1. Product profile
1.1 General description
Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead
SOT502A flange packag e with a ceramic cap. The common source is connected to the
mounting flange.
1.2 Features and benefits
High power gain
Easy power control
Excellent ruggedness
Source on mounting base eliminates DC isolators, reducing common mode
inductance.
1.3 Applications
Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such
as Mode-S, TCAS and JTIDS, DME or TACAN.
BLA0912-250R
Avionics LDMOS power transistor
Rev. 3 — 1 December 2010 Product data sheet
Table 1. Test information
Typical RF performance measured in common source class-AB test circuit at PL= 250 W and 960 MHz to 1215 MHz
frequency band. Th = 25
°
C; Zth(j-h) = 0.15 K/W; unless otherwise specified.
Mode of operation f tpδVDS PLGpΔGpηDPdroop(pulse) trtfZth(j-h) ϕins(rel)
(MHz) (μs) % (V) (W) (dB) (dB) (%) (dB) (ns) (ns) (K/W) (deg)
all modes 960 to 1215 100 10 36 250 13.5 0.8 50 0.1 25 6 0.18 ±5
TCAS 1030 to 1090 32 0.1 36 250 14.0 0.8 50 0 25 6 0.07 ±5
Mode-S 1030 to 1090 128 2 36 250 13.5 0.8 50 0.1 25 6 0.15 ±5
1030 to 1090 340 1 36 250 13.5 0.8 50 0.2 25 6 0.20 ±5
JTIDS 960 to 1215 3300 22 36 200 13.0 1.2 45 0.2 25 6 0.45 ±5
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
BLA0912-250R All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 1 December 2010 2 of 13
NXP Semiconductors BLA0912-250R
Avionics LDMOS power transistor
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
5. Thermal characteristics
[1] Thermal resistance is determined under RF operating conditions; tp = 100 μs, δ = 10 %.
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1drain
2gate
3source [1] 3
2
11
3
2
sym03
9
Table 3. Ordering information
Type number Package
Name Description Version
BLA0912-250R - flanged LDMOST ceramic package;
2 mounting holes; 2 leads SOT502A
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-sourc e vol tage - 75 V
VGS gate-source voltage - ±22 V
Ptot total power dissipation Th25 °C; tp=50μs; δ=2% - 700 W
Tstg storage temperature 65 +150 °C
Tjjunction temperature - 200 °C
Table 5. Thermal characteris tics
Symbol Parameter Conditions Typ Unit
Zth(j-h) transient thermal impedance from junction to
heatsink Th = 25 °C[1] 0.18 K/W
BLA0912-250R All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 1 December 2010 3 of 13
NXP Semiconductors BLA0912-250R
Avionics LDMOS power transistor
6. Characteristics
6.1 Ruggedness in class-AB operation
The BLA0912-250R is capable of withstanding a load mismatch corresponding to
VSWR = 5 : 1 through all phases under the following conditions: VDS =36V;
f = 960 MHz to 1215 MHz at rated load power.
Table 6. DC characteristics
Tj = 25
°
C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS =0V; I
D=3mA 75 - - V
VGS(th) gate-source threshold voltage VDS = 10 V; ID=300mA 4 - 5 V
IDSS drain leakage current VGS =0V; V
DS =36V--1μA
IDSX drain cut-off current VGS =V
GSth +9 V;
VDS =10V 45 - - A
IGSS gate leakage current VGS =20V; V
DS =0V--1μA
gfs forward transconductance VDS =10V; I
D=10A - 9 - S
RDS(on) drain-source on-state resistance VGS =9V; I
D=10A - 60 - mΩ
Table 7. RF characteristics
RF performance in common source class-AB circuit; Th = 25
°
C; Zth = 0.15 K/W; unless ot he rw i s e
specified.
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source volt age - - 36 V
f frequency 960 - 1215 MHz
PLoutput po w er tp=100μs; δ= 10 % 250 - W
Gppower gain PL= 250 W 12 13 dB
ηDdrain efficiency tp=100μs; δ= 10 % 40 50 %
Zth(j-h) transient thermal impedance
from junction to heatsink tp=100μs; δ=10%--0.2K/W
Thheatsink temperature 55 - +70 °C
Pdroop(pulse) pulse droop power tp=100μs; δ=10% - 0.1 0.5 dB
αresp(sp) spurious response VSWRload =2:1 - - 60 dBc
trrise time - 25 50 ns
tffall time - 6 25 ns
BLA0912-250R All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 1 December 2010 4 of 13
NXP Semiconductors BLA0912-250R
Avionics LDMOS power transistor
7. Application information
7.1 Impedance information
7.2 Application circuit
Table 8. Typical impedance
Typical values per section unless otherwise specified.
f ZSZL
MHz Ω Ω
960 0.89 j1.70 1.53 j1.13
1030 1.37 j1.23 1.47 j0.99
1090 2.09 j1.27 1.38 j0.85
1140 2.40 j1.97 1.30 j0.71
1215 1.51 j2.61 1.17 j0.47
Fig 1. Definition of transistor impedance
001aaf05
9
drain
ZL
ZS
gate
See Table 9 for details of striplines.
Fig 2. Layout of class-AB application circuit
001aab08
5
C4C3C2
L5 L6L4C1 L3
L2
L1 L8L7
C5
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Product data sheet Rev. 3 — 1 December 2010 5 of 13
NXP Semiconductors BLA0912-250R
Avionics LDMOS power transistor
Table 9. Layout details
See Figure 2.
Striplines are on a Rodgers Duroid 6010 Printed-Circuit Board (PCB);
ε
r = 10.2 F/m;
thickness = 0.64 mm
Component Description Dimensions
Input circuit
L1 stripline 5 mm × 0.8 mm
C1 stripline 1.2 mm × 3.5 mm
L2 stripline capacitor pad: 1 mm × 1 mm (1×)
curve: width 0.8 mm; angle 90°; radius 0.8 mm (10×)
vertical: 3.9 mm × 0.8 mm (2×)
vertical: 9.4 mm × 0.8 mm (3×)
horizontal: 0.5 mm × 0.8 mm (4×)
L3 stripline 3 mm × 2 mm
C2 stripline 4 mm × 6.5 mm
L4 stripline 5 mm × 1 mm
C3 stripline 8.8 mm × 30 mm + 0.2 mm × 13 mm
Output circuit
C4 stripline 0.2 mm × 13 mm + 19 mm × 17.1 mm
L5 stripline 2.5 mm × 2.3 mm
L6 stripline 4 mm × 1 mm
C5 stripline 3 mm × 6.6 mm
L7 stripline curve: width 0.8 mm; angle 90°; radius 0.8 mm (6×)
vertical: 2.2 mm × 0.8 mm (2×)
vertical: 6 mm × 0.8 mm (1×)
horizontal: 1 mm × 0.8 mm (2×)
L8 stripline 2.5 mm × 0.8 mm
1/4 λ line stripline curve: width 1 mm; angle 90°; radius 0.8 mm
vertical: 5 mm × 1 mm
horizontal: 19 mm × 1 mm
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Product data sheet Rev. 3 — 1 December 2010 6 of 13
NXP Semiconductors BLA0912-250R
Avionics LDMOS power transistor
[1] American Technical Ceramics type 100B or capacitor of same quality.
[2] American Technical Ceramics type 100A or capacitor of same quality.
Dimensions in mm.
See Table 10 for list of components.
Fig 3. Component layout for class-AB application circuit
Table 10. List of components
See Figure 3.
Component Description Value Remarks
C1, C3, C9 multilayer ceramic chip capacitor 1 nF [1]
C2, C6, C10 multilayer ceramic chip capacitor 22 pF [2]
C4 tantalum SMD capacitor 47 μF; 20 V KEMET: T491D476M020AS
C5 multilayer ceramic chip capacitor 56 pF [2]
C7 multilayer ceramic chip capacitor 47 pF [2]
C8 tantalum SMD capacitor 22 μF; 63 V
R1 SMD resistor 51 Ω0805
R2 resistor 49.9 Ω
001aab08
3
C1 C2
C6 C7
C3
R1
R2
C4 C5
C8 C10C9
40 40
60
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Product data sheet Rev. 3 — 1 December 2010 7 of 13
NXP Semiconductors BLA0912-250R
Avionics LDMOS power transistor
8. Test information
8.1 RF performance
Typical RF performance measured in common source class-AB test circuit at PL= 250 W
and 960 MHz to 1215 MHz frequency band. Th = 25 °C; Zth(j-h) = 0.15 K/W; unless
otherwise specified.
Th = 25 °C; VDS = 36 V; IDq = 150 mA; class-AB;
tp= 100 μs; δ=10%. Th=25°C; VDS =36V; I
Dq = 150 mA; class-AB;
tp= 100 μs; δ=10%.
(1) f = 960 MHz
(2) f = 1030 MHz
(3) f = 1090 MHz
(4) f = 1140 MHz
(5) f = 1215 MHz
Fig 4. Power gain and drain efficiency as function of
frequency; typical values Fig 5. Power gain as a function of load power;
typical values
001aab078
f (MHz)
940 124011401040990 11901090
9
11
7
13
15
Gp
(dB)
5
25
35
15
45
55
ηD
(%)
5
Gp
ηD
001aab079
PL(W)
0 300200100
10
6
14
18
Gp
(dB)
2
4
8
12
16
(1) (4) (3)
(2)
(5)
BLA0912-250R All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 1 December 2010 8 of 13
NXP Semiconductors BLA0912-250R
Avionics LDMOS power transistor
Th=25°C; VDS =36V; I
Dq = 150 mA; class-AB;
tp= 100 μs; δ=10%.
(1) f = 960 MHz
(2) f = 1030 MHz
(3) f = 1090 MHz
(4) f = 1140 MHz
(5) f = 1215 MHz
Th=25°C; VDS =36V; I
Dq = 150 mA; class-AB;
tp= 100 μs; δ=10%.
(1) f = 960 MHz
(2) f = 1030 MHz
(3) f = 1090 MHz
(4) f = 1140 MHz
(5) f = 1215 MHz
Fig 6. Load power as a function of input power;
typical valu e s Fig 7. Efficiency as a function of load power;
typical values
Pi (W)
0 6 10 142161248
001aab080
100
200
300
PL
(W)
0
(5)
(2)
(1)
(3)
(4)
50
150
250
001aab081
PL (W)
0 30020010050 150 250
20
40
60
0
50
30
10
ηD
(%)
(5)
(1)
(3)
(2) (4)
BLA0912-250R All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 1 December 2010 9 of 13
NXP Semiconductors BLA0912-250R
Avionics LDMOS power transistor
9. Package outline
Fig 8. Package outline SOT502A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT502A 99-12-28
03-01-10
0 5 10 mm
scale
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502
A
p
L
A
F
b
D
U2
H
Q
c
1
3
2
D1
E
A
C
q
U1
C
B
E1
M M
w2
UNIT A
mm
Db
12.83
12.57
0.15
0.08
20.02
19.61
9.53
9.25
19.94
18.92
9.91
9.65
4.72
3.43
cU2
0.25 0.5127.94
qw
2
w1
F
1.14
0.89
U1
34.16
33.91
L
5.33
4.32
p
3.38
3.12
Q
1.70
1.45
EE
1
9.50
9.30
inches 0.505
0.495
0.006
0.003
0.788
0.772
D1
19.96
19.66
0.786
0.774
0.375
0.364
0.785
0.745
0.390
0.380
0.186
0.135 0.01 0.021.100
0.045
0.035
1.345
1.335
0.210
0.170
0.133
0.123
0.067
0.057
0.374
0.366
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
w1AB
M M M
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Product data sheet Rev. 3 — 1 December 2010 10 of 13
NXP Semiconductors BLA0912-250R
Avionics LDMOS power transistor
10. Abbreviations
11. Revision history
Table 11. Abbreviations
Acronym Description
DC Direct Current
DME Distance Measuring Equipment
JTIDS Joint Tactical Information Distribution System
LDMOS Laterally Diffused Metal-Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor T ransistor
Mode-S Mode Select
RF Radio Frequency
SMD Surface Mounted Device
TACAN TACtical Air Navigation
TCAS Traffic Collision Avoidance System
VSWR Voltage Standing-Wave Ratio
Table 12. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLA0912-250R v.3 20101201 Product data sheet - BLA0912-250R v.2
Modifications: Table 10 on page 6: The remark of component C8 has been removed.
Table 10 on page 6: The value of component C8 has been specified in more detail.
BLA0912-250R v.2 20101015 Product data sheet - BLA0912-250R v.1
BLA0912-250R v.1 20100303 Product data sheet - -
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Product data sheet Rev. 3 — 1 December 2010 11 of 13
NXP Semiconductors BLA0912-250R
Avionics LDMOS power transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full informatio n see the relevant full data
sheet, which is available on request via the local NXP Semicond uctors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre va il.
Product specificat io nThe information and data provided in a Product
data sheet shall define the specification of the product as agreed between
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contain s data from the objective specification for product develop ment.
Preliminary [short] dat a sheet Qualification This document contains dat a from the preliminary specification.
Product [short] data sheet Production This document contains the product specificatio n.
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Product data sheet Rev. 3 — 1 December 2010 12 of 13
NXP Semiconductors BLA0912-250R
Avionics LDMOS power transistor
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In the event that customer uses the product for design-in and use in
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Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BLA0912-250R
Avionics LDMOS power transistor
© NXP B.V. 2010. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 1 December 2010
Document identifier: BLA0912-250R
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 2
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6.1 Ruggedness in class-AB operation . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 4
7.1 Impedance information. . . . . . . . . . . . . . . . . . . 4
7.2 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 4
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
8.1 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13 Contact information. . . . . . . . . . . . . . . . . . . . . 12
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13