vs. INPUT POWER
+15
+10
0
–5
–35 0 +10
P
O
– Output Power – dBm
P
in
– Input Power – dBm
–15
–15 –10 –5
+5
–10
–20 –20–25–30 +5
OUTPUT POWER vs. INPUT POWER
+15
+10
0
–5
–35 0 +10
P
O
– Output Power – dBm
P
in
– Input Power – dBm
–15
–15 –10 –5
+5
–10
–20 –20–25–30 +5
V
CC
= 4.5 V
V
CC
= 5.5 V
V
CC
= 5.0 V f = 1.0 GHz
f = 2.0 GHz
f = 0.5 GHz
V
CC
= 5.0 V
SATURATED OUTPUT POWER vs.
FREQUENCY
+20
+14
+8
0.3 1 3
P
O(sat)
– Saturated Output Power – dBm
f – Frequency – GHz
0
0.1
P
in
= 0 dB
+18
+16
+12
+10
+6
+4
+2
V
CC
= 5.0 V
V
CC
= 5.5 V
V
CC
= 4.5 V
–60
–50
–40
–30
–10 +10
IM
3
– 3rd Order Intermodulation Distortion – dBc
P
O(each)
– Output Power of Each Tone – dBm
–20
0
–10
THIRD ORDER INTERMODULATION DISTORTION
vs. OUTPUT POWER OF EACH TONE
+8–8 +6+4+2–6 –4 –2
f
1
= 1 .000 GHz
f
2
= 1 .002 GHz
V
CC
= 4.5 V
V
CC
= 5.0 V
V
CC
= 5.5 V
f = 2.0 GHz
T
A
= +25°C
Data Sheet P12426EJ3V1DS00
10
µ
µµ
µ
PC2709T
S-PARAMETER (VCC = Vout = 5.0 V)
S11-FREQUENCY
20
30
40
50
0060
70
80
90
100
110
120
130
140
150
0.28
0.22
0.30
0.20
0.32
0.18
0.34
0.16
0.36
0.14
0.38
0.12
0.40
0.10
0.42
0.08
0.44
0.06
0.46
0.04
0.21
0.19
0.17
0.15
0.13
0.11
0.09
0.07
0.05
0.03
0.29
0.31
0.33
0.35
0.37
0.39
0.41
0.43
0.45
0.47
50
0.2
0.1
0.3
NE
G
AT
IVE
R
E
AC
TA
N
CE
C
OM
PO
NE
NT
0.4
0.5
0.6
0.7
0.8
2.0
10
6.0
4.0
3.0
1.8
1.6
1.4
(
+JX
––––
Z
O
)
0.2
0.4
0.6
0.8
(
R
––––
Z
O
1.0
0.2
0.4
0.8
0.6
1.0
20
REACTANCE COMPONENT
A
N
G
L
E
O
F
R
E
F
L
E
C
T
I
O
N
C
O
E
F
F
C
I
E
N
T
I
N
D
E
G
R
E
E
S
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
T
O
R
P
OS
ITIVE
R
EA
C
TA
NC
E
CO
M
P
ON
EN
T
1.0 G
3.0 G
0.1 G
S22-FREQUENCY
20
30
40
50
0060
70
80
90
100
110
120
130
140
150
0.28
0.22
0.30
0.20
0.32
0.18
0.34
0.16
0.36
0.14
0.38
0.12
0.40
0.10
0.42
0.08
0.44
0.06
0.46
0.04
0.21
0.19
0.17
0.15
0.13
0.11
0.09
0.07
0.05
0.03
0.29
0.31
0.33
0.35
0.37
0.39
0.41
0.43
0.45
0.47
50
0.2
0.1
0.3
NE
G
AT
IVE
R
E
AC
TA
N
CE
C
OM
PO
NE
NT
0.4
0.5
0.6
0.7
0.8
2.0
10
6.0
4.0
3.0
1.8
1.6
1.4
(
+JX
––––
Z
O
)
0.2
0.4
0.6
0.8
(
R
––––
Z
O
1.0
0.2
0.4
0.8
0.6
1.0
20
REACTANCE COMPONENT
A
N
G
L
E
O
F
R
E
F
L
E
C
T
I
O
N
C
O
E
F
F
C
I
E
N
T
I
N
D
E
G
R
E
E
S
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
T
O
R
P
OS
ITIVE
R
EA
C
TA
NC
E
CO
M
P
ON
EN
T
1.0 G
3.0 G
2.0 G
0.1 G
Data Sheet P12426EJ3V1DS00 11
µ
µµ
µ
PC2709T
TYPICAL S-PARAMETER VALUES (TA = +25°C)
µ
PC2709T
VCC = Vout = 5.0 V, ICC = 30 mA
Frequency S11 S21 S12 S22 K
MHz MAG ANG MAG ANG MAG ANG MAG ANG
100.0000 .258 –4.1 12.706 –3.7 .022 7.5 .234 –4.6 1.66
200.0000 .261 –2.9 12.793 –12.2 .024 3.1 .240 –6.9 1.52
400.0000 .271 –4.6 13.023 –27.0 .025 6.5 .260 –13.5 1.32
600.0000 .275 –8.1 13.305 –41.3 .026 10.5 .288 –22.1 1.29
800.0000 .278 –12.7 13.595 –57.4 .026 11.0 .312 –33.5 1.27
1000.0000 .279 –15.2 13.816 –72.3 .027 15.6 .324 –43.4 1.20
1200.0000 .276 –20.7 13.992 –90.3 .027 17.7 .332 –59.0 1.19
1400.0000 .263 –25.6 13.750 –109.3 .027 19.2 .326 –75.1 1.22
1600.0000 .246 –28.6 13.195 –128.3 .028 20.6 .302 –90.6 1.27
1800.0000 .237 –31.7 12.254 –147.5 .030 27.9 .254 –106.8 1.33
2000.0000 .222 –33.6 10.976 –166.1 .031 33.2 .198 –120.8 1.47
2200.0000 .194 –33.1 9.664 177.5 .033 35.8 .143 –132.5 1.61
2400.0000 .176 –26.8 8.392 162.0 .034 38.5 .089 –144.4 1.81
2500.0000 .173 –23.2 7.771 154.8 .035 39.2 .065 –150.6 1.90
Data Sheet P12426EJ3V1DS00
12
µ
µµ
µ
PC2709T
PACKAGE DIMENSIONS
6 pin minimold (Unit: mm)
0.13±0.1
0.3
+0.1
–0.05
0.8
1.1
+0.2
–0.1
0 to 0.1
123
654
1.9
2.9±0.2
0.950.95
1.5
+0.2
–0.1
2.8
+0.2
–0.3
Data Sheet P12426EJ3V1DS00 13
µ
µµ
µ
PC2709T
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground pins must be connected together with wide ground pattern to decrease impedance difference.
(3) The bypass capacitor should be attached to VCC line.
(4) The inductor must be attached between VCC and output pins. The inductance value should be determined in
accordance with desired frequency.
(5) The DC cut capacitor must be attached to input pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions. For soldering methods and condi-
tions other than those recommended below, contact your NEC sales representative.
Soldering Method Soldering Condit i ons Recommended Condition Sy m bol
Infrared Refl ow Pac kage peak tem perature: 235°C or below
Time: 30 s econds or les s (at 210°C)
Count: 3, Exposure l i m i tNote: None
IR35-00-3
VPS Package peak temperature: 215°C or below
Time: 40 s econds or les s (at 200°C)
Count: 3, Exposure l i m i tNote: None
VP15-00-3
Wave Solderi ng Soldering bath temperature: 260°C or bel ow
Time: 10 seconds or less
Count: 1, Exposure l i m i tNote: None
WS60-00-1
Partial Heating Pin tem perat ure: 300°C
Time: 3 s econds or les s (per side of device)
Exposure l i mitNote: None
Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period.
Caution Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
Data Sheet P12426EJ3V1DS00
14
µ
µµ
µ
PC2709T
[MEMO]
Data Sheet P12426EJ3V1DS00 15
µ
µµ
µ
PC2709T
[MEMO]
µ
µµ
µ
PC2709T
ATTENTION
OBSERVE PRECAUTIONS
FOR HANDLING
ELECTROSTATIC
SENSITIVE
DEVICES
NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8
