Philips Semiconductors Linear Products Product specification Dual operational transconductance amplifier DESCRIPTION NE5517/5517A PIN CONFIGURATION The NE5517 contains two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The NE5517 offers significant design and performance advantages over similar devices for all types of programmable gain applications. Circuit performance is enhanced through the use of linearizing diodes at the inputs which enable a 10dB signal-to-noise improvement referenced to 0.5% THD. The NE5517 is suited for a wide variety of industrial and consumer applications and is recommended as the preferred circuit in the Dolby* HX (Headroom Extension) system. N, D Packages IABCa 1 16 IABCb Da 2 15 Db 3 14 +INb -INa 4 13 -INb VOa 5 12 VOb V- 6 11 V+ 7 10 INBUFFERb VOBUFFERa 8 9 VOBUFFERb +INa INBUFFERa Constant impedance buffers on the chip allow general use of the NE5517. These buffers are made of Darlington transistor and a biasing network which changes bias current in dependence of IABC. Top View Therefore, changes of output offset voltages are almost eliminated. This is an advantage of the NE5517 compared to LM13600. With the LM13600, a burst in the bias current IABC guides to an audible offset voltage change at the output. With the constant impedance buffers of the NE5517 this effect can be avoided and makes this circuit preferable for high quality audio applications. APPLICATIONS * Multiplexers * Timers * Electronic music synthesizers * Dolby HX Systems * Current-controlled amplifiers, filters * Current-controlled oscillators, impedances FEATURES * Constant impedance buffers * VBE of buffer is constant with amplifier IBIAS change * Pin compatible with LM13600 * Excellent matching between amplifiers * Linearizing diodes * High output signal-to-noise ratio Dolby is a registered trademark of Dolby Laboratories Inc., San Francisco, Calif. PIN DESIGNATION PIN NO. SYMBOL 1 IABC 2 D 3 +IN Non-inverting input A 4 -IN Inverting input A 5 VO Output A 6 V- Negative supply 7 INBUFFER Buffer input A 8 VOBUFFER Buffer output A 9 VOBUFFER Buffer output B 10 INBUFFER Buffer input B 11 V+ Positive supply 12 VO Output B 13 -IN Inverting input B 14 +IN Non-inverting input B 15 D 16 IABC August 31, 1994 NAME AND FUNCTION Amplifier bias input A Diode bias A Diode bias B Amplifier bias input B 92 853-0887 13721 Philips Semiconductors Linear Products Product specification Dual operational transconductance amplifier NE5517/5517A CIRCUIT SCHEMATIC V+ 11 D4 D6 Q12 Q14 Q6 Q13 7,10 Q10 8,9 Q7 Q11 2,15 VOUTPUT D3 D2 Q4 -INPUT 4,13 Q5 5,12 +INPUT 3,14 Q15 1,16 AMP BIAS INPUT Q16 Q3 Q2 D7 Q9 R1 Q1 D8 Q8 D1 D5 V- 6 CONNECTION DIAGRAM B AMP BIAS INPUT B DIODE BIAS B INPUT (+) B INPUT (-) 16 15 14 13 B OUTPUT V+ (1) B BUFFER INPUT B BUFFER OUTPUT 12 11 10 9 5 6 7 8 - B + + A - 1 AMP BIAS INPUT A 2 DIODE BIAS A 3 4 INPUT (+) A INPUT (-) A OUTPUT A NOTE: 1. V+ of output buffers and amplifiers are internally connected. August 31, 1994 93 V- BUFFER INPUT A BUFFER OUTPUT A Philips Semiconductors Linear Products Product specification Dual operational transconductance amplifier NE5517/5517A ORDERING INFORMATION DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG # 16-Pin Plastic Dual In-Line Package (DIP) 0 to +70C NE5517N 0406C 16-Pin Plastic Dual In-Line Package (DIP) 0 to +70C NE5517AN 0406C 16-Pin Small Outline (SO) Package 0 to +70C NE5517D 0005D ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RATING UNIT NE5517 36 VDC or 18 V NE5517A 44 VDC or 22 V NE5517N, NE5517AN 1500 mW NE5517D 1125 mW Supply voltage1 VS PD Power dissipation, TA=25C (still air)2 VIN Differential input voltage 5 V ID Diode bias current 2 mA IABC Amplifier bias current 2 mA ISC Output short-circuit duration IOUT Buffer output current3 TA Operating temperature range VDC DC input voltage TSTG Storage temperature range TSOLD Lead soldering temperature (10sec max) Indefinite NE5517N, NE5517AN 20 mA 0C to +70 C +VS to -VS -65C to +150C C 300 C NOTES: 1. For selections to a supply voltage above 22V, contact factory 2. The following derating factors should be applied above 25C N package at 12.0mW/C D package at 9.0mW/C 3. Buffer output current should be limited so as to not exceed package dissipation. DC ELECTRICAL CHARACTERISTICS1 SYMBOL VOS PARAMETER Input offset voltage 0.4 5 7 VOS including diodes Diode bias current (ID)=500A 0.5 5A IABC 500A 0.1 IOS/T Input bias current IB/T Forward transconductance 0.1 Avg. TC of input offset current 0.001 Over temperature range 0.4 1 Avg. TC of input current Over temperature range August 31, 1994 5 Max 0.4 2 mV 5 mV 9600 0.5 0.6 5 8 94 350 300 5 500 2 mV 0.1 3 mV 0.1 0.6 0.4 1 7700 4000 9600 5 7 650 5 500 A A A/C 12000 mho mho 7 650 A A A 0.3 3 350 300 A A/C 0.01 13000 mV V/C 0.001 0.3 RL=0, IABC=5A RL=0, IABC=500A RL=0, 2 7 5 UNIT Typ 0.3 0.01 6700 5400 gM tracking Peak output current Min Over temperature range Avg. TC of input offset voltage Input offset current IOUT Max VOS/T Input offset change NE5517A Typ 0.3 IOS gM NE5517 Min IABC 5A VOS IBIAS TEST CONDITIONS dB Philips Semiconductors Linear Products Product specification Dual operational transconductance amplifier NE5517/5517A DC ELECTRICAL CHARACTERISTICS1 (continued) SYMBOL VOUT PARAMETER NE5517 Min Typ RL=, 5AIABC500A +12 +14.2 RL=, 5AIABC500A -12 -14.4 NE5517A Max Min Typ +12 +14.2 -12 -14.4 Max UNIT Peak output voltage Positive Negative ICC TEST CONDITIONS Supply current V V IABC=500A, both channels 2.6 4 2.6 4 mA Positive VOS/ V+ 20 150 20 150 V/V Negative VOS/ V- 20 150 20 150 V/V VOS sensitivity CMRR Common-mode rejection ration Common-mode range Crosstalk IIN Differential input current Leakage current RIN Input resistance BW Open-loop bandwidth SR Slew rate INBUFFER VO- 80 110 80 110 dB 12 13.5 12 13.5 V 100 dB Referred to input2 20Hz