FCPF190N65S3R0L Power MOSFET, N-Channel, SUPERFET) III, Easy Drive, 650 V, 17 A, 190 mW Description SUPERFET III MOSFET is ON Semiconductor's brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. www.onsemi.com VDSS RDS(on) MAX ID MAX 650 V 190 m @ 10 V 17 A D Features * * * * * * 700 V @ TJ = 150C Typ. RDS(on) = 159 mW Ultra Low Gate Charge (Typ. Qg = 33 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 300 pF) 100% Avalanche Tested This Device is Pb-Free and is RoHS Compliant Applications * * * * G S G D S Computing / Display Power Supplies Telecom / Server Power Supplies Industrial Power Supplies Lighting / Charger / Adapter TO-220 CASE 340BF MARKING DIAGRAM $Y&Z&3&K FCPF190 N65S3R0 $Y &Z &3 &K FCPF190N65S3R0 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2017 January, 2019 - Rev. 5 1 Publication Order Number: FCPF190N65S3R0L/D FCPF190N65S3R0L ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage Drain Current ID IDM Drain Current EAS Value Unit 650 V DC 30 V AC (f > 1 Hz) 30 V Continuous (TC = 25C) 17* A Continuous (TC = 100C) 11* 42.5* A Single Pulsed Avalanche Energy (Note 2) 76 mJ IAS Avalanche Current (Note 2) 2.5 A EAR Repetitive Avalanche Energy (Note 1) 1.44 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 Power Dissipation 33 W 1.15 W/C -55 to +150 C 300 C PD Pulsed (Note 1) TC = 25C Derate Above 25C TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds TL Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Drain current limited by maximum junction temperature. 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 2.5 A, RG = 25 W, starting TJ = 25C. 3. ISD 8.5 A, di/dt 200 A/ms, VDD 400 V, starting TJ = 25C. THERMAL CHARACTERISTICS Symbol Parameter Value RJC Thermal Resistance, Junction to Case, Max. 3.76 RJA Thermal Resistance, Junction to Ambient, Max. 62.5 Unit _C/W PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FCPF190N65S3R0L FCPF190N65S3R0 TO-220F Tube N/A N/A 50 Units www.onsemi.com 2 FCPF190N65S3R0L ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit VGS = 0 V, ID = 1 mA, TJ = 25C 650 V VGS = 0 V, ID = 1 mA, TJ = 150C 700 V OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS / DTJ Breakdown Voltage Temperature Coefficient IDSS ID = 1 mA, Referenced to Zero Gate Voltage Drain Current 25oC 0.6 VDS = 650 V, VGS = 0 V VDS = 520 V, TC = 125oC IGSS Gate to Body Leakage Current V/C 1 mA 100 nA 4.5 V 190 mW 0.89 VGS = 30 V, VDS = 0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 8.5 A 159 Forward Transconductance VDS = 20 V, ID = 8.5 A 10 S VDS = 400 V, VGS = 0 V, f = 1 MHz 1350 pF 30 pF gFS VGS = VDS, ID = 1.7 mA 2.5 DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 300 pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 43 pF VDS = 400 V, ID = 8.5 A, VGS = 10 V (Note 4) 33 nC 7.9 nC 14 nC f = 1 MHz 0.5 W VDD = 400 V, ID = 8.5 A, VGS = 10 V, Rg = 4.7 (Note 4) 17 ns 16 ns Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge ESR Equivalent Series Resistance SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time 42 ns Turn-Off Fall Time 6 ns tf SOURCE-DRAIN DIODE CHARACTERISTICS IS Maximum Continuous Source to Drain Diode Forward Current 17 A ISM Maximum Pulsed Source to Drain Diode Forward Current 42.5 A 1.2 V VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, ISD = 8.5 A VDD = 400 V, ISD = 8.5 A, dIF/dt = 100 A/ms 313 ns 4.9 mC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 FCPF190N65S3R0L TYPICAL PERFORMANCE CHARACTERISTICS 50 ID Drain Current [A] 10 ID Drain Current [A] 50 VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 1 Notes: 1. VDS = 20 V 2. 250 ms Pulse Test 10 150C 25C Notes: 1. 250 ms Pulse Test 2. TC = 25C -55C 0.1 1 0.1 10 3 7 8 Figure 2. Transfer Characteristics 100 IS, Reverse Drain Current [A] Note: TC = 25C 0.2 VGS = 20 V 0.1 0.0 9 Notes: 1. VGS = 0 V 2. 250 ms Pulse Test 10 150C 1 25C 0.1 -55C 0.01 0.001 0 10 20 30 40 0.0 ID, Drain Current [A] VGS, Gate-Source Voltage [V] 10 10000 Ciss 1000 Coss Notes: 1. VGS = 0 V 2. f = 1 MHz ciss = cgs + cgd (cds = shorted) coss = cds + cgd crss = cgd 0.1 0.1 1 10 1.0 1.5 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 100000 100 0.5 VSD, Body Diode Forward Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Capacitance [pF] 6 Figure 1. On-Region Characteristics VGS = 10 V 1 5 VGS, Gate-Source Voltage [V] 0.3 10 4 VDS, Drain-Source Voltage [V] 0.4 RDS(ON), Drain-Source On-Resistance [W] 1 Crss Note: ID = 8.5 A 8 VDS = 130 V VDS = 400 V 6 4 2 0 100 1000 0 5 10 15 20 25 30 35 VDS, Drain-Source Voltage [V] Qg, Total Gate Charge [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 4 FCPF190N65S3R0L TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 3.0 Notes: 1. VDS = 0 V 2. ID = 10 mA 1.1 RDS(ON), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.0 0.9 0.8 Notes: 1. VDS = 10 V 2. ID = 8.5 A 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 -50 TJ, Junction Temperature [5C] 0 50 100 150 TJ, Junction Temperature [5C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 20 100 100 ms 1 ms 10 1 Operation in This Area is Limited by RDS(on) ID, Drain Current [A] ID, Drain Current [A] 30 ms 10 ms DC Notes: 1. TC = 25C 2. TJ = 150C 3. Single Pulse 0.1 0.01 1 10 5 0 10 100 1000 25 50 75 100 125 150 VDS, Drain-Source Voltage TC, Case Temperature [5C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 8 6 EOSS [mJ] 15 4 2 0 0 130 260 390 520 650 VDS, Drain to Source Voltage Figure 11. Eoss vs. Drain to Source Voltage www.onsemi.com 5 FCPF190N65S3R0L TYPICAL PERFORMANCE CHARACTERISTICS (Continued) r(t), Normalized Effective Transient Thermal Resistance 2 DUTY CYCLE-DESCENDING ORDER 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM t1 t2 Notes: ZqJC(t) = r(t) x RqJC RqJC = 3.76C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 -5 10 -4 10 -3 10 -2 -1 10 10 10 0 t, Rectangular Pulse Duration (sec) Figure 12. Transient Thermal Response Curve www.onsemi.com 6 10 1 10 2 FCPF190N65S3R0L VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 13. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr tf td(off) ton toff Figure 14. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time FCPF190N65S3R0L + DUT VSD - ISD L Driver RG Same Type as DUT VGS - dv/dt controlled by RG - ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-220 FULLPAK 3LD CASE 340BF ISSUE O DATE 31 AUG 2016 10.30 9.80 A 2.90 2.50 3.40 3.00 6.60 6.20 3.00 2.60 1 X 45 B 19.00 17.70 B 15.70 15.00 3.30 B 2.70 3 1 2.14 2.70 2.30 1.20(2X) 0.90 10.70 10.30 1.20 1.00 2.74 (2X) 2.34 NOTES: 4.60 4.30 DOCUMENT NUMBER: STATUS: B 0.60 0.40 0.90 (3X) 0.50 0.50 M A A. EXCEPT WHERE NOTED CONFORMS TO EIAJ SC91A. B DOES NOT COMPLY EIAJ STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSION AND TOLERANCE AS PER ASME Y14.5-2009. 98AON13839G ON SEMICONDUCTOR STANDARD NEW STANDARD: (c) Semiconductor Components Industries, LLC, 2002 October, DESCRIPTION: 2002 - Rev. 0 http://onsemi.com TO-220 FULLPAK 3LD 1 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. Case Outline Number: PAGE 1 OFXXX 2 DOCUMENT7NUMBER: 98AON13839G PAGE 2 OF 2 ISSUE O REVISION RELEASED FOR PRODUCTION FROM FAIRCHILD TO220V03 TO ON SEMICONDUCTOR. REQ. BY B. NG. DATE 31 AUG 2016 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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